KR960030980A - 삼불화질소 희석물에 의한 열세정 방법 - Google Patents
삼불화질소 희석물에 의한 열세정 방법 Download PDFInfo
- Publication number
- KR960030980A KR960030980A KR1019960003557A KR19960003557A KR960030980A KR 960030980 A KR960030980 A KR 960030980A KR 1019960003557 A KR1019960003557 A KR 1019960003557A KR 19960003557 A KR19960003557 A KR 19960003557A KR 960030980 A KR960030980 A KR 960030980A
- Authority
- KR
- South Korea
- Prior art keywords
- waste
- nitrogen trifluoride
- zone
- cleaning
- cooling trap
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims abstract 17
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 title claims 9
- 238000010790 dilution Methods 0.000 title claims 2
- 239000012895 dilution Substances 0.000 title claims 2
- 239000000463 material Substances 0.000 claims abstract 5
- 238000004519 manufacturing process Methods 0.000 claims abstract 3
- 239000003085 diluting agent Substances 0.000 claims abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract 2
- 238000001816 cooling Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- 239000002699 waste material Substances 0.000 claims 10
- 239000011261 inert gas Substances 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000003153 chemical reaction reagent Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical class FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Weting (AREA)
Abstract
본 발명은 고온, 일반적으로 공정 작업 온도에서 열 활성화된 삼불화질소 희석물로 반도체 제조 장치 및 특히 석영 재료를 동력학적으로 세정하는 방법에 관한 것이며, 이때 세정 배출액은 안전하게 제거되고 세정 부산물은 분리 또는 희석되어 효율적인 세정을 제공하고 세정된 제조 장치는 신속하게 재개시킬 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 냉각 트랩 및 진공 벤츄리를 사용하는 본 발명의 세정 장치의 제1양태의 개요도.
제2도는 제1도에 도시한 본 발명의 세정장치의 제1양태에 있어서, 기계식 진공 펌프를 사용하여 진공을 거는 또 다른 양태를 도시한 부분 개요도.
제3도는 제1도에 도시한 본 발명의 세정 장치에 있어서, 냉각 트랩을 사용하지 않고 가열된 기체를 진공 벤츄리에 사용하는 바람랍직한 양태의 부분 개요도.
Claims (14)
- 삼불화질소 희석물을 사용하여 반도체 제조시에 재료 및/또는 장치의 표면을 세정하는 하기 (a) 내지 (e) 단계를 포함하는 방법 : (a) 상기 재료 및/또는 장치의 표면이 접하는 구역(zone)을 일치 배기시키는 단계 ; (b) 상기 구역을 삼불화질소를 해리시키기에 충분한 고온으로 유지시키는 단계 ; (c) 상기 구역을 통해 삼불화질소와 불활성 기체의 혼합물(이 혼합물의 삼불화질소 : 불활성 기체의 비가 약 2% : 98% 내지 70% : 30% 범위이고, 상기 불활성 기체가 질소, 아르곤, 헬륨 및 이의 혼합물로 구성된 군에서 선택됨)을 유입시키는 단계 ; (d) 상기 삼불화질소 및/또는 삼불화질소에서 해리된 불소 세정 시약과 화학 반응시켜 휘발성 반응 생성물을 형성시킴으로써 상기 재료 및/또는 장치의 표면상에 있는 바람직하지 않은 물질을 세정하는 단계 ; 및 (e) 상기 구역을 2차 배기시키므로서 이 구역에서 상기 폐기물인 휘발성 반응 생성물, 임의의 잔류 삼불화질소 및 불활성 기체를 제거하는 단계(이때 상기 폐기물은 가열된 배기 도관을 통해 배기됨).
- 제1항에 있어서, 단계 (b)의 고온 범위가 약 550℃ 내지 1000℃인 방법.
- 제1항에 있어서, 단계 (b)의 고온 범위가 약 600℃ 내지 900℃인 방법.
- 제1항에 있어서, 단계 (b)의 고온 범위가 약 620℃ 내지 850℃인 방법.
- 제1항에 있어서, 폐기물을 가압 기체 진공 벤츄리를 사용하여 배기시키는 방법.
- 제5항에 있어서, 가압 기체를 가열한 후 진공 벤츄리에 통과시키는 방법.
- 제1항에 있어서, 폐기물 기계식 진공 펌프를 사용하여 배기시키는 방법.
- 제1항에 있어서, 폐기물을 냉각 트랩으로 배기시켜 상기 폐기물을 이 냉각 트랩안에 포획하는 방법.
- 제8항에 있어서, 냉각 트랩을 상기 구역에서 연속적으로 분리시키고, 이 냉각 트랩을 다시 배기시켜 폐기용 냉각 트랩에서 폐기물을 제거하는 방법.
- 제5항에 있어서, 폐기물을 가압 기체로 희석시키는 방법.
- 제1항에 있어서, 폐기물을 세척하고 배출시키는 방법.
- 제5항에 있어서, 가압 기체가 질소, 아르곤, 헬륨 및 이의 혼합물로 구성된 군에서 선택되는 방법.
- 제1항에 있어서, 상기 구역을 2차 배기시킨 후 불활성 기체로 퍼지(purge)하는 방법.
- 제1항에 있어서, 일차 배기를 200토르 이하의 압력에서 실시하고, 삼불화질소 희석물의 유동은 750토르 이하의 압력에서 실시하고, 가열은 620 내지 850℃에서 실시하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/390,716 US5714011A (en) | 1995-02-17 | 1995-02-17 | Diluted nitrogen trifluoride thermal cleaning process |
US8/390,716 | 1995-02-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960030980A true KR960030980A (ko) | 1996-09-17 |
Family
ID=23543624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960003557A KR960030980A (ko) | 1995-02-17 | 1996-02-14 | 삼불화질소 희석물에 의한 열세정 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5714011A (ko) |
EP (1) | EP0731497A3 (ko) |
JP (1) | JPH08255778A (ko) |
KR (1) | KR960030980A (ko) |
TW (1) | TW332321B (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5817575A (en) * | 1996-01-30 | 1998-10-06 | Advanced Micro Devices, Inc. | Prevention of clogging in CVD apparatus |
US5861065A (en) * | 1997-01-21 | 1999-01-19 | Air Products And Chemicals, Inc. | Nitrogen trifluoride-oxygen thermal cleaning process |
US5868852A (en) * | 1997-02-18 | 1999-02-09 | Air Products And Chemicals, Inc. | Partial clean fluorine thermal cleaning process |
WO1999006611A1 (en) * | 1997-08-01 | 1999-02-11 | Applied Komatsu Technology, Inc. | Method and apparatus for chamber cleaning |
AU4548999A (en) * | 1998-06-08 | 1999-12-30 | Advanced Delivery & Chemical Systems, Ltd. | Chemical delivery system having purge system utilizing multiple purge techniques |
JP4730572B2 (ja) * | 2000-08-21 | 2011-07-20 | 株式会社アルバック | プラズマ成膜装置及びそのクリーニング方法 |
US6585830B2 (en) * | 2000-11-30 | 2003-07-01 | Agere Systems Inc. | Method for cleaning tungsten from deposition wall chambers |
US20030216041A1 (en) * | 2002-05-08 | 2003-11-20 | Herring Robert B. | In-situ thermal chamber cleaning |
US6818566B2 (en) | 2002-10-18 | 2004-11-16 | The Boc Group, Inc. | Thermal activation of fluorine for use in a semiconductor chamber |
US6897162B2 (en) * | 2003-10-20 | 2005-05-24 | Wafermasters, Inc. | Integrated ashing and implant annealing method |
US20050252529A1 (en) * | 2004-05-12 | 2005-11-17 | Ridgeway Robert G | Low temperature CVD chamber cleaning using dilute NF3 |
US20080142046A1 (en) * | 2006-12-13 | 2008-06-19 | Andrew David Johnson | Thermal F2 etch process for cleaning CVD chambers |
US20090041925A1 (en) * | 2007-06-13 | 2009-02-12 | Advanced Refurbishment Technologies Llc | System and Method for Endpoint Detection of a Process in a Chamber |
JP6196925B2 (ja) * | 2014-03-26 | 2017-09-13 | 東京エレクトロン株式会社 | 薄膜形成装置の立ち上げ方法、及び、薄膜形成装置 |
JP6371738B2 (ja) * | 2015-05-28 | 2018-08-08 | 株式会社東芝 | 成膜装置 |
US20220331846A1 (en) * | 2021-04-16 | 2022-10-20 | BWXT Isotope Technology Group, Inc. | Clean-in-place and product recovery method |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4488506A (en) * | 1981-06-18 | 1984-12-18 | Itt Industries, Inc. | Metallization plant |
JPS60198394A (ja) * | 1984-03-21 | 1985-10-07 | Anelva Corp | 真空処理装置の排気装置 |
GB2183204A (en) * | 1985-11-22 | 1987-06-03 | Advanced Semiconductor Mat | Nitrogen trifluoride as an in-situ cleaning agent |
FR2616884B1 (fr) * | 1987-06-19 | 1991-05-10 | Air Liquide | Procede de traitement d'effluents gazeux provenant de la fabrication de composants electroniques et appareil d'incineration pour sa mise en oeuvre |
JPH01306580A (ja) * | 1988-06-01 | 1989-12-11 | Mitsubishi Electric Corp | エツチング装置 |
JP3004696B2 (ja) * | 1989-08-25 | 2000-01-31 | アプライド マテリアルズ インコーポレーテッド | 化学的蒸着装置の洗浄方法 |
JP3140068B2 (ja) * | 1991-01-31 | 2001-03-05 | 東京エレクトロン株式会社 | クリーニング方法 |
JP2618817B2 (ja) * | 1993-07-09 | 1997-06-11 | 岩谷産業株式会社 | 半導体製造装置でのノンプラズマクリーニング方法 |
TW241375B (ko) * | 1993-07-26 | 1995-02-21 | Air Prod & Chem | |
US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
-
1995
- 1995-02-17 US US08/390,716 patent/US5714011A/en not_active Expired - Lifetime
-
1996
- 1996-02-12 EP EP96101984A patent/EP0731497A3/en not_active Ceased
- 1996-02-14 KR KR1019960003557A patent/KR960030980A/ko not_active Application Discontinuation
- 1996-02-15 TW TW085100659A patent/TW332321B/zh active
- 1996-02-19 JP JP8055505A patent/JPH08255778A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5714011A (en) | 1998-02-03 |
JPH08255778A (ja) | 1996-10-01 |
EP0731497A3 (en) | 1996-12-27 |
TW332321B (en) | 1998-05-21 |
EP0731497A2 (en) | 1996-09-11 |
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Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |