TW232086B - - Google Patents

Info

Publication number
TW232086B
TW232086B TW083102016A TW83102016A TW232086B TW 232086 B TW232086 B TW 232086B TW 083102016 A TW083102016 A TW 083102016A TW 83102016 A TW83102016 A TW 83102016A TW 232086 B TW232086 B TW 232086B
Authority
TW
Taiwan
Application number
TW083102016A
Original Assignee
Nat Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Semiconductor Corp filed Critical Nat Semiconductor Corp
Application granted granted Critical
Publication of TW232086B publication Critical patent/TW232086B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW083102016A 1993-02-25 1994-03-08 TW232086B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2379893A 1993-02-25 1993-02-25

Publications (1)

Publication Number Publication Date
TW232086B true TW232086B (zh) 1994-10-11

Family

ID=21817260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083102016A TW232086B (zh) 1993-02-25 1994-03-08

Country Status (5)

Country Link
EP (1) EP0686305A1 (zh)
JP (1) JPH08507177A (zh)
KR (1) KR960701472A (zh)
TW (1) TW232086B (zh)
WO (1) WO1994019828A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0907208B1 (en) * 1997-10-02 2002-12-18 Istituto Trentino Di Cultura Process of producing a JFET device
FR2776832B1 (fr) * 1998-03-31 2000-06-16 Sgs Thomson Microelectronics Procede de fabrication de transistors jfet
JP2010177268A (ja) * 2009-01-27 2010-08-12 Asahi Kasei Electronics Co Ltd 接合型fet、半導体装置およびその製造方法
FI20160183L (fi) * 2016-07-14 2016-07-15 Artto Mikael Aurola Parannettu puolijohdekokoonpano

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136977A (en) * 1977-05-04 1978-11-29 Seiko Instr & Electronics Ltd Driving circuit
DE2753704C2 (de) * 1977-12-02 1986-11-06 Bernd Prof. Dr. rer.nat 5841 Holzen Höfflinger Verfahren zum gleichzeitigen Herstellen von mittels Feldoxid isolierten CMOS-Schaltungsanordnungen und Bipolartransistoren
US4403395A (en) * 1979-02-15 1983-09-13 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
JPS5854711A (ja) * 1981-09-29 1983-03-31 Nec Corp 差動増幅器
JPS6024056A (ja) * 1984-06-25 1985-02-06 Hitachi Ltd 差動増幅器
JPS6185855A (ja) * 1984-10-04 1986-05-01 Nec Corp 半導体集積回路
US5296409A (en) * 1992-05-08 1994-03-22 National Semiconductor Corporation Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process

Also Published As

Publication number Publication date
JPH08507177A (ja) 1996-07-30
WO1994019828A1 (en) 1994-09-01
KR960701472A (ko) 1996-02-24
EP0686305A1 (en) 1995-12-13

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