KR960036111A - 규화크롬 저항막을 포함하는 저항콤포넌트 - Google Patents
규화크롬 저항막을 포함하는 저항콤포넌트 Download PDFInfo
- Publication number
- KR960036111A KR960036111A KR1019960006688A KR19960006688A KR960036111A KR 960036111 A KR960036111 A KR 960036111A KR 1019960006688 A KR1019960006688 A KR 1019960006688A KR 19960006688 A KR19960006688 A KR 19960006688A KR 960036111 A KR960036111 A KR 960036111A
- Authority
- KR
- South Korea
- Prior art keywords
- atomic
- resistive film
- atomic percent
- crsi
- resistive
- Prior art date
Links
- 229910021357 chromium silicide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 229910019974 CrSi Inorganic materials 0.000 claims abstract 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 9
- 239000001301 oxygen Substances 0.000 claims abstract 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract 6
- 239000011651 chromium Substances 0.000 claims abstract 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052796 boron Inorganic materials 0.000 claims abstract 5
- 229910052799 carbon Inorganic materials 0.000 claims abstract 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 238000010348 incorporation Methods 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Abstract
필요에 따라 기판위에 제공될 수 있는 한개이상의 저항막으로 그중 적어도 한개는 CrSi를 기본으로하여 합성되는 저항 콤퍼넌트에서, CrSi를 기본으로한 저항막이 5-50원자% 크롬, 10-70%원자% 실리콘 5-50원자%산소와, 1-50원자% 농도의 붕소, 탄소, 질소로 형성된 그룹의 적어도 한 요소를 포함한다. 본 발명에 따른 저항 콤포넌트의 양호한 성질은 CrSi를 기본으로한 저항막으로 산소와 탄소 또는 산소와 질소 또는 산소와 질소의 반응물의 합체에 근거한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 기판위치와 반응가스의 형태의 함수로서 저항막의 저항율을 도시하면 도면
Claims (9)
- 필요에 따라 기판위에 제공될 수 있는 한개 이상의 저항막으로 그중 적어도 한개는 CrSi를 기본으로하여 합성되는 저항 콤포넌트있어서, CrSi를 기본으로 한 저항막이 5-50원자%크롬,10-70%원자% 실리콘,5-50원자%산소와 1-50%원자% 농도의 붕소,탄소,질소로 형성된 그룹의 적어도 한 요소를 포함하는 것을 특징으로 하는 저항 콤포넌트
- 제1항에 있어서, CrSi를 기본으로 한 저항막이 20-40원자%의 코롬, 10-30%원자%의 실리콘 10-40원자%의 산소 그리고 1-40원자%의 농도의 붕소, 탄소와 질소로 형성된 그룹의 적어도 한 요소를 포함하는 것을 특징으로 하는 저항 콤포넌트
- 제1항에 있어서, CrSi를 기본으로 한 저항막은 25-35원자%의 크롬, 15-25%원자%의 실리콘, 20-30원자%의 산소 그리고 1-40%의 농도의 붕소, 탄소와 질소로 형성된 그룹의 적어도 한 요소를 포함하는 것을 특징으로 하는 저항 콤퍼넌트
- 제1항에 있어서, CrSi를 기본으로 한 저항막은 10-30원자%의 크롬 20-60%원자%의 실리콘, 20-50원자%의 산소 그리고 1-40원자%의 농도의 붕소, 탄소와 질소로 형성된 그룹의 적어도 한 요소를 포함하는 것을 특징으로하는 저항 콤포넌트
- 제1항에 있어서, CrSi를 기본으로 한 저항막은 16-20원자%의 크롬. 35-45%원자%의 실리콘,20-30원자%의 산소 그리고 15-25원자%의 탄소를 포함하는 것을 특징으로 하는 저항 콤포넌트.
- 제1항에 있어서, CrSi를 기본으로 한 저항막은 1-20원자%수소를 포함하는 것을 특징으로하는 저항 콤포넌트
- 제1항에 있어서, 상기 저항막은 부가적으로 1-5원자%의 G1,Ni,Co,Fe,A1,W,Mo,Ti,RU,또는 Cu를 포함하는 것을 특징으로 하는 저항 콤퍼넌트
- 제1항에 있어서, CrSi를 기본으로 한 저항막의 두께는 10nm내지 10㎛범위를 가지는 것을 특징으로하는 저항 콤퍼넌트
- 제1항에 있어서, 상기 기판은 Al2O3,BN,AIN,Si,SiC,Si3N4및\또는 SiO2로 구성된 것을 특징으로 하는 저항 콤포넌트.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19508387.3 | 1995-03-09 | ||
DE19508387 | 1995-03-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960036111A true KR960036111A (ko) | 1996-10-28 |
KR100396932B1 KR100396932B1 (ko) | 2004-06-16 |
Family
ID=7756146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960006688A KR100396932B1 (ko) | 1995-03-09 | 1996-03-09 | 규화크롬저항막을포함하는저항소자 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5733669A (ko) |
EP (1) | EP0736881B1 (ko) |
JP (1) | JPH08264304A (ko) |
KR (1) | KR100396932B1 (ko) |
DE (1) | DE59605278D1 (ko) |
IL (1) | IL117382A (ko) |
SG (1) | SG43248A1 (ko) |
TW (1) | TW301752B (ko) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6081014A (en) * | 1998-11-06 | 2000-06-27 | National Semiconductor Corporation | Silicon carbide chrome thin-film resistor |
US6964731B1 (en) * | 1998-12-21 | 2005-11-15 | Cardinal Cg Company | Soil-resistant coating for glass surfaces |
US6974629B1 (en) * | 1999-08-06 | 2005-12-13 | Cardinal Cg Company | Low-emissivity, soil-resistant coating for glass surfaces |
US6660365B1 (en) * | 1998-12-21 | 2003-12-09 | Cardinal Cg Company | Soil-resistant coating for glass surfaces |
EP1713736B1 (en) * | 2003-12-22 | 2016-04-27 | Cardinal CG Company | Graded photocatalytic coatings and methods of making such coatings |
DE602005003228T2 (de) | 2004-07-12 | 2008-08-28 | Cardinal Cg Co., Eden Prairie | Wartungsarme beschichtungen |
US8092660B2 (en) * | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
US7923114B2 (en) * | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
US7989094B2 (en) | 2006-04-19 | 2011-08-02 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
US7820309B2 (en) * | 2007-09-14 | 2010-10-26 | Cardinal Cg Company | Low-maintenance coatings, and methods for producing low-maintenance coatings |
JP5153439B2 (ja) * | 2008-04-25 | 2013-02-27 | 株式会社神戸製鋼所 | 硬質皮膜およびその形成方法ならびに硬質皮膜被覆部材 |
US8598681B2 (en) * | 2011-12-30 | 2013-12-03 | Stmicroelectronics Pte Ltd. | Temperature switch with resistive sensor |
WO2016027692A1 (ja) * | 2014-08-18 | 2016-02-25 | 株式会社村田製作所 | 電子部品および電子部品の製造方法 |
US9773779B2 (en) | 2015-08-06 | 2017-09-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure with resistor layer and method for forming the same |
EP3541762B1 (en) | 2016-11-17 | 2022-03-02 | Cardinal CG Company | Static-dissipative coating technology |
EP4190762A1 (en) * | 2020-07-31 | 2023-06-07 | Tosoh Corporation | Cr-si-c-based sintered body |
WO2022075238A1 (ja) * | 2020-10-06 | 2022-04-14 | パナソニックIpマネジメント株式会社 | チップ抵抗器、及び製造方法 |
Family Cites Families (20)
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US3472688A (en) * | 1965-11-19 | 1969-10-14 | Nippon Electric Co | Resistor element and method for manufacturing the same |
JPS56130374A (en) * | 1980-03-19 | 1981-10-13 | Hitachi Ltd | Thermal head |
US4591821A (en) * | 1981-06-30 | 1986-05-27 | Motorola, Inc. | Chromium-silicon-nitrogen thin film resistor and apparatus |
US4392992A (en) * | 1981-06-30 | 1983-07-12 | Motorola, Inc. | Chromium-silicon-nitrogen resistor material |
JPS5882770A (ja) * | 1981-11-13 | 1983-05-18 | Hitachi Ltd | 感熱記録ヘツド |
NL8203297A (nl) * | 1982-08-24 | 1984-03-16 | Philips Nv | Weerstandslichaam. |
US4682143A (en) * | 1985-10-30 | 1987-07-21 | Advanced Micro Devices, Inc. | Thin film chromium-silicon-carbon resistor |
JPH0712692B2 (ja) * | 1986-03-03 | 1995-02-15 | ティーディーケイ株式会社 | 薄膜型サ−マルヘツド |
US5243320A (en) * | 1988-02-26 | 1993-09-07 | Gould Inc. | Resistive metal layers and method for making same |
EP0350961B1 (en) * | 1988-07-15 | 2000-05-31 | Denso Corporation | Method of producing a semiconductor device having thin film resistor |
JPH06103787B2 (ja) * | 1988-07-26 | 1994-12-14 | 日本碍子株式会社 | 導電性膜付ガラスセラミック基板 |
JPH0770367B2 (ja) * | 1988-09-12 | 1995-07-31 | 株式会社豊田中央研究所 | 歪ゲージ用薄膜抵抗体 |
DD283755A7 (de) * | 1988-11-22 | 1990-10-24 | Akademie Der Wissenschaften Der Ddr,Dd | Praezisions-widerstands-duennschicht |
EP0394658A1 (de) * | 1989-04-24 | 1990-10-31 | Siemens Aktiengesellschaft | Verfahren zum Herstellen von Dünnfilmwiderstandsschichten |
US5264272A (en) * | 1989-06-09 | 1993-11-23 | Asahi Glass Company Ltd. | Resistor paste and ceramic substrate |
KR960005321B1 (ko) * | 1990-04-24 | 1996-04-23 | 가부시끼가이샤 히다찌세이사꾸쇼 | 박막저항체를 갖는 전자회로소자 및 그 제조방법 |
JPH0461201A (ja) * | 1990-06-29 | 1992-02-27 | Hitachi Ltd | 薄膜抵抗体 |
JP3026656B2 (ja) * | 1991-09-30 | 2000-03-27 | 株式会社デンソー | 薄膜抵抗体の製造方法 |
ES2130212T3 (es) * | 1992-06-16 | 1999-07-01 | Koninkl Philips Electronics Nv | Capa de resistencia electrica. |
CH688169A5 (de) * | 1994-01-13 | 1997-05-30 | Rmt Reinhardt Microtech Ag | Elektrische Widerstandsschicht. |
-
1996
- 1996-03-04 DE DE59605278T patent/DE59605278D1/de not_active Expired - Fee Related
- 1996-03-04 EP EP96200576A patent/EP0736881B1/de not_active Expired - Lifetime
- 1996-03-06 IL IL11738296A patent/IL117382A/xx not_active IP Right Cessation
- 1996-03-07 US US08/612,152 patent/US5733669A/en not_active Expired - Fee Related
- 1996-03-08 SG SG1996006420A patent/SG43248A1/en unknown
- 1996-03-09 KR KR1019960006688A patent/KR100396932B1/ko not_active IP Right Cessation
- 1996-03-11 JP JP8053403A patent/JPH08264304A/ja active Pending
- 1996-04-30 TW TW085105157A patent/TW301752B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP0736881A2 (de) | 1996-10-09 |
SG43248A1 (en) | 1997-10-17 |
TW301752B (ko) | 1997-04-01 |
US5733669A (en) | 1998-03-31 |
DE59605278D1 (de) | 2000-06-29 |
EP0736881B1 (de) | 2000-05-24 |
IL117382A (en) | 2000-02-29 |
IL117382A0 (en) | 1996-07-23 |
EP0736881A3 (de) | 1997-06-04 |
JPH08264304A (ja) | 1996-10-11 |
KR100396932B1 (ko) | 2004-06-16 |
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LAPS | Lapse due to unpaid annual fee |