KR970004100A - 선형 박막 커패시터를 가진 집적회로 - Google Patents

선형 박막 커패시터를 가진 집적회로 Download PDF

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Publication number
KR970004100A
KR970004100A KR1019960019906A KR19960019906A KR970004100A KR 970004100 A KR970004100 A KR 970004100A KR 1019960019906 A KR1019960019906 A KR 1019960019906A KR 19960019906 A KR19960019906 A KR 19960019906A KR 970004100 A KR970004100 A KR 970004100A
Authority
KR
South Korea
Prior art keywords
integrated circuit
dielectric region
electrode
forming
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019960019906A
Other languages
English (en)
Korean (ko)
Inventor
마일즈 오브리안 2세 헨리
켄트 와츠 로데릭
Original Assignee
로버트 이. 루드닉
에이 티 앤드 티 아이피엠 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로버트 이. 루드닉, 에이 티 앤드 티 아이피엠 코포레이션 filed Critical 로버트 이. 루드닉
Publication of KR970004100A publication Critical patent/KR970004100A/ko
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/62Capacitors having potential barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/60Capacitors
    • H10D1/68Capacitors having no potential barriers
    • H10D1/692Electrodes
    • H10D1/696Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019960019906A 1995-06-07 1996-06-05 선형 박막 커패시터를 가진 집적회로 Ceased KR970004100A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US47405095A 1995-06-07 1995-06-07
US474,050 1995-06-07
US61797696A 1996-03-15 1996-03-15
US617,976 1996-03-15

Publications (1)

Publication Number Publication Date
KR970004100A true KR970004100A (ko) 1997-01-29

Family

ID=27044330

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960019906A Ceased KR970004100A (ko) 1995-06-07 1996-06-05 선형 박막 커패시터를 가진 집적회로

Country Status (3)

Country Link
JP (1) JPH09116093A (enExample)
KR (1) KR970004100A (enExample)
TW (1) TW319915B (enExample)

Also Published As

Publication number Publication date
JPH09116093A (ja) 1997-05-02
TW319915B (enExample) 1997-11-11

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