KR960043011A - 플라즈마 가공중에 기판의 표면상으로 플라즈마를 집중시키도록 웨이퍼를 지지하기 위한 척조립체 및 방법 - Google Patents

플라즈마 가공중에 기판의 표면상으로 플라즈마를 집중시키도록 웨이퍼를 지지하기 위한 척조립체 및 방법 Download PDF

Info

Publication number
KR960043011A
KR960043011A KR1019960015622A KR19960015622A KR960043011A KR 960043011 A KR960043011 A KR 960043011A KR 1019960015622 A KR1019960015622 A KR 1019960015622A KR 19960015622 A KR19960015622 A KR 19960015622A KR 960043011 A KR960043011 A KR 960043011A
Authority
KR
South Korea
Prior art keywords
platform
substrate
upper portion
chuck assembly
support surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019960015622A
Other languages
English (en)
Korean (ko)
Inventor
굽타 아낸트
브이.에스. 라나 비렌드라
Original Assignee
조셉 제이. 스위니
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 조셉 제이. 스위니, 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 조셉 제이. 스위니
Publication of KR960043011A publication Critical patent/KR960043011A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
KR1019960015622A 1995-05-11 1996-05-11 플라즈마 가공중에 기판의 표면상으로 플라즈마를 집중시키도록 웨이퍼를 지지하기 위한 척조립체 및 방법 Withdrawn KR960043011A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44116095A 1995-05-11 1995-05-11
US08/441,160 1995-05-11

Publications (1)

Publication Number Publication Date
KR960043011A true KR960043011A (ko) 1996-12-21

Family

ID=23751780

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960015622A Withdrawn KR960043011A (ko) 1995-05-11 1996-05-11 플라즈마 가공중에 기판의 표면상으로 플라즈마를 집중시키도록 웨이퍼를 지지하기 위한 척조립체 및 방법

Country Status (3)

Country Link
EP (1) EP0742579A2 (https=)
JP (1) JPH0922934A (https=)
KR (1) KR960043011A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100648401B1 (ko) * 2004-10-13 2006-11-24 주식회사 에이디피엔지니어링 플라즈마 처리장치
KR100650925B1 (ko) * 2004-10-13 2006-11-29 주식회사 에이디피엔지니어링 플라즈마 처리장치

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5803977A (en) * 1992-09-30 1998-09-08 Applied Materials, Inc. Apparatus for full wafer deposition
JP3566740B2 (ja) * 1992-09-30 2004-09-15 アプライド マテリアルズ インコーポレイテッド 全ウエハデポジション用装置
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US20050133166A1 (en) * 2003-12-19 2005-06-23 Applied Materials, Inc. Tuned potential pedestal for mask etch processing apparatus
DE102005032547B4 (de) * 2005-07-12 2010-01-07 Texas Instruments Deutschland Gmbh Wafer-Klemmanordnung zur Aufnahme eines Wafers während eines Abscheidungsverfahrens
JP4677474B2 (ja) * 2008-07-28 2011-04-27 キヤノンアネルバ株式会社 プラズマ処理装置用基板ホルダーにおける特性補正リングの温度制御方法及びプラズマ処理装置用基板ホルダー
US10553404B2 (en) * 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US12110589B2 (en) * 2017-08-01 2024-10-08 Applied Materials, Inc. Methods for metal oxide post-treatment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0343502A3 (en) * 1988-05-23 1991-04-17 Lam Research Corporation Method and system for clamping semiconductor wafers
DE69401863T2 (de) * 1993-07-15 1997-07-03 Applied Materials Inc Verbesserte Suszeptor Ausführung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100648401B1 (ko) * 2004-10-13 2006-11-24 주식회사 에이디피엔지니어링 플라즈마 처리장치
KR100650925B1 (ko) * 2004-10-13 2006-11-29 주식회사 에이디피엔지니어링 플라즈마 처리장치

Also Published As

Publication number Publication date
JPH0922934A (ja) 1997-01-21
EP0742579A2 (en) 1996-11-13
EP0742579A3 (https=) 1996-12-04

Similar Documents

Publication Publication Date Title
KR970003610A (ko) 플라즈마 처리장치
KR960043011A (ko) 플라즈마 가공중에 기판의 표면상으로 플라즈마를 집중시키도록 웨이퍼를 지지하기 위한 척조립체 및 방법
US5372674A (en) Electrode for use in a plasma assisted chemical etching process
WO1999010566A3 (en) Process chamber and method for depositing and/or removing material on a substrate
KR970030400A (ko) 반도체 웨이퍼 정렬 부재와 클램프 링
KR970008335A (ko) 매엽식(枚葉式) 처리장치
KR960002623A (ko) 플라즈마 반응기를 위한 개선된 정치식 포커스 링
EP0732728A3 (en) Plasma reactor and pedestal for supporting semiconductor substrate in a plasma reactor
US6203661B1 (en) Brim and gas escape for non-contact wafer holder
JPS6269620A (ja) プラズマ処理装置
JPS6210687B2 (https=)
US6165276A (en) Apparatus for preventing plasma etching of a wafer clamp in semiconductor fabrication processes
JP2981795B2 (ja) 静電チャック
KR970063636A (ko) 웨이퍼 로딩용 스테이지를 갖춘 반도체 제조 장치
JPS6316625A (ja) ドライエツチング用電極
JPH10176267A (ja) スパッタ装置
KR970065779A (ko) 화학기상증착장치
KR20060079335A (ko) 반도체 웨이퍼의 정전척 장치
JP2740164B2 (ja) 半導体装置の製造装置
KR200198450Y1 (ko) 반도체 웨이퍼 검사장비의 척
KR19980034188A (ko) 반도체 식각설비의 하측전극판
JP2669598B2 (ja) プラズマ・エッチング・ツール
KR970077136A (ko) 웨이퍼 척을 갖춘 웨이퍼 에지 그라인딩 장치
KR19990035698U (ko) 반도체 웨이퍼의 진공척구조
JP3295398B2 (ja) 半導体工程においてプラズマのウエハークランプに対するエッチングを予防する装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000