KR960031342A - 발열적으로 제조된 이산화규소를 기본으로 하는 입상체, 이의 제조방법 및 이의 용도 - Google Patents

발열적으로 제조된 이산화규소를 기본으로 하는 입상체, 이의 제조방법 및 이의 용도 Download PDF

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KR960031342A
KR960031342A KR1019960002501A KR19960002501A KR960031342A KR 960031342 A KR960031342 A KR 960031342A KR 1019960002501 A KR1019960002501 A KR 1019960002501A KR 19960002501 A KR19960002501 A KR 19960002501A KR 960031342 A KR960031342 A KR 960031342A
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silicon dioxide
pyrogenically produced
produced silicon
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델러 클라우스
크라우제 헬름프리트
마이어 위르겐
케르너 디터
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볼프강 메르크 · 볼프강 베버
데구사 아크티엔게젤샤프트
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    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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  • Chemical & Material Sciences (AREA)
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Abstract

본 발명은 이산화규소를 기본으로 하며 하기 특성을 가진 입상체에 관한 것이다.
평균 입자 크기 : 10 내지 120㎛, BET 표면적 : 40 내지 400 ㎡/g, 공극 용적 : 0.5 내지 2.5㎖/g, 공극 크기 분포 : 총 공극 용적의 5% 미만은 직경이 5nm 미만인 공극으로 존재하며, 나머지는 중공극 및 거대공극으로 존재한다. pH 값 : 3.6 내지 8.5, 탭 밀도 : 220 내지 700g/ℓ
상기 입상체는 이산화규소를 수중에 분산시키고, 이를 분무건조한 후, 임의로 가열하고/하거나 실란화하여 제조한다.
상기 입상체는 촉매 지지체로서 사용된다.

Description

발열적으로 제조된 이산화규소를 기본으로 하는 입상체, 이의 제조방법 및 이의 용도
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실시예 1 내지 4에서 수득한 이산화규소 지지체의 입자 크기 분포를 나타내는 도이다.

Claims (9)

  1. 발열적으로 제조된 이산화규소를 기본으로 하며 하기의 물리화학적 특성을 가진 입상체. 평균 입자 크기 : 10 내지 120㎛, BET 표면적 : 40 내지 400㎡/g, 공극 용적 : 0.5 내지 2.5㎖/g, 공극 크기 분포 : 총 공극 용적의 5% 미만인 직경이 5nm 미만인 공극으로 존재하며, 나머지는 중공극 및 거대공극으로 존재한다. pH 값 : 3.6 내지 8.5, 탭 밀도 : 220 내지 700g/ℓ
  2. 발열적으로 제조된 이산화규소를 수중에 분산시키고 이를 분무 건조시킨 후 수득된 과립을 150 내지 1,100℃의 온도에서 1 내지 8시간동안 가열함을 특징으로 하는, 제1항에 따른 입상체의 제조방법.
  3. 발열적으로 제조된 이산화규소를 기본으로 하며 하기의 물리화학적 특성을 가진 입상체. 평균 입자 크기 : 10 내지 120㎛, BET 표면적 : 40 내지 400㎡/g, 공극 용적 : 0.5 내지 2.5㎖/g, 공극 크기 분포 : 총 공극 용적의 5% 미만은 직경이 5nm 미만인 공극으로 존재하며, 나머지는 중공극 및 거대공극으로 존재한다. pH 값 : 3.6 내지 8.5, 탭 밀도 : 220 내지 700g/ℓ
  4. 발열적으로 제조된 이산화규소를 수중에 분산시키고 이를 분무 건조시킨 후 수득된 입상체를 실란화시킴을 특징으로 하는, 제3항에 따른 입상체의 제조방법.
  5. 발열적으로 제조된 이산화규소를 기본으로 하며 하기의 물리화학적 특성을 가진 입상체. 평균 입자 크기 : 10 내지 120㎛, BET 표면적 : 40 내지 ㎡/g, 공극 용적 : 0.5 내지 2.5㎖/g, 공극 크기 분포 : 총 공극 용적의 5% 미만은 직경이 5nm 미만인 공극으로 존재하며, 나머지는 중공극 및 거대공극으로 존재한다. pH 값 : 3.6 내지 8.5, 탭 밀도 : 220 내지 700g/ℓ
  6. 발열적으로 제조된 이산화규소를 수중에 분산시키고 이를 분무 건조시킨 후 수득된 입상체를 임의로 150 내지 1,100℃의 온도에서 1 내지 8시간동안 가열시킨 다음 연속해서 실란화시킴을 특징으로 하는, 제5항에 따른 입상체의 제조방법.
  7. 발열적으로 제조된 이산화규소, 바람직하게는 화염가수분해에 의해 사염화규소로부터 제조한 이산화규소를 수중에 분산시키고, 이를 분무건조시킨 후, 수득된 입상체를 임의로 150 내지 1,100℃의 온도에서 1 내지 8시간동안 가열시키고/시키거나 실린화시킴을 특징으로 하는, 제1항, 제3항, 및 제5항 중 어느 한 항에 따른, 발열적으로 제조한 이산화규소를 기본으로 하는 입상체의 제조방법.
  8. 촉매 지지체, 특히 중합반응을 촉매의 제조를 위한, 제1항, 제3항 및 제5항 중 어느 한 항에 따른 입상체의 용도.
  9. 폴리에틸렌 제조용 촉매를 제조하기 위한 촉매 지지체로서의, 제1항, 제3항 및 제5항 중 어느 한항에 따른 입상체의 용도.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960002501A 1995-02-04 1996-02-02 발열적으로 제조된 이산화규소를 기본으로 하는 입상체, 이의 제조방법 및 이의 용도(Granules based on pyrogenically prepared silicon dioxide, method for their preparation and use thereof) KR100190472B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19503717.0 1995-02-04
DE19503717 1995-02-04
DE195.3717.0 1995-02-04
DE19601415A DE19601415A1 (de) 1995-02-04 1996-01-17 Granulate auf Basis von pyrogen hergestelltem Siliciumdioxid, Verfahren zu ihrer Herstellung und ihre Verwendung
DE19601415.8 1996-01-17

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KR100190472B1 KR100190472B1 (ko) 1999-06-01

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DE19936478A1 (de) * 1999-08-03 2001-02-15 Degussa Sinterwerkstoffe
DE10109484A1 (de) * 2001-02-28 2002-09-12 Degussa Oberflächenmodifizierte, dotierte, pyrogen hergestellte Oxide
DE10114484C2 (de) * 2001-03-24 2003-10-16 Heraeus Quarzglas Verfahren für die Herstellung eines Komposit-Werkstoffs mit einem SiO¶2¶-Gehalt von mindestens 99 Gew.-%, und Verwendung des nach dem Verfahren erhaltenen Komposit-Werkstoffs
DE10145162A1 (de) * 2001-09-13 2003-04-10 Wacker Chemie Gmbh Kieselsäure mit geringem Gehalt an Kieselsäure-Silanolgruppen
EP1308422A1 (en) 2001-10-30 2003-05-07 Degussa AG A method of producing glass of optical qualitiy
EP1700830A1 (en) 2005-03-09 2006-09-13 Novara Technology S.R.L. Process for the production of monoliths by means of the invert sol-gel process
EP1700828A1 (en) 2005-03-09 2006-09-13 Degussa AG Method for producing ultra-high purity, optical quality, glass articles
SI1700831T1 (sl) 2005-03-09 2008-04-30 Gegussa Novara Technology Spa Postopek za proizvodnjo monolitov s pomocjo sol-gel postopka
EP1700832A1 (en) 2005-03-09 2006-09-13 Degussa AG A method of producing glass of optical quality
DE102005061965A1 (de) 2005-12-23 2007-07-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Oxidische Agglomeratpartikel, Verfahren zur Herstellung von Nanokompositen sowie deren Verwendung
EP2011769A1 (de) 2007-07-06 2009-01-07 Evonik Degussa GmbH Gesintertes, hochreines Siliciumdioxid enthaltendes Granulat
DE102007031633A1 (de) 2007-07-06 2009-01-08 Evonik Degussa Gmbh Verfahren zur Herstellung von hochreinem Siliciumdioxidgranulat
DE102007049158A1 (de) 2007-10-13 2009-04-16 Evonik Degussa Gmbh Verwendung von Kieselglasgranulaten
EP2088128B1 (en) 2007-12-10 2015-04-08 Cristal Materials Corporation Method for the production of glassy monoliths via the sol-gel process
JP5624361B2 (ja) * 2009-08-07 2014-11-12 パナソニック株式会社 メソポーラスシリカ微粒子の製造方法、メソポーラスシリカ微粒子、メソポーラスシリカ微粒子分散液、メソポーラスシリカ微粒子含有組成物、及びメソポーラスシリカ微粒子含有成型物
DE102011004532A1 (de) 2011-02-22 2012-08-23 Evonik Degussa Gmbh Hochreines Siliciumdioxidgranulat für Quarzglasanwendungen
DE102011087385A1 (de) 2011-11-30 2013-06-06 Evonik Degussa Gmbh Granulate auf der Basis von Titandioxid-Partikeln mit hoher mechanischer Stabilität

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DE3611449A1 (de) * 1986-04-05 1987-10-15 Degussa Grundstoff zur herstellung von keramischen werkstoffen

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