KR960026991A - 광 결합소자 - Google Patents

광 결합소자 Download PDF

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Publication number
KR960026991A
KR960026991A KR1019950072258A KR19950072258A KR960026991A KR 960026991 A KR960026991 A KR 960026991A KR 1019950072258 A KR1019950072258 A KR 1019950072258A KR 19950072258 A KR19950072258 A KR 19950072258A KR 960026991 A KR960026991 A KR 960026991A
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KR
South Korea
Prior art keywords
light emitting
light
output side
input side
receiving
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KR1019950072258A
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English (en)
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KR100218586B1 (ko
Inventor
아츠시 무라야마
마사토시 코타케
카즈야 우에카와
Original Assignee
쯔지 하루오
샤프 가부시끼가이샤
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Publication of KR960026991A publication Critical patent/KR960026991A/ko
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Publication of KR100218586B1 publication Critical patent/KR100218586B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Optical Communication System (AREA)
  • Protection Of Static Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

본 발명의 광결합소자는 입력측과 출력측으로 구성되어 있다. 입력측은 발광소자를 포함하여, 출력측은 구동용소자, 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자; 및 상기 수광소자에 직렬로 연결되고 정 또는 부의 온도계수를 갖는 저항소자를 포함한다. 상술한 구성에 의하여, 본 광결합소자 자체는 돌입전류의 발생을 방지하며 과전류로 인한 과열로부터 소자 자체를 보호하도록 구성된다.

Description

광 결합소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명에 의한 광결합소자의 제1실시예를 나타낸 구성도, 제7도는 본 발명에 의한 광결합소자의 제2실시예를 나타낸 구성도.

Claims (5)

  1. 입력측 및 출력측을 포함하며, 상기 입력측은 발광소자를 포함하고, 상기 출력측은 구동용소자; 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자; 및 상기 수광소자에 직렬로 연결되고 정 또는 부의 온도계수를 갖는 저항소자를 포함하는 광결합소자.
  2. 입력측 및 출력측을 포함하며, 상기 입력측은 발광소자; 및 상기 발광소자에 병렬로 연결되고 정의 온도계수를 갖는 저항소자를 포함하고, 상기 출력측은 구동용소자; 및 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자를 포함하는 광결합소자.
  3. 입력측 및 출력측을 포함하며, 상기 입력측은 발광소자; 및 상기 발광소자에 병렬로 연결되고 부의 온도계수를 갖는 저항소자를 포함하고, 상기 출력측은 구동용소자; 및 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자를 포함하는 광결합소자.
  4. 입력측 및 출력측을 포함하며, 상기 입력측은 발광소자; 및 상기 발광소자에 병렬로 연결된 복수의 실리콘 다이오드를 포함하고, 상기 출력측은 구동용소자; 및 상기 발광소자로부터의 광을 수신하고 상기 구동용소자를 점호(ignite)시키는 수광소자를 포함하는 광결합소자.
  5. 입력측 및 출력측을 포함하며, 상기 입력측은 발광소자를 포함하고, 상기 출력측은 구동용소자; 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자; 상기 수광소자에 직렬로 연결된 사이리스터; 및 상기 사이리스터를 ON시키기 위하여 부의 온도계수를 갖는 저항소자를 포함하는 광결합소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950072258A 1994-12-28 1995-12-27 광결합소자 KR100218586B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-328771 1994-12-28
JP32877194A JP2986698B2 (ja) 1994-12-28 1994-12-28 光結合素子

Publications (2)

Publication Number Publication Date
KR960026991A true KR960026991A (ko) 1996-07-22
KR100218586B1 KR100218586B1 (ko) 1999-09-01

Family

ID=18213961

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950072258A KR100218586B1 (ko) 1994-12-28 1995-12-27 광결합소자

Country Status (5)

Country Link
US (1) US5708277A (ko)
EP (2) EP0720239B1 (ko)
JP (1) JP2986698B2 (ko)
KR (1) KR100218586B1 (ko)
DE (2) DE69535567T2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3565322B2 (ja) 1999-10-15 2004-09-15 シャープ株式会社 光結合素子
US7129653B2 (en) * 2004-09-30 2006-10-31 Hubbell Incorporated Self-contained, self-snubbed, HID dimming module that exhibits non-zero crossing detection switching
JP2006196598A (ja) * 2005-01-12 2006-07-27 Sharp Corp ソリッドステートリレー、電子機器及びソリッドステートリレーの製造方法
US7679223B2 (en) 2005-05-13 2010-03-16 Cree, Inc. Optically triggered wide bandgap bipolar power switching devices and circuits
CN101365929A (zh) * 2006-01-09 2009-02-11 皇家飞利浦电子股份有限公司 具有集成的温度传感器功能的光传感器
KR100763863B1 (ko) * 2006-11-06 2007-10-05 한국 고덴시 주식회사 포토 트라이악의 구조
DE102008057347A1 (de) * 2008-11-14 2010-05-20 Osram Opto Semiconductors Gmbh Optoelektronische Vorrichtung
US20100327194A1 (en) * 2009-06-26 2010-12-30 Jian Xu Multi-bit use of a standard optocoupler
JP7374948B2 (ja) 2021-03-23 2023-11-07 株式会社東芝 半導体リレー装置

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US4121122A (en) * 1976-12-22 1978-10-17 Kurt Pokrandt Current sensing circuitry
US4143287A (en) * 1977-09-19 1979-03-06 Bell Telephone Laboratories, Incorporated Photo coupling line isolation circuit
JPS54125912A (en) * 1978-03-24 1979-09-29 Toshiba Corp Photo thyristor coupler circuit
US4361798A (en) * 1980-10-27 1982-11-30 Pitney Bowes Inc. System for extending the voltage range of a phase-fired triac controller
GB2099978A (en) * 1981-05-11 1982-12-15 Rolls Royce Gas turbine engine combustor
JPS58101477A (ja) * 1981-12-11 1983-06-16 Sanyo Electric Co Ltd 自己保持型光結合器
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
FR2569915B3 (fr) * 1984-08-28 1986-09-05 Baudry Jean Perfectionnement aux variateurs electroniques fonctionnant par controle de phase
JPS622717A (ja) * 1985-06-28 1987-01-08 Hayashibara Takeshi 突入電流制限回路
US5216303A (en) * 1991-08-06 1993-06-01 Lu Chao Cheng Double solid state relay
JP2807388B2 (ja) * 1993-03-19 1998-10-08 株式会社東芝 フォトカプラ装置
JP2812874B2 (ja) * 1994-04-25 1998-10-22 シャープ株式会社 光結合素子

Also Published As

Publication number Publication date
US5708277A (en) 1998-01-13
JP2986698B2 (ja) 1999-12-06
DE69535567D1 (de) 2007-09-27
EP0720239A3 (en) 1997-11-26
EP0720239B1 (en) 2006-06-28
EP1406312A3 (en) 2005-06-15
EP1406312A2 (en) 2004-04-07
EP0720239A2 (en) 1996-07-03
EP1406312B1 (en) 2007-08-15
DE69535090T2 (de) 2007-01-04
DE69535090D1 (de) 2006-08-10
JPH08186285A (ja) 1996-07-16
KR100218586B1 (ko) 1999-09-01
DE69535567T2 (de) 2008-05-08

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