KR960026991A - Optical coupling element - Google Patents

Optical coupling element Download PDF

Info

Publication number
KR960026991A
KR960026991A KR1019950072258A KR19950072258A KR960026991A KR 960026991 A KR960026991 A KR 960026991A KR 1019950072258 A KR1019950072258 A KR 1019950072258A KR 19950072258 A KR19950072258 A KR 19950072258A KR 960026991 A KR960026991 A KR 960026991A
Authority
KR
South Korea
Prior art keywords
light emitting
light
output side
input side
receiving
Prior art date
Application number
KR1019950072258A
Other languages
Korean (ko)
Other versions
KR100218586B1 (en
Inventor
아츠시 무라야마
마사토시 코타케
카즈야 우에카와
Original Assignee
쯔지 하루오
샤프 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쯔지 하루오, 샤프 가부시끼가이샤 filed Critical 쯔지 하루오
Publication of KR960026991A publication Critical patent/KR960026991A/en
Application granted granted Critical
Publication of KR100218586B1 publication Critical patent/KR100218586B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Optical Communication System (AREA)
  • Protection Of Static Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

본 발명의 광결합소자는 입력측과 출력측으로 구성되어 있다. 입력측은 발광소자를 포함하여, 출력측은 구동용소자, 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자; 및 상기 수광소자에 직렬로 연결되고 정 또는 부의 온도계수를 갖는 저항소자를 포함한다. 상술한 구성에 의하여, 본 광결합소자 자체는 돌입전류의 발생을 방지하며 과전류로 인한 과열로부터 소자 자체를 보호하도록 구성된다.The optical coupling element of the present invention is composed of an input side and an output side. An input side includes a light emitting element, and an output side includes a driving element, a light receiving element for receiving light from the light emitting element and turning on the driving element; And a resistance element connected in series with the light receiving element and having a positive or negative temperature coefficient. By the above-described configuration, the present optical coupling element itself is configured to prevent generation of inrush current and to protect the element itself from overheating due to overcurrent.

Description

광 결합소자Optical coupling element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제6도는 본 발명에 의한 광결합소자의 제1실시예를 나타낸 구성도, 제7도는 본 발명에 의한 광결합소자의 제2실시예를 나타낸 구성도.6 is a block diagram showing a first embodiment of the optical coupling device according to the present invention, Figure 7 is a block diagram showing a second embodiment of the optical coupling device according to the present invention.

Claims (5)

입력측 및 출력측을 포함하며, 상기 입력측은 발광소자를 포함하고, 상기 출력측은 구동용소자; 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자; 및 상기 수광소자에 직렬로 연결되고 정 또는 부의 온도계수를 갖는 저항소자를 포함하는 광결합소자.An input side and an output side, wherein the input side comprises a light emitting element, and the output side comprises a driving element; A light receiving element for receiving light from the light emitting element and turning on the driving element; And a resistance element connected in series with the light receiving element and having a positive or negative temperature coefficient. 입력측 및 출력측을 포함하며, 상기 입력측은 발광소자; 및 상기 발광소자에 병렬로 연결되고 정의 온도계수를 갖는 저항소자를 포함하고, 상기 출력측은 구동용소자; 및 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자를 포함하는 광결합소자.An input side and an output side, the input side comprising: a light emitting element; And a resistance element connected in parallel with the light emitting element and having a positive temperature coefficient, wherein the output side comprises a driving element; And a light receiving element for receiving light from the light emitting element and turning on the driving element. 입력측 및 출력측을 포함하며, 상기 입력측은 발광소자; 및 상기 발광소자에 병렬로 연결되고 부의 온도계수를 갖는 저항소자를 포함하고, 상기 출력측은 구동용소자; 및 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자를 포함하는 광결합소자.An input side and an output side, the input side comprising: a light emitting element; And a resistance element connected in parallel with the light emitting element and having a negative temperature coefficient, wherein the output side comprises a driving element; And a light receiving element for receiving light from the light emitting element and turning on the driving element. 입력측 및 출력측을 포함하며, 상기 입력측은 발광소자; 및 상기 발광소자에 병렬로 연결된 복수의 실리콘 다이오드를 포함하고, 상기 출력측은 구동용소자; 및 상기 발광소자로부터의 광을 수신하고 상기 구동용소자를 점호(ignite)시키는 수광소자를 포함하는 광결합소자.An input side and an output side, the input side comprising: a light emitting element; And a plurality of silicon diodes connected in parallel to the light emitting device, wherein the output side comprises a driving device; And a light receiving device receiving light from the light emitting device and ignite the driving device. 입력측 및 출력측을 포함하며, 상기 입력측은 발광소자를 포함하고, 상기 출력측은 구동용소자; 상기 발광소자로부터의 광을 수신하여 상기 구동용소자를 ON시키기 위한 수광소자; 상기 수광소자에 직렬로 연결된 사이리스터; 및 상기 사이리스터를 ON시키기 위하여 부의 온도계수를 갖는 저항소자를 포함하는 광결합소자.An input side and an output side, wherein the input side comprises a light emitting element, and the output side comprises a driving element; A light receiving element for receiving light from the light emitting element and turning on the driving element; A thyristor connected in series with the light receiving element; And a resistance element having a negative temperature coefficient for turning on the thyristor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950072258A 1994-12-28 1995-12-27 Optically coupled device KR100218586B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32877194A JP2986698B2 (en) 1994-12-28 1994-12-28 Optical coupling device
JP94-328771 1994-12-28

Publications (2)

Publication Number Publication Date
KR960026991A true KR960026991A (en) 1996-07-22
KR100218586B1 KR100218586B1 (en) 1999-09-01

Family

ID=18213961

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950072258A KR100218586B1 (en) 1994-12-28 1995-12-27 Optically coupled device

Country Status (5)

Country Link
US (1) US5708277A (en)
EP (2) EP1406312B1 (en)
JP (1) JP2986698B2 (en)
KR (1) KR100218586B1 (en)
DE (2) DE69535090T2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3565322B2 (en) 1999-10-15 2004-09-15 シャープ株式会社 Optical coupling device
US7129653B2 (en) * 2004-09-30 2006-10-31 Hubbell Incorporated Self-contained, self-snubbed, HID dimming module that exhibits non-zero crossing detection switching
JP2006196598A (en) * 2005-01-12 2006-07-27 Sharp Corp Solid-state relay, electronic apparatus and method of manufacturing solid-state relay
US7679223B2 (en) 2005-05-13 2010-03-16 Cree, Inc. Optically triggered wide bandgap bipolar power switching devices and circuits
CN101365929A (en) * 2006-01-09 2009-02-11 皇家飞利浦电子股份有限公司 Light sensor with integrated temperature sensor functionality
KR100763863B1 (en) * 2006-11-06 2007-10-05 한국 고덴시 주식회사 Structure of photo-coupler
DE102008057347A1 (en) * 2008-11-14 2010-05-20 Osram Opto Semiconductors Gmbh Optoelectronic device
US20100327194A1 (en) * 2009-06-26 2010-12-30 Jian Xu Multi-bit use of a standard optocoupler
JP7374948B2 (en) 2021-03-23 2023-11-07 株式会社東芝 semiconductor relay device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3996475A (en) * 1975-07-28 1976-12-07 Rodriguez Edward T Photoelectric controlling
US4121122A (en) * 1976-12-22 1978-10-17 Kurt Pokrandt Current sensing circuitry
US4143287A (en) * 1977-09-19 1979-03-06 Bell Telephone Laboratories, Incorporated Photo coupling line isolation circuit
JPS54125912A (en) * 1978-03-24 1979-09-29 Toshiba Corp Photo thyristor coupler circuit
US4361798A (en) * 1980-10-27 1982-11-30 Pitney Bowes Inc. System for extending the voltage range of a phase-fired triac controller
GB2099978A (en) * 1981-05-11 1982-12-15 Rolls Royce Gas turbine engine combustor
JPS58101477A (en) * 1981-12-11 1983-06-16 Sanyo Electric Co Ltd Self-holding type photocoupler
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
FR2569915B3 (en) * 1984-08-28 1986-09-05 Baudry Jean IMPROVEMENT IN ELECTRONIC DRIVERS OPERATING BY PHASE CONTROL
JPS622717A (en) * 1985-06-28 1987-01-08 Hayashibara Takeshi Rush current limiting circuit
US5216303A (en) * 1991-08-06 1993-06-01 Lu Chao Cheng Double solid state relay
JP2807388B2 (en) * 1993-03-19 1998-10-08 株式会社東芝 Photo coupler device
JP2812874B2 (en) * 1994-04-25 1998-10-22 シャープ株式会社 Optical coupling device

Also Published As

Publication number Publication date
JPH08186285A (en) 1996-07-16
DE69535090T2 (en) 2007-01-04
EP0720239A2 (en) 1996-07-03
DE69535090D1 (en) 2006-08-10
US5708277A (en) 1998-01-13
EP1406312B1 (en) 2007-08-15
DE69535567T2 (en) 2008-05-08
EP1406312A3 (en) 2005-06-15
EP0720239B1 (en) 2006-06-28
DE69535567D1 (en) 2007-09-27
KR100218586B1 (en) 1999-09-01
EP1406312A2 (en) 2004-04-07
JP2986698B2 (en) 1999-12-06
EP0720239A3 (en) 1997-11-26

Similar Documents

Publication Publication Date Title
BR9107166A (en) CIRCUIT PROTECTION DEVICE
KR910019334A (en) Reference generator
KR890017743A (en) Operation display circuit of switch
KR950010050A (en) Overheat detection circuit
KR910015201A (en) Discharge lamp lighting device
KR960026991A (en) Optical coupling element
KR840008099A (en) Output circuit
KR910013720A (en) Overvoltage Protection Circuit
SE9501821D0 (en) Arrangements relating to light emitting devices
KR930007082A (en) Solid state relay
KR920007247A (en) Optical Coupling Detection Device
KR840005624A (en) Temperature Compensation Bias Circuit
ES2162002T3 (en) IGNITION SYSTEM FOR INTERNAL COMBUSTION MOTORS.
KR880003483A (en) Semiconductor switching circuit
KR860001514A (en) Charge generator control
KR970048481A (en) Abnormal temperature alarm circuit of semiconductor device tester
KR970053968A (en) ESD Protection Structure of Semiconductor Device with Multiple Power Supplies
GR920100034A (en) Flux monitor high light cut-off circuit.
KR880014440A (en) Current mirror
SE9404345D0 (en) Strombegrenzungsvorrichtung
KR920009033A (en) Discrete current source whose output decreases with increasing control voltage
SU1467660A2 (en) Current overload protection device for two-channel power source
KR930015133A (en) Integrated light emitting and light receiving element
KR900004223A (en) Neon trance protector
KR910008870A (en) Protection circuit of semiconductor chip

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080522

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee