KR960701472A - Jfet를 지니는 cmos 디바이스의 제조 방법(fabrication process fro cmos device with jfet) - Google Patents

Jfet를 지니는 cmos 디바이스의 제조 방법(fabrication process fro cmos device with jfet)

Info

Publication number
KR960701472A
KR960701472A KR1019950703597A KR19950703597A KR960701472A KR 960701472 A KR960701472 A KR 960701472A KR 1019950703597 A KR1019950703597 A KR 1019950703597A KR 19950703597 A KR19950703597 A KR 19950703597A KR 960701472 A KR960701472 A KR 960701472A
Authority
KR
South Korea
Prior art keywords
jfet
fabrication process
cmos device
process fro
fro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019950703597A
Other languages
English (en)
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960701472A publication Critical patent/KR960701472A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
KR1019950703597A 1993-02-25 1995-08-25 Jfet를 지니는 cmos 디바이스의 제조 방법(fabrication process fro cmos device with jfet) Withdrawn KR960701472A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2379893A 1993-02-25 1993-02-25
PCT/US1994/001990 WO1994019828A1 (en) 1993-02-25 1994-02-18 Fabrication process for cmos device with jfet

Publications (1)

Publication Number Publication Date
KR960701472A true KR960701472A (ko) 1996-02-24

Family

ID=21817260

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950703597A Withdrawn KR960701472A (ko) 1993-02-25 1995-08-25 Jfet를 지니는 cmos 디바이스의 제조 방법(fabrication process fro cmos device with jfet)

Country Status (5)

Country Link
EP (1) EP0686305A1 (cg-RX-API-DMAC7.html)
JP (1) JPH08507177A (cg-RX-API-DMAC7.html)
KR (1) KR960701472A (cg-RX-API-DMAC7.html)
TW (1) TW232086B (cg-RX-API-DMAC7.html)
WO (1) WO1994019828A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0907208B1 (en) * 1997-10-02 2002-12-18 Istituto Trentino Di Cultura Process of producing a JFET device
FR2776832B1 (fr) * 1998-03-31 2000-06-16 Sgs Thomson Microelectronics Procede de fabrication de transistors jfet
JP2010177268A (ja) * 2009-01-27 2010-08-12 Asahi Kasei Electronics Co Ltd 接合型ｆｅｔ、半導体装置およびその製造方法
FI20160183L (fi) * 2016-07-14 2016-07-15 Artto Mikael Aurola Parannettu puolijohdekokoonpano

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136977A (en) * 1977-05-04 1978-11-29 Seiko Instr & Electronics Ltd Driving circuit
DE2753704C2 (de) * 1977-12-02 1986-11-06 Bernd Prof. Dr. rer.nat 5841 Holzen Höfflinger Verfahren zum gleichzeitigen Herstellen von mittels Feldoxid isolierten CMOS-Schaltungsanordnungen und Bipolartransistoren
US4403395A (en) * 1979-02-15 1983-09-13 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
JPS5854711A (ja) * 1981-09-29 1983-03-31 Nec Corp 差動増幅器
JPS6024056A (ja) * 1984-06-25 1985-02-06 Hitachi Ltd 差動増幅器
JPS6185855A (ja) * 1984-10-04 1986-05-01 Nec Corp 半導体集積回路
US5296409A (en) * 1992-05-08 1994-03-22 National Semiconductor Corporation Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process

Also Published As

Publication number Publication date
JPH08507177A (ja) 1996-07-30
EP0686305A1 (en) 1995-12-13
WO1994019828A1 (en) 1994-09-01
TW232086B (cg-RX-API-DMAC7.html) 1994-10-11

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 19950825

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid