KR970008347A - Metal layer formation method of semiconductor device - Google Patents
Metal layer formation method of semiconductor device Download PDFInfo
- Publication number
- KR970008347A KR970008347A KR1019950019396A KR19950019396A KR970008347A KR 970008347 A KR970008347 A KR 970008347A KR 1019950019396 A KR1019950019396 A KR 1019950019396A KR 19950019396 A KR19950019396 A KR 19950019396A KR 970008347 A KR970008347 A KR 970008347A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- layer
- metal layer
- semiconductor device
- titanium
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 반도체 소자의 금속층 형성방법에 관한 것으로, 콘택홀내에서의 금속의 층덮힘을 향상시키기 위하여 금속(Metal)을 증착하기 전에 베리어(Barrier) 금속층의 표면에 존재하는 산화물을 제거시키므로써 소자의 신뢰성이 향상될 수 있도록 한 반도체 소자의 금속층 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a metal layer of a semiconductor device, wherein the oxides on the surface of the barrier metal layer are removed prior to depositing the metal to improve the layer covering of the metal in the contact hole. The present invention relates to a method for forming a metal layer of a semiconductor device so that the reliability can be improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A 내지 제1D도는 본 발명에 따른 반도체 소자의 금속층 형성 방법을 설명하기 위한 소자의 단면도.1A to 1D are cross-sectional views of a device for explaining a method of forming a metal layer of a semiconductor device according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950019396A KR970008347A (en) | 1995-07-04 | 1995-07-04 | Metal layer formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950019396A KR970008347A (en) | 1995-07-04 | 1995-07-04 | Metal layer formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970008347A true KR970008347A (en) | 1997-02-24 |
Family
ID=66526634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950019396A KR970008347A (en) | 1995-07-04 | 1995-07-04 | Metal layer formation method of semiconductor device |
Country Status (1)
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KR (1) | KR970008347A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022119376A1 (en) * | 2020-12-03 | 2022-06-09 | 주식회사 젠스엔지니어링 | Method for separation and purification of hydrogen from decomposed mixed gas of ammonia |
WO2023128071A1 (en) * | 2021-12-31 | 2023-07-06 | 한국에너지기술연구원 | Pressure swing adsorption apparatus for hydrogen purification from ammonia-cracked gas and hydrogen purification method using same |
-
1995
- 1995-07-04 KR KR1019950019396A patent/KR970008347A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022119376A1 (en) * | 2020-12-03 | 2022-06-09 | 주식회사 젠스엔지니어링 | Method for separation and purification of hydrogen from decomposed mixed gas of ammonia |
KR20220078120A (en) * | 2020-12-03 | 2022-06-10 | 주식회사 젠스엔지니어링 | Method of Separating and Purifying Hydrogen from Gas Mixture of Ammonia Decompositions |
WO2023128071A1 (en) * | 2021-12-31 | 2023-07-06 | 한국에너지기술연구원 | Pressure swing adsorption apparatus for hydrogen purification from ammonia-cracked gas and hydrogen purification method using same |
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