TW232086B - - Google Patents
Info
- Publication number
- TW232086B TW232086B TW083102016A TW83102016A TW232086B TW 232086 B TW232086 B TW 232086B TW 083102016 A TW083102016 A TW 083102016A TW 83102016 A TW83102016 A TW 83102016A TW 232086 B TW232086 B TW 232086B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2379893A | 1993-02-25 | 1993-02-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW232086B true TW232086B (zh) | 1994-10-11 |
Family
ID=21817260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083102016A TW232086B (zh) | 1993-02-25 | 1994-03-08 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0686305A1 (zh) |
JP (1) | JPH08507177A (zh) |
KR (1) | KR960701472A (zh) |
TW (1) | TW232086B (zh) |
WO (1) | WO1994019828A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0907208B1 (en) * | 1997-10-02 | 2002-12-18 | Istituto Trentino Di Cultura | Process of producing a JFET device |
FR2776832B1 (fr) * | 1998-03-31 | 2000-06-16 | Sgs Thomson Microelectronics | Procede de fabrication de transistors jfet |
JP2010177268A (ja) * | 2009-01-27 | 2010-08-12 | Asahi Kasei Electronics Co Ltd | 接合型fet、半導体装置およびその製造方法 |
FI20160183L (fi) * | 2016-07-14 | 2016-07-15 | Artto Mikael Aurola | Parannettu puolijohdekokoonpano |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53136977A (en) * | 1977-05-04 | 1978-11-29 | Seiko Instr & Electronics Ltd | Driving circuit |
DE2753704C2 (de) * | 1977-12-02 | 1986-11-06 | Bernd Prof. Dr. rer.nat 5841 Holzen Höfflinger | Verfahren zum gleichzeitigen Herstellen von mittels Feldoxid isolierten CMOS-Schaltungsanordnungen und Bipolartransistoren |
US4403395A (en) * | 1979-02-15 | 1983-09-13 | Texas Instruments Incorporated | Monolithic integration of logic, control and high voltage interface circuitry |
JPS5854711A (ja) * | 1981-09-29 | 1983-03-31 | Nec Corp | 差動増幅器 |
JPS6024056A (ja) * | 1984-06-25 | 1985-02-06 | Hitachi Ltd | 差動増幅器 |
JPS6185855A (ja) * | 1984-10-04 | 1986-05-01 | Nec Corp | 半導体集積回路 |
US5296409A (en) * | 1992-05-08 | 1994-03-22 | National Semiconductor Corporation | Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process |
-
1994
- 1994-02-18 JP JP6519263A patent/JPH08507177A/ja active Pending
- 1994-02-18 WO PCT/US1994/001990 patent/WO1994019828A1/en not_active Application Discontinuation
- 1994-02-18 EP EP94909780A patent/EP0686305A1/en not_active Withdrawn
- 1994-03-08 TW TW083102016A patent/TW232086B/zh active
-
1995
- 1995-08-25 KR KR1019950703597A patent/KR960701472A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH08507177A (ja) | 1996-07-30 |
WO1994019828A1 (en) | 1994-09-01 |
KR960701472A (ko) | 1996-02-24 |
EP0686305A1 (en) | 1995-12-13 |