KR970008329B1 - Method for forming a fine resist pattern using an alkaline film covered photoresist - Google Patents
Method for forming a fine resist pattern using an alkaline film covered photoresist Download PDFInfo
- Publication number
- KR970008329B1 KR970008329B1 KR93016121A KR930016121A KR970008329B1 KR 970008329 B1 KR970008329 B1 KR 970008329B1 KR 93016121 A KR93016121 A KR 93016121A KR 930016121 A KR930016121 A KR 930016121A KR 970008329 B1 KR970008329 B1 KR 970008329B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- resist pattern
- film covered
- fine resist
- alkaline film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/151—Matting or other surface reflectivity altering material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4221444A JP2829555B2 (ja) | 1992-08-20 | 1992-08-20 | 微細レジストパターンの形成方法 |
JP92-22144 | 1992-08-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940004723A KR940004723A (ko) | 1994-03-15 |
KR970008329B1 true KR970008329B1 (en) | 1997-05-23 |
Family
ID=16766835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93016121A KR970008329B1 (en) | 1992-08-20 | 1993-08-19 | Method for forming a fine resist pattern using an alkaline film covered photoresist |
Country Status (4)
Country | Link |
---|---|
US (1) | US5554489A (ko) |
JP (1) | JP2829555B2 (ko) |
KR (1) | KR970008329B1 (ko) |
DE (1) | DE4327662C2 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
JP2996127B2 (ja) * | 1995-02-17 | 1999-12-27 | 日本電気株式会社 | パターン形成方法 |
DE69706288T2 (de) * | 1996-03-07 | 2002-05-16 | Clariant Finance (Bvi) Ltd., Road Town | Antireflexions-unterbeschichtungen durch brechungsindexmodifikation mit anomaler dispersion |
WO1997033200A1 (en) * | 1996-03-07 | 1997-09-12 | Clariant International, Ltd. | Light-absorbing antireflective layers with improved performance due to refractive index optimization |
JP3694703B2 (ja) * | 1996-04-25 | 2005-09-14 | Azエレクトロニックマテリアルズ株式会社 | 反射防止コーティング用組成物 |
US6274295B1 (en) | 1997-03-06 | 2001-08-14 | Clariant Finance (Bvi) Limited | Light-absorbing antireflective layers with improved performance due to refractive index optimization |
JPH10261574A (ja) * | 1997-03-19 | 1998-09-29 | Fujitsu Ltd | 半導体装置の製造方法 |
US6428894B1 (en) * | 1997-06-04 | 2002-08-06 | International Business Machines Corporation | Tunable and removable plasma deposited antireflective coatings |
US6673523B2 (en) * | 1999-03-09 | 2004-01-06 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
US6984482B2 (en) | 1999-06-03 | 2006-01-10 | Hynix Semiconductor Inc. | Top-coating composition for photoresist and process for forming fine pattern using the same |
JP2001142221A (ja) | 1999-11-10 | 2001-05-25 | Clariant (Japan) Kk | 反射防止コーティング用組成物 |
TW556047B (en) * | 2000-07-31 | 2003-10-01 | Shipley Co Llc | Coated substrate, method for forming photoresist relief image, and antireflective composition |
JP2003264309A (ja) * | 2002-03-08 | 2003-09-19 | Toshiba Corp | 光半導体装置および光半導体装置の製造方法 |
JP3707780B2 (ja) * | 2002-06-24 | 2005-10-19 | 東京応化工業株式会社 | パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法 |
JP4583860B2 (ja) * | 2004-10-04 | 2010-11-17 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、並びに、半導体装置及びその製造方法 |
US7667819B2 (en) * | 2005-02-17 | 2010-02-23 | Massachusetts Institute Of Technology | System and method for contrast enhanced zone plate array lithography |
US7714988B2 (en) * | 2005-02-17 | 2010-05-11 | Massachusetts Institute Of Technology | System and method for absorbance modulation lithography |
DE202014007986U1 (de) | 2014-10-01 | 2016-01-05 | GM Global Technology Operations LLC (n. d. Gesetzen des Staates Delaware) | Schalldämpfer |
CN109642010B (zh) | 2016-08-19 | 2021-06-04 | 科思创德国股份有限公司 | 聚噁唑烷酮化合物的合成方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3342579A1 (de) * | 1982-11-27 | 1984-05-30 | Basf Ag, 6700 Ludwigshafen | Bildaufzeichnungsmaterialien und damit durchfuehrbare bildaufzeichnungsverfahren |
GB8414867D0 (en) * | 1984-06-11 | 1984-07-18 | Minnesota Mining & Mfg | Pre-press proofing system |
US4816380A (en) * | 1986-06-27 | 1989-03-28 | Texas Instruments Incorporated | Water soluble contrast enhancement layer method of forming resist image on semiconductor chip |
US4769306A (en) * | 1987-09-23 | 1988-09-06 | Polaroid Corporation | Anti-reflection layer of silica matrix with fluorinated polylmer particles |
DE3736980A1 (de) * | 1987-10-31 | 1989-05-18 | Basf Ag | Mehrschichtiges, flaechenfoermiges, lichtempfindliches aufzeichnungsmaterial |
JPH01231040A (ja) * | 1988-03-11 | 1989-09-14 | Oki Electric Ind Co Ltd | 光脱色性層用材料及びそれを用いたパターン形成方法 |
JPH01231038A (ja) * | 1988-03-11 | 1989-09-14 | Oki Electric Ind Co Ltd | 光脱色性層用材料及びそれを用いたパターン形成方法 |
JPH02212851A (ja) * | 1989-02-14 | 1990-08-24 | Oki Electric Ind Co Ltd | コントラスト増強用の光脱色性層用材料およびそれを用いたパターン形成方法 |
DE4117127A1 (de) * | 1991-05-25 | 1992-11-26 | Basf Ag | Lichtempfindliche aufzeichnungselemente, verfahren zu ihrer herstellung und weiterverarbeitung sowie geraete fuer die durchfuehrung dieser verfahren |
-
1992
- 1992-08-20 JP JP4221444A patent/JP2829555B2/ja not_active Expired - Fee Related
-
1993
- 1993-08-17 DE DE4327662A patent/DE4327662C2/de not_active Expired - Fee Related
- 1993-08-19 KR KR93016121A patent/KR970008329B1/ko not_active IP Right Cessation
-
1994
- 1994-12-02 US US08/353,256 patent/US5554489A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE4327662C2 (de) | 1995-10-05 |
US5554489A (en) | 1996-09-10 |
JP2829555B2 (ja) | 1998-11-25 |
DE4327662A1 (de) | 1994-02-24 |
KR940004723A (ko) | 1994-03-15 |
JPH0669120A (ja) | 1994-03-11 |
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Legal Events
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20020905 Year of fee payment: 6 |
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LAPS | Lapse due to unpaid annual fee |