KR970008347A - Metal layer formation method of semiconductor device - Google Patents

Metal layer formation method of semiconductor device Download PDF

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Publication number
KR970008347A
KR970008347A KR1019950019396A KR19950019396A KR970008347A KR 970008347 A KR970008347 A KR 970008347A KR 1019950019396 A KR1019950019396 A KR 1019950019396A KR 19950019396 A KR19950019396 A KR 19950019396A KR 970008347 A KR970008347 A KR 970008347A
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KR
South Korea
Prior art keywords
forming
layer
metal layer
semiconductor device
titanium
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Application number
KR1019950019396A
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Korean (ko)
Inventor
정창원
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019950019396A priority Critical patent/KR970008347A/en
Publication of KR970008347A publication Critical patent/KR970008347A/en

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  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 금속층 형성방법에 관한 것으로, 콘택홀내에서의 금속의 층덮힘을 향상시키기 위하여 금속(Metal)을 증착하기 전에 베리어(Barrier) 금속층의 표면에 존재하는 산화물을 제거시키므로써 소자의 신뢰성이 향상될 수 있도록 한 반도체 소자의 금속층 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a metal layer of a semiconductor device, wherein the oxides on the surface of the barrier metal layer are removed prior to depositing the metal to improve the layer covering of the metal in the contact hole. The present invention relates to a method for forming a metal layer of a semiconductor device so that the reliability can be improved.

Description

반도체 소자의 금속층 형성방법Metal layer formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A 내지 제1D도는 본 발명에 따른 반도체 소자의 금속층 형성 방법을 설명하기 위한 소자의 단면도.1A to 1D are cross-sectional views of a device for explaining a method of forming a metal layer of a semiconductor device according to the present invention.

Claims (4)

반도체 소자의 금속층 형성방법에 있어서, 접합부 형성된 실리콘기판상에 절연층을 형성하고, 상기 접합부가 노출되도록 상기 절연층을 패터닝하여 콘택홀을 형성한 상태에서 베리어 금속층을 형성하기 위하여 전체 상부면에 제1티타늄층을 형성한 후 인-시투로 티타늄나이트라이드층을 형성하는 단계와, 상기 단계로부터 상기 티타늄나이트라이드층의 전도성을 향상시키기 위하여 열처리공정을 실시하는 단계와, 상기 단계로부터 상기 열처리공정후 상기 베리어 금속층의 표면에 생성된 산화물을 제거하는 단계와, 상기 단계로부터 전체 상부면에 제2티타늄층을 형성하고, 인-시투로 상기 콘택트홀이 충분히 매립되도록 금속층을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 금속층 형성방법.A method of forming a metal layer of a semiconductor device, the method comprising: forming an insulating layer on a silicon substrate on which a junction is formed, and forming a barrier metal layer in a state where the contact layer is formed by patterning the insulation layer to expose the junction; Forming a titanium nitride layer after forming a titanium layer, and performing a heat treatment process to improve conductivity of the titanium nitride layer from the step; and after the heat treatment process from the step Removing the oxide generated on the surface of the barrier metal layer, and forming a second titanium layer on the entire upper surface from the step, and forming a metal layer to sufficiently fill the contact hole in-situ. A metal layer forming method of a semiconductor device. 제1항에 있어서, 상기 제1 및 제2티타늄층은 450 내지 550℃의 고온에서 250내지 350Å의 두께로 형성되는 것을 특징으로 하는 반도체 소자의 금속층 형성방법.The method of claim 1, wherein the first and second titanium layers are formed at a thickness of 250 to 350 kPa at a high temperature of 450 to 550 ° C. 7. 제1항에 있어서, 상기 티타늄나이트라이드층은 1.0E-7이하의 고진공 및 450 내지 550℃의 고온에서 650 내지 750A의 두께로 형성되는 것을 특징으로 하는 반도체 소자의 금속층 형성방법.The method of claim 1, wherein the titanium nitride layer is formed to a thickness of 650 to 750 A at a high vacuum of 1.0E −7 or less and a high temperature of 450 to 550 ° C. 7 . 제1항에 있어서, 상기 산화물은 아르곤 원자를 이용한 ECR 방법으로 제거되는 것을 특징으로 하는 반도체 소자의 금속층 형성방법.The method of claim 1, wherein the oxide is removed by an ECR method using argon atoms. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950019396A 1995-07-04 1995-07-04 Metal layer formation method of semiconductor device KR970008347A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950019396A KR970008347A (en) 1995-07-04 1995-07-04 Metal layer formation method of semiconductor device

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Application Number Priority Date Filing Date Title
KR1019950019396A KR970008347A (en) 1995-07-04 1995-07-04 Metal layer formation method of semiconductor device

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KR970008347A true KR970008347A (en) 1997-02-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022119376A1 (en) * 2020-12-03 2022-06-09 주식회사 젠스엔지니어링 Method for separation and purification of hydrogen from decomposed mixed gas of ammonia
WO2023128071A1 (en) * 2021-12-31 2023-07-06 한국에너지기술연구원 Pressure swing adsorption apparatus for hydrogen purification from ammonia-cracked gas and hydrogen purification method using same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022119376A1 (en) * 2020-12-03 2022-06-09 주식회사 젠스엔지니어링 Method for separation and purification of hydrogen from decomposed mixed gas of ammonia
KR20220078120A (en) * 2020-12-03 2022-06-10 주식회사 젠스엔지니어링 Method of Separating and Purifying Hydrogen from Gas Mixture of Ammonia Decompositions
WO2023128071A1 (en) * 2021-12-31 2023-07-06 한국에너지기술연구원 Pressure swing adsorption apparatus for hydrogen purification from ammonia-cracked gas and hydrogen purification method using same

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