KR970003887B1 - 집적 회로 어셈블리로부터 금속-함유 오염물질을 제거하기 위한 기체상 세정제 및 이를 사용하는 방법 - Google Patents

집적 회로 어셈블리로부터 금속-함유 오염물질을 제거하기 위한 기체상 세정제 및 이를 사용하는 방법 Download PDF

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Publication number
KR970003887B1
KR970003887B1 KR1019930024960A KR930024960A KR970003887B1 KR 970003887 B1 KR970003887 B1 KR 970003887B1 KR 1019930024960 A KR1019930024960 A KR 1019930024960A KR 930024960 A KR930024960 A KR 930024960A KR 970003887 B1 KR970003887 B1 KR 970003887B1
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KR
South Korea
Prior art keywords
metal
substrate
cleaned
ammonia
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019930024960A
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English (en)
Korean (ko)
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KR940012523A (ko
Inventor
알렌 죠지 마크
아더 볼링 데이비드
Original Assignee
에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
윌리암 에프. 마쉬
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Application filed by 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드, 윌리암 에프. 마쉬 filed Critical 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드
Publication of KR940012523A publication Critical patent/KR940012523A/ko
Application granted granted Critical
Publication of KR970003887B1 publication Critical patent/KR970003887B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Silicon Compounds (AREA)
  • Drying Of Semiconductors (AREA)
KR1019930024960A 1992-11-25 1993-11-23 집적 회로 어셈블리로부터 금속-함유 오염물질을 제거하기 위한 기체상 세정제 및 이를 사용하는 방법 Expired - Fee Related KR970003887B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/982,196 US5332444A (en) 1992-11-25 1992-11-25 Gas phase cleaning agents for removing metal containing contaminants from integrated circuit assemblies and a process for using the same
US07/982,196 1992-11-25

Publications (2)

Publication Number Publication Date
KR940012523A KR940012523A (ko) 1994-06-23
KR970003887B1 true KR970003887B1 (ko) 1997-03-22

Family

ID=25528925

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930024960A Expired - Fee Related KR970003887B1 (ko) 1992-11-25 1993-11-23 집적 회로 어셈블리로부터 금속-함유 오염물질을 제거하기 위한 기체상 세정제 및 이를 사용하는 방법

Country Status (5)

Country Link
US (1) US5332444A (enExample)
EP (1) EP0605785A3 (enExample)
JP (1) JP2533834B2 (enExample)
KR (1) KR970003887B1 (enExample)
TW (1) TW268973B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5521119A (en) * 1994-07-13 1996-05-28 Taiwan Semiconductor Manufacturing Co. Post treatment of tungsten etching back
JP2862797B2 (ja) * 1994-08-11 1999-03-03 日本酸素株式会社 半導体基板の乾式洗浄方法
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US5766367A (en) * 1996-05-14 1998-06-16 Sandia Corporation Method for preventing micromechanical structures from adhering to another object
US5954884A (en) * 1997-03-17 1999-09-21 Fsi International Inc. UV/halogen metals removal process
US6065481A (en) 1997-03-26 2000-05-23 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced HF etch process performance
US6107166A (en) * 1997-08-29 2000-08-22 Fsi International, Inc. Vapor phase cleaning of alkali and alkaline earth metals
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
US6303972B1 (en) 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US7067861B1 (en) * 1998-11-25 2006-06-27 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US6734120B1 (en) * 1999-02-19 2004-05-11 Axcelis Technologies, Inc. Method of photoresist ash residue removal
US6494959B1 (en) * 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
US6528427B2 (en) 2001-03-30 2003-03-04 Lam Research Corporation Methods for reducing contamination of semiconductor substrates
AU2002359450A1 (en) * 2001-12-06 2003-06-23 The Procter And Gamble Company Compositions and methods for removal of incidental soils from fabric articles via soil modification
KR100474594B1 (ko) * 2002-08-28 2005-03-10 주식회사 하이닉스반도체 반도체 소자의 세정방법
WO2006006169A2 (en) * 2004-07-14 2006-01-19 By-Pass, Inc. Material delivery system
JP2007079205A (ja) * 2005-09-15 2007-03-29 Ricoh Co Ltd 静電潜像現像用トナー、これを用いた現像剤および画像形成方法
ES2349492T3 (es) * 2008-04-11 2011-01-04 Sika Technology Ag Procedimiento para aplicar una composición mediadora de adhesión sobre un sustrato.
US20100032654A1 (en) * 2008-08-11 2010-02-11 Motorola, Inc. Semiconductor Device Having Silane Treated Interface
US9611552B2 (en) 2015-03-13 2017-04-04 Varian Semiconductor Equipment Associates, Inc. System and method for controllable non-volatile metal removal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135577A (en) * 1977-04-30 1978-11-27 Fujitsu Ltd Coating method of pmma resist
US4592926A (en) * 1984-05-21 1986-06-03 Machine Technology, Inc. Processing apparatus and method
JPS63199423A (ja) * 1987-02-16 1988-08-17 Toshiba Corp 半導体基板表面処理方法
US4768291A (en) * 1987-03-12 1988-09-06 Monarch Technologies Corporation Apparatus for dry processing a semiconductor wafer
US5049201A (en) * 1989-06-22 1991-09-17 International Business Machines Corporation Method of inhibiting corrosion in an electronic package
JPH03208343A (ja) * 1990-01-10 1991-09-11 Fujitsu Ltd 半導体基板用洗浄剤
US5094701A (en) * 1990-03-30 1992-03-10 Air Products And Chemicals, Inc. Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same
JP3074858B2 (ja) * 1991-11-13 2000-08-07 日本電気株式会社 半導体基板の表面処理装置及び表面処理方法

Also Published As

Publication number Publication date
EP0605785A3 (en) 1994-11-02
TW268973B (enExample) 1996-01-21
US5332444A (en) 1994-07-26
JPH06228592A (ja) 1994-08-16
EP0605785A2 (en) 1994-07-13
JP2533834B2 (ja) 1996-09-11
KR940012523A (ko) 1994-06-23

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