KR960035866A - 반도체장치의 제조방법 및 반도체장치의 제조장치 - Google Patents

반도체장치의 제조방법 및 반도체장치의 제조장치 Download PDF

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Publication number
KR960035866A
KR960035866A KR1019960009052A KR19960009052A KR960035866A KR 960035866 A KR960035866 A KR 960035866A KR 1019960009052 A KR1019960009052 A KR 1019960009052A KR 19960009052 A KR19960009052 A KR 19960009052A KR 960035866 A KR960035866 A KR 960035866A
Authority
KR
South Korea
Prior art keywords
heat treatment
semiconductor device
wafer
storage plate
heat storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019960009052A
Other languages
English (en)
Korean (ko)
Inventor
미키오 타카기
Original Assignee
미키오 타카기
가부시기가이샤 에프티엘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7163768A external-priority patent/JPH0917739A/ja
Application filed by 미키오 타카기, 가부시기가이샤 에프티엘 filed Critical 미키오 타카기
Publication of KR960035866A publication Critical patent/KR960035866A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019960009052A 1995-03-30 1996-03-29 반도체장치의 제조방법 및 반도체장치의 제조장치 Withdrawn KR960035866A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7284695 1995-03-30
JP95-72846 1995-03-30
JP7163768A JPH0917739A (ja) 1995-06-29 1995-06-29 半導体装置の製造方法
JP95-163768 1995-06-29

Publications (1)

Publication Number Publication Date
KR960035866A true KR960035866A (ko) 1996-10-28

Family

ID=26413984

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960009052A Withdrawn KR960035866A (ko) 1995-03-30 1996-03-29 반도체장치의 제조방법 및 반도체장치의 제조장치

Country Status (4)

Country Link
US (1) US6159873A (enExample)
EP (1) EP0736614A3 (enExample)
KR (1) KR960035866A (enExample)
TW (1) TW291589B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000505961A (ja) * 1996-12-20 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 急速熱処理用炉
EP1142004B1 (de) * 1998-12-17 2004-10-13 Vishay Semiconductor Itzehoe GmbH Verfahren zur bor-dotierung von wafern unter einsatz eines vertikalofensystems
JP3554297B2 (ja) * 2001-07-26 2004-08-18 株式会社エフティーエル 半導体基板熱処理装置及び半導体素子の製造方法
US6887803B2 (en) * 2001-11-08 2005-05-03 Wafermasters, Inc. Gas-assisted rapid thermal processing
US6596604B1 (en) 2002-07-22 2003-07-22 Atmel Corporation Method of preventing shift of alignment marks during rapid thermal processing
US6864141B1 (en) * 2003-06-03 2005-03-08 Lsi Logic Corporation Method of incorporating nitrogen into metal silicate based dielectrics by energized nitrogen ion beams
JP4119866B2 (ja) * 2004-05-12 2008-07-16 富士通株式会社 半導体装置
JP2006229040A (ja) * 2005-02-18 2006-08-31 Matsushita Electric Ind Co Ltd 熱処理方法および熱処理装置
KR20060121370A (ko) 2005-05-24 2006-11-29 삼성전자주식회사 액정표시장치의 제조방법과 이에 의한 액정표시장치
JP2007201128A (ja) * 2006-01-26 2007-08-09 Sumitomo Electric Ind Ltd 半導体製造装置用ウエハ保持体及び半導体製造装置
US20080081112A1 (en) * 2006-09-29 2008-04-03 Paul Brabant Batch reaction chamber employing separate zones for radiant heating and resistive heating
JP5476006B2 (ja) 2009-02-13 2014-04-23 株式会社国際電気セミコンダクターサービス 基板処理装置、基板処理装置の基板保持具の固定部及び半導体装置の製造方法
JP2011091386A (ja) * 2009-09-24 2011-05-06 Semiconductor Energy Lab Co Ltd 熱処理装置、熱処理方法及び半導体装置の作製方法
CN106222753B (zh) * 2016-08-22 2018-07-06 中国科学技术大学 一种微型快速升降温退火炉
WO2021039270A1 (ja) * 2019-08-30 2021-03-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法および製造装置
KR102444786B1 (ko) * 2021-12-23 2022-09-19 주식회사 에이치피에스피 냉각 효율을 향상시키는 고압챔버

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4417347A (en) * 1981-05-12 1983-11-22 Varian Associates, Inc. Semiconductor processor incorporating blackbody radiation source with constant planar energy flux
US4512391A (en) * 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4547256A (en) * 1982-12-20 1985-10-15 Motorola, Inc. Method for thermally treating a semiconductor substrate
JPS61202419A (ja) * 1985-03-05 1986-09-08 Nippon Denso Co Ltd 半導体熱処理方法及びその装置
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
JPS622616A (ja) * 1985-06-28 1987-01-08 Toshiba Corp 半導体ウエハ−の熱処理方法
JPS6378518A (ja) * 1986-09-20 1988-04-08 Mitsubishi Electric Corp 半導体装置の製造方法
JP2530158B2 (ja) * 1987-04-23 1996-09-04 セイコーエプソン株式会社 透明基板の選択的加熱方法
JPH02139919A (ja) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp 半導体装置の製造装置
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
JPH04243126A (ja) * 1991-01-17 1992-08-31 Mitsubishi Electric Corp 半導体製造装置及びその制御方法
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
US5592581A (en) * 1993-07-19 1997-01-07 Tokyo Electron Kabushiki Kaisha Heat treatment apparatus
JPH0766148A (ja) * 1993-08-24 1995-03-10 Tokyo Electron Ltd 熱処理装置および熱処理方法
US5434107A (en) * 1994-01-28 1995-07-18 Texas Instruments Incorporated Method for planarization
JPH07254591A (ja) * 1994-03-16 1995-10-03 Toshiba Corp 熱処理装置

Also Published As

Publication number Publication date
TW291589B (enExample) 1996-11-21
US6159873A (en) 2000-12-12
EP0736614A2 (en) 1996-10-09
EP0736614A3 (en) 1996-10-23

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000