JPH09116093A - 線形薄膜容量を有する集積回路 - Google Patents
線形薄膜容量を有する集積回路Info
- Publication number
- JPH09116093A JPH09116093A JP8145845A JP14584596A JPH09116093A JP H09116093 A JPH09116093 A JP H09116093A JP 8145845 A JP8145845 A JP 8145845A JP 14584596 A JP14584596 A JP 14584596A JP H09116093 A JPH09116093 A JP H09116093A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- electrode
- thin film
- dielectric
- dielectric region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47405095A | 1995-06-07 | 1995-06-07 | |
| US61797696A | 1996-03-15 | 1996-03-15 | |
| US08/617976 | 1996-03-15 | ||
| US08/474050 | 1996-03-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09116093A true JPH09116093A (ja) | 1997-05-02 |
Family
ID=27044330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8145845A Withdrawn JPH09116093A (ja) | 1995-06-07 | 1996-06-07 | 線形薄膜容量を有する集積回路 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH09116093A (enExample) |
| KR (1) | KR970004100A (enExample) |
| TW (1) | TW319915B (enExample) |
-
1996
- 1996-05-03 TW TW084108869A01A patent/TW319915B/zh active
- 1996-06-05 KR KR1019960019906A patent/KR970004100A/ko not_active Ceased
- 1996-06-07 JP JP8145845A patent/JPH09116093A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| TW319915B (enExample) | 1997-11-11 |
| KR970004100A (ko) | 1997-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6040594A (en) | High permittivity ST thin film and a capacitor for a semiconductor integrated circuit having such a thin film | |
| JP2843704B2 (ja) | 単結晶半導体基板上に粗化された表面コンデンサの製造方法 | |
| US5122923A (en) | Thin-film capacitors and process for manufacturing the same | |
| KR0164874B1 (ko) | 비결정질 유전체막을 갖는 전압 가변 캐패시터 | |
| US6777809B2 (en) | BEOL decoupling capacitor | |
| US6103622A (en) | Silicide process for mixed mode product with dual layer capacitor and polysilicon resistor which is protected with a capacitor protective oxide during silicidation of FET device | |
| US6069050A (en) | Cross-coupled capacitors for improved voltage coefficient | |
| US6372286B1 (en) | Barium strontium titanate integrated circuit capacitors and process for making the same | |
| JP2001077111A (ja) | アルミニウムをドープしたジルコニウム誘電体膜のトランジスタ構造およびその堆積方法 | |
| WO2003050873A1 (en) | Voltage-variable capacitor with increased current conducting perimeter | |
| JPH08274256A (ja) | 半導体装置及びその製造方法 | |
| US6864146B2 (en) | Metal oxide integrated circuit on silicon germanium substrate | |
| JP2002043517A (ja) | 半導体装置およびその製造方法 | |
| KR100753777B1 (ko) | Zr-Ge-Ti-O 또는 Hf-Ge-Ti-O의 유전체 물질을 포함하는 물품 및 그 제조 방법 | |
| US5721043A (en) | Method of forming improved thin film dielectrics by Pb doping | |
| JPH09116093A (ja) | 線形薄膜容量を有する集積回路 | |
| US20040259316A1 (en) | Fabrication of parallel plate capacitors using BST thin films | |
| JPH0687490B2 (ja) | 薄膜コンデンサおよびその製造方法 | |
| US6432473B1 (en) | PB substituted perovskites for thin films dielectrics | |
| JPH0644601B2 (ja) | 薄膜コンデンサおよびその製造方法 | |
| Nishitsuji et al. | Advanced GaAs-MMIC process technology using high-dielectric constant thin film capacitors by low-temperature RF sputtering method | |
| US7170736B2 (en) | Capacitor having low resistance electrode including a thin silicon layer | |
| KR100282459B1 (ko) | 강유전성램 캐패시터의 제조방법 | |
| JPH0380562A (ja) | 薄膜コンデンサの製造方法 | |
| JPH04360507A (ja) | 薄膜コンデンサー |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20030902 |