KR100763863B1 - Structure of photo-coupler - Google Patents

Structure of photo-coupler Download PDF

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Publication number
KR100763863B1
KR100763863B1 KR1020060109146A KR20060109146A KR100763863B1 KR 100763863 B1 KR100763863 B1 KR 100763863B1 KR 1020060109146 A KR1020060109146 A KR 1020060109146A KR 20060109146 A KR20060109146 A KR 20060109146A KR 100763863 B1 KR100763863 B1 KR 100763863B1
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South Korea
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pin
molding part
light receiving
receiving chip
molding
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KR1020060109146A
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Korean (ko)
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최재완
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한국 고덴시 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Thyristors (AREA)

Abstract

A structure of a photo triac is provided to prevent the degradation of a breakdown voltage due to external contamination or moisture and the generation of interference due to noises, to obtain a high threshold voltage and a low leakage current by increasing the distance between pins of a light receiving portion. A structure of a photo triac includes a molding part(10), a first pin(11) protruded from a right side of one portion of the molding part, a second pin(12) protruded from the center of one portion of the molding part, a third pin(13) protruded from a left side of one portion of the molding part, a fourth pin(14) protruded from a left side of the other portion of the molding part, a sixth pin(16) protruded from a right side of the other portion of the molding part, a light emitting chip, and a light receiving chip. The sixth pin includes an extended portion in the molding part. The light emitting chip is mounted on the second pin. The light receiving chip(20) is attached to the extended portion of the sixth pin. The light receiving chip is insulated from the extended portion of the sixth pin.

Description

포토 트라이악의 구조{Structure of Photo-Coupler}Structure of Photo-Coupler

도 1은 종래의 포토 트라이악의 구조를 나타내는 시사도이다.1 is a perspective view showing the structure of a conventional phototriac.

도 2는 도 1의 B-B선 단면도이다. 2 is a cross-sectional view taken along the line B-B in FIG.

도 3은 도 1의 A-A선 단면도이다.3 is a cross-sectional view taken along the line A-A of FIG.

도 4는 본 발명의 바람직한 일 실시예에 따른 포토 트라이악의 구조를 나타내는 사시도이다.Figure 4 is a perspective view showing the structure of a photo triac according to an embodiment of the present invention.

도 5는 도 4의 C-C선 단면도이다.5 is a cross-sectional view taken along the line C-C of FIG.

도 6은 도 4의 D-D선 단면도이다.FIG. 6 is a cross-sectional view taken along the line D-D of FIG. 4.

(도면의 주요한 부호에 대한 설명)(Description of Major Symbols in the Drawing)

1: 포토 트라이악 10: 몰딩부1: Photo Triac 10: Molding part

11: 1번핀 12: 2번핀11: Pin 1 12: Pin 2

13: 3번핀 14: 4번핀13: pin 3 14: pin 4

16: 6번핀 16a: 확폭부16: pin 6 16a: widening

16b: 절곡부 17: 발광 다이오드16b: bend 17: light emitting diode

20: 수광칩 30: 절연성 접착체층20: light receiving chip 30: insulating adhesive layer

40: 와이어 L: 절연거리40: wire L: insulation distance

본 발명은 포토 트라이악의 구조에 관한 것으로서, 보다 상세하게는 수광부의 중간핀을 완전히 제거하고, 다른 한 핀의 내부 구조를 개량하여 절연특성을 향상시키고, 노이즈 현상을 방지할 수 있게 하는 포토 트라이악의 구조에 관한 것이다.The present invention relates to a structure of a photo triac, and more particularly, to a photo triac, which completely removes an intermediate pin of a light receiving unit, improves an internal structure of another pin, and improves insulation characteristics, and prevents a noise phenomenon. It's about structure.

일반적으로, 포토 트라이악은 몰딩부 내에 일측에 발광부가 형성되고, 타측에 수광부가 형성되며, 발광부로부터 몰딩부의 일 측면으로 세 개의 핀이 돌출되고 수광부로부터 몰딩부의 타 측면으로부터 세 개의 핀이 돌출된 형상을 가지는 소자이다. In general, a photo triac has a light emitting part formed on one side of the molding part, a light receiving part formed on the other side, three pins protrude from the light emitting part to one side of the molding part, and three pins protrude from the other side of the molding part from the light receiving part. It is an element having a shaped shape.

도 1 내지 도 3에 도시된 바와 같이, 종래의 포토 트라이악(100)은 절연재질인 몰딩부(110)와, 상기 몰딩부(110)의 일측면 우측으로 돌출되는 1번핀(111)과, 상기 몰딩부(110)의 일측면 중앙으로 돌출되는 2번핀(112)과, 상기 몰딩부(110)의 일측면 좌측으로 돌출되는 3번핀(113)이 형성되고, 상기 몰딩부(110)의 타측면 좌측으로 돌출되는 4번핀(114)과, 상기 몰딩부(110)의 타측면 중앙으로 돌출되는 5번핀(115)과 몰딩부(110)의 타측면 우측으로 돌출되는 6번핀(116)이 형성된다. As shown in FIGS. 1 to 3, the conventional photo triac 100 includes a molding part 110 that is an insulating material, a first pin 111 protruding to the right side of the molding part 110, and The second pin 112 protruding toward the center of one side of the molding part 110 and the third pin 113 protruding to the left side of the molding part 110 are formed, and the other of the molding part 110 is formed. Pin 4 protruding to the left side of the side, pin 5 protruding to the center of the other side of the molding portion 110 115 and pin 6 116 protruding to the right side of the other side of the molding 110 is formed do.

여기서 상기 4번핀(114), 5번핀(115) 및 6번핀(116)은 수광부를 구성하고, 상기 1번핀(111), 2번핀(112), 3번핀(113)은 발광부를 구성하며, 상기 5번핀(115)에는 몰딩부 내에 수광칩(120), 예를 들어 포토트라이악칩이 실장되고, 상기 2번핀(112)에는 몰딩부 내에 발광칩인 발광다이오드(117)가 실장되어 이루어지는 구성 이다. Wherein the fourth pin 114, the fifth pin 115, and the sixth pin 116 constitute a light receiving unit, and the first pin 111, the second pin 112, and the third pin 113 constitute a light emitting unit. On the fifth pin 115, a light receiving chip 120, for example, a phototriac chip, is mounted in a molding part, and the second pin 112 includes a light emitting diode 117, which is a light emitting chip, in a molding part.

여기서, 상기 수광칩(120)은 상기 5번핀(115)에 설치되는 것으로서, 이러한 상기 5번핀(115)은, 도 1 및 도 2에 도시된 바와 같이, 노이즈 등에 의한 항복 전합 저하와 누설 전류의 증가 등의 영향을 줄이기 위하여 일반적으로 상기 몰딩부(110)가 완성된 후, 상기 몰딩부(110)의 외부로 돌출된 상기 5번핀(115)의 일부를 물리적으로 절단한다.Here, the light receiving chip 120 is installed in the fifth pin 115, the fifth pin 115, as shown in Figs. 1 and 2, the breakdown of the breakdown current due to noise and leakage current In general, after the molding part 110 is completed in order to reduce the influence of the increase, a part of the fifth pin 115 protruding to the outside of the molding part 110 is physically cut.

또한, 상기 5번핀(115)에 설치되는 상기 수광칩(120)은 상기 5번핀(115)에 도포되는 도전성 접착제층(130)에 의해 접착되는 구성이다.In addition, the light receiving chip 120 installed on the fifth pin 115 is configured to be bonded by the conductive adhesive layer 130 applied to the fifth pin 115.

따라서, 상기 발광 다이오드(117)에서 발생된 광신호를 상기 수광칩(120)이 수신할 수 있고, 이렇게 수신된 광신호를 상기 4번핀(114)이나 6번핀(116)으로 출력할 수 있는 것이다.Accordingly, the light receiving chip 120 may receive the optical signal generated by the light emitting diode 117, and may output the received optical signal to the fourth pin 114 or the sixth pin 116. .

그러나, 이러한 종래의 포토 트라이악(100)의 구조는, 상기 5번핀(115)을 절단하는 별도의 5번핀 절단공정이 필요하고, 5번핀(115)을 절단할 때, 제품에 물리적인 스트레스가 가해져서 제품에 손상을 주거나, 상기 몰딩부(110)의 기밀성이 떨어지는 등 제품의 신뢰성이 크게 떨어지는 문제점이 있었다.However, the structure of the conventional photo triac 100 requires a separate pin 5 cutting process for cutting the pin 5 115, and when cutting pin 5 115, physical stress is applied to the product. There was a problem in that the damage to the product is applied, or the reliability of the product is greatly reduced, such as the airtightness of the molding unit 110 is inferior.

또한, 종래에는 상기 5번핀(115)을 절단하더라도 상기 몰딩부(110)의 외부로 상기 5번핀(115)의 일부가 남아 외부로 노출되기 때문에 상기 5번핀(115)과 상기 4번핀(114) 사이 및 상기 5번핀(115)과 상기 6번핀(116) 사이에 외부적인 오염이나 수분 등의 영향으로 절연전압이 저하되고, 노이즈에 대한 영향이 증대되어 서로 간섭현상이 일어나는 등 많은 문제점이 있었다.Further, in the related art, even though the fifth pin 115 is cut off, the fifth pin 115 and the fourth pin 114 are partially exposed to the outside because a part of the fifth pin 115 remains outside of the molding part 110. Insulation voltage is lowered due to external pollution or moisture between the pins 115 and the pins 116 and the pins 116 between the pins 115 and the pins 116.

또한, 도 3에 도시된 바와 같이, 종래에는 상기 5번핀(115)과 수광칩(120) 사이에 도전성 접착제층(130)이 도포되어 상기 5번핀(115)과 수광칩(120)이 전기적으로 쇼트되거나 절단된 상기 5번핀(115)의 외부로 노출된 부분을 통해 노이즈가 상기 수광칩으로 유입되어 오동작을 발생시키는 등의 문제점이 있었다.In addition, as shown in FIG. 3, the conductive adhesive layer 130 is applied between the fifth pin 115 and the light receiving chip 120 to electrically connect the fifth pin 115 and the light receiving chip 120 to each other. There is a problem that noise is introduced into the light-receiving chip through a portion exposed to the outside of the fifth pin 115 that is shorted or cut, causing a malfunction.

상기와 같은 문제점을 해결하기 위한 본 발명의 목적은, 기존의 5번핀을 제거하고 6번핀에 수광칩을 실장하여 5번핀 절단공정이 불필요하여 핀에 물리적인 스트레스를 주지 않아서 제품의 신뢰성을 향상시킬 수 있으며, 4번핀과 6번핀 사이의 절연거리가 넓어져서 외부적인 오염이나 수분 등의 영향으로 절연전압이 저하되거나 노이즈에 대한 영향이 증대되어 발생되는 간섭현상을 방지할 수 있고, 6번핀과 수광칩 사이에 절연성 접착제층이 도포되어 6번핀과 수광칩 사이의 전기적으로 쇼트나 노이즈 유입을 방지할 수 있으며, 높은 항복전압과 낮은 누설전류를 만족할 수 있게 하는 포토 트라이악의 구조를 제공함에 있다.An object of the present invention for solving the above problems, eliminating the existing pin 5 and mounting the light-receiving chip on the pin 6 is not necessary to cut the pin 5 to improve the reliability of the product without the physical stress on the pin The insulation distance between pins 4 and 6 is widened to prevent interference caused by the insulation voltage being lowered or the effect of noise is increased due to external pollution or moisture. An insulating adhesive layer is applied between the chips to prevent electrical shorts or noise flow between the pin 6 and the light-receiving chip, and to provide a structure of a photo triac that satisfies high breakdown voltage and low leakage current.

상기 목적을 달성하기 위한 본 발명의 포토 트라이악의 구조는,The structure of the photo triac of the present invention for achieving the above object,

몰딩부; 상기 몰딩부의 일측면 우측으로 돌출되는 1번핀; 상기 몰딩부의 일측면 중앙으로 돌출되는 2번핀; 상기 몰딩부의 일측면 좌측으로 돌출되는 3번핀; 상기 몰딩부의 타측면 좌측으로 돌출되는 4번핀; 상기 몰딩부의 타측면 우측으로 돌출되고, 상기 몰딩부의 내부에 확폭부가 형성되는 6번핀; 상기 6번핀의 확폭부에 절연되어 실장되는 수광칩; 및 상기 2번핀에 실장되는 발광용 칩;을 포함하여 이루 어지는 것을 특징으로 한다.Molding part; Pin 1 protruding to the right side of the molding unit; Pin 2 protruding toward the center of one side of the molding part; A pin 3 protruding to the left side of one side of the molding part; Pin 4 protruding to the left side of the other side of the molding part; A sixth pin protruding to the right of the other side of the molding part and having a widening part formed in the molding part; A light receiving chip insulated from the wide part of the pin 6 and mounted thereon; And a light emitting chip mounted on the second pin.

본 발명에 따르면, 상기 수광칩과 6번핀의 확폭부 사이에 절연성 접착제층이 도포되는 것이 바람직하다. According to the present invention, it is preferable that an insulating adhesive layer is applied between the light receiving chip and the widening portion of the sixth pin.

또한, 본 발명에 따르면, 상기 수광칩의 전극과, 상기 4번핀, 및 상기 수광칩의 전극과 상기 6번핀은 서로 와이어 본딩되는 것이 바람직하다.In addition, according to the present invention, the electrode of the light receiving chip, the pin 4, and the electrode and the pin 6 of the light receiving chip are preferably wire bonded to each other.

또한, 본 발명에 따르면, 상기 확폭부는, 상기 6번핀의 절곡부에 의해 연결되어 상기 몰딩부의 중앙에 위치하는 것이 바람직하다.In addition, according to the present invention, it is preferable that the widening portion is connected to the bent portion of the sixth pin and positioned at the center of the molding portion.

본 발명의 구체적 특징 및 이점은 첨부된 도면을 참조한 이하의 설명으로 더욱 명확해 질 것이다.Specific features and advantages of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings.

즉, 이하 본 발명의 바람직한 일 실시예에 따른 포토 트라이악의 구조를 도면을 참조하여 상세히 설명한다.That is, the structure of the photo triac according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

먼저, 도 4 내지 도 6에 도시된 바와 같이, 본 발명의 바람직한 일 실시예에 따른 포토 트라이악(1)의 구조는, 예를 들어, 입출력 절연전압이 교류 5000볼트 이상이고, 항복전압이 600볼트 이상인 포토 트라이악의 구조로서, 크게 몰딩부(10)와, 1번핀(11)과, 2번핀(12)과, 3번핀(13)과, 4번핀(14)과, 6번핀(16) 및 6번핀에 절연되어 실장된 수광칩(20)과 2번핀에 실장된 발광칩(17)을 포함하여 이루어지는 구성이다.First, as shown in Figs. 4 to 6, the structure of the phototriac 1 according to the preferred embodiment of the present invention, for example, the input and output insulation voltage is AC 5000 volts or more, the breakdown voltage is 600 As the structure of the photo triac that is more than a bolt, the molding part 10, pin 1, 11, pin 12, pin 3, pin 4, pin 14, pin 16, and The light-emitting chip 20 is insulated from and mounted on pin 6 and the light emitting chip 17 mounted on pin 2.

여기서, 상기 몰딩부(10)는, 크게 절연재질인 몰딩용 수지재질로 이루어지는 것으로서, 상기 1번핀(11)과, 2번핀(12)과, 3번핀(13)과, 4번핀(14)과, 6번핀(16)의 일부를 감싸서 기밀이 유지되도록 몰딩 성형되어 이루어진다.Here, the molding part 10 is made of a resin material for molding largely insulating material, the pin 1, the pin 2, the pin 12, the pin 13, the pin 14 and , Is molded by molding a part of the sixth pin (16) to maintain airtightness.

또한, 도 5에 도시된 바와 같이, 상기 1번핀(11)은, 상기 몰딩부(10)의 일측면 우측으로 돌출되고, 상기 2번핀(12)은, 상기 몰딩부(10)의 일측면 중앙으로 돌출되며, 상기 3번핀(13)은, 상기 몰딩부(10)의 일측면 좌측으로 돌출되고, 상기 4번핀(14)은, 상기 몰딩부(10)의 타측면 좌측으로 돌출되다.In addition, as shown in FIG. 5, the first pin 11 protrudes to the right side of one side of the molding part 10, and the second pin 12 is the center of one side of the molding part 10. 3, the pin 13 protrudes to the left side of one side of the molding part 10, and the pin 4 protrudes to the left of the other side of the molding part 10.

특히, 본 발명의 상기 6번핀(16)은, 상기 몰딩부(10)의 타측면 우측으로 돌출되고, 상기 몰딩부(10)의 내부에 확폭부(16a)가 형성되는 것으로서, 상기 확폭부(16a)는 상기 수광칩(20)이 부착되도록 상기 수광칩(20)과 대응되는 충분한 면적을 갖는 것이다.In particular, the sixth pin 16 of the present invention protrudes to the right side of the other side of the molding part 10, and the widening part 16a is formed inside the molding part 10. 16a) has a sufficient area corresponding to the light receiving chip 20 so that the light receiving chip 20 is attached.

여기서, 도 5에 도시된 바와 같이, 상기 확폭부(16a)는, 상기 6번핀(16)의 절곡부(16b)에 의해 연결되어 상기 몰딩부(10)의 중앙에 위치하여 상기 몰딩부(10)가 상기 수광칩(20)의 사방을 둘러싸서 기밀성을 유지할 수 있는 공간을 충분히 확보하는 것이 바람직하다.Here, as shown in FIG. 5, the widening portion 16a is connected by the bent portion 16b of the sixth pin 16 to be positioned at the center of the molding portion 10 so that the molding portion 10 It is desirable to ensure a sufficient space for enclosing the light-receiving chip 20 around the light receiving chip 20 to maintain airtightness.

또한, 상기 수광칩(20)은, 상기 6번핀(16)의 확폭부(16a)에 부착되는 것으로서, 상기 수광칩(20)과 6번핀(16)의 확폭부(16a) 사이에 절연성 접착제층(30)이 도포되어 상기 6번핀(16)으로부터 각종 노이즈나 누설 전류가 전달되는 것을 방지할 수 있는 것이다.In addition, the light receiving chip 20 is attached to the widening portion 16a of the sixth pin 16, and an insulating adhesive layer is provided between the light receiving chip 20 and the widening portion 16a of the sixth pin 16. 30 is applied to prevent various noises or leakage currents from being transmitted from the sixth pin 16.

즉, 본 발명의 포토 트라이악의 구조는, 도 5에 도시된 바와 같이, 상기 4번핀(14)과 상기 6번핀(16)의 절연거리(L)를 확보하기 위하여 기존의 5번핀(115)이 완전히 제거되는 것으로서, 상기 4번핀(14)과 6번핀(16) 사이의 외표면을 절연재질인 몰딩부(10)로 둘러싸서 외부적인 오염이나 수분 등의 영향으로 절연전압이 저하 되고, 노이즈에 대한 영향이 증대되어 서로 간섭현상이 일어나는 것을 방지할 수 있는 것이다.That is, the structure of the photo triac of the present invention, as shown in Figure 5, the existing pin 5 (115) to ensure the insulating distance (L) of the pin 14 and the pin 6 (16) As it is completely removed, the outer surface between the 4 pin 14 and 6 pin 16 is surrounded by a molding part 10 made of an insulating material, and the insulation voltage is lowered due to external contamination, moisture, or the like. The impact on the system is increased to prevent interference from occurring.

여기서, 상기 발광다이오드(17)는 2번핀(12)에 도전성 접착제로 실장되고, 상기 발광 다이오드(17)에서 광신호가 발생될 수 있게 된다.Here, the light emitting diodes 17 are mounted on the second pin 12 with a conductive adhesive, and the light emitting diodes 17 can generate an optical signal.

또한, 도 6에 도시된 바와 같이, 상기 수광칩(20)의 전극과, 상기 4번핀(14), 6번핀(16)은 서로 와이어(40) 본딩되어 상기 수광칩(20)에서 수신된 광신호가 각종 전기적인 신호로 상기 4번핀(14) 또는 6번핀(16)으로 출력될 수 있는 것이다.In addition, as shown in FIG. 6, the electrodes of the light receiving chip 20, the 4th pin 14, and the 6th pin 16 are bonded to each other by a wire 40, and thus received by the light receiving chip 20. The call can be output to the 4 pin 14 or 6 pin 16 as various electrical signals.

그러므로 이러한 본 발명의 포토 트라이악(1)의 구조는, 종래의 도 2의 5번핀(115)을 완전히 제거하여 기존의 5번핀 절단공정이 불필요하고, 핀 절단작업시 몰딩부(10)와 핀에 발생되는 물리적인 스트레스를 방지함으로써 수광칩(20)의 손상을 방지하고, 기밀성을 향상시킬 수 있는 등 제품의 신뢰성이 크게 향상시킬 수 있는 것이다.Therefore, the structure of the photo triac (1) of the present invention, by removing the fifth pin 115 of the conventional Figure 2 completely eliminates the existing pin number 5 cutting process, the molding part 10 and the pin during the pin cutting operation By preventing the physical stress generated in the to prevent damage to the light-receiving chip 20, it is possible to significantly improve the reliability of the product, such as to improve the airtightness.

또한, 본 발명의 포토 트라이악(1)의 구조는, 4번핀(14)과 6번핀(16) 사이의 절연거리(L)가 길어져서 4번핀(14)과 6번핀(16) 사이의 외부 오염이나 수분 등의 영향으로 절연전압이 저하되는 방지할 수 있고, 노이즈에 대한 영향을 줄여서 간섭현상을 방지할 수 있는 것이다.In addition, the structure of the phototriac (1) of the present invention, the insulating distance (L) between the pin 4 and the pin 6 16 is longer, the outer between the pin 14 and pin 6 (16) Insulation voltage can be prevented from being lowered due to contamination or moisture, and interference can be prevented by reducing the influence on noise.

또한, 상기 6번핀(16)과 수광칩(20) 사이에 절연성 접착제층(30)을 도포하여 수광칩의 전기적으로 쇼트나 노이즈의 유입을 통한 오동작을 방지할 수 있는 것이다.In addition, the insulating adhesive layer 30 may be applied between the sixth pin 16 and the light receiving chip 20 to prevent malfunction of the light receiving chip through short circuit or noise.

본 발명은 상술한 실시예에 한정되지 않으며, 본 발명의 사상을 해치지 않는 범위 내에서 당업자에 의한 변형이 가능함은 물론이다.The present invention is not limited to the above-described embodiments, and of course, modifications may be made by those skilled in the art without departing from the spirit of the present invention.

따라서, 본 발명에서 권리를 청구하는 범위는 상세한 설명의 범위 내로 정해지는 것이 아니라 후술되는 청구범위와 이의 기술적 사상에 의해 한정될 것이다.Therefore, the scope of the claims in the present invention will not be defined within the scope of the detailed description, but will be defined by the following claims and the technical spirit thereof.

이상에서와 같이 본 발명의 포토 트라이악의 구조에 의하면, 제품의 신뢰성을 향상시킬 수 있으며, 핀과 핀 사이의 절연거리가 길어져서 외부적인 오염이나 수분에 의한 절연전압 저하 및 노이즈로 인한 간섭현상을 방지하고, 핀과 수광칩 사이의 전기적으로 쇼트나 노이즈 유입을 방지할 수 있으며, 높은 항복전압과 낮은 누설전류를 만족할 수 있는 효과를 갖는 것이다.As described above, according to the structure of the phototriac of the present invention, the reliability of the product can be improved, and the insulation distance between the pins and the pins is increased, thereby reducing the interference voltage due to external pollution, moisture, and noise. It is possible to prevent electrical short or noise inflow between the pin and the light receiving chip, and to satisfy the high breakdown voltage and the low leakage current.

Claims (3)

포토 트라이악의 구조에 있어서,In the structure of the photo triac, 몰딩부;Molding part; 상기 몰딩부의 일측면 우측으로 돌출되는 1번핀;Pin 1 protruding to the right side of the molding unit; 상기 몰딩부의 일측면 중앙으로 돌출되는 2번핀;Pin 2 protruding toward the center of one side of the molding part; 상기 몰딩부의 일측면 좌측으로 돌출되는 3번핀;A pin 3 protruding to the left side of one side of the molding part; 상기 몰딩부의 타측면 좌측으로 돌출되는 4번핀;Pin 4 protruding to the left side of the other side of the molding part; 상기 몰딩부의 타측면 우측으로 돌출되고, 상기 몰딩부의 내부에 확폭부가 형성되는 6번핀; A sixth pin protruding to the right of the other side of the molding part and having a widening part formed in the molding part; 상기 2번핀에 실장된 발광칩; 및A light emitting chip mounted on the second pin; And 상기 6번핀의 확폭부에 절연되어 부착되는 수광칩;A light receiving chip insulated and attached to the wide part of the sixth pin; 을 포함하여 이루어지는 것을 특징으로 하는 포토 트라이악의 구조.Photo triac structure, characterized in that comprises a. 제 1항에 있어서,The method of claim 1, 상기 수광칩의 전극과, 상기 4번핀, 및 상기 수광칩의 전극과 상기 6번핀은 서로 와이어 본딩되는 것을 특징으로 하는 포토 트라이악의 구조.And the electrode of the light receiving chip, the pin 4, and the electrode and the pin 6 of the light receiving chip are wire bonded to each other. 제 1항에 있어서, The method of claim 1, 상기 확폭부는, 상기 6번핀의 절곡부에 의해 연결되어 상기 몰딩부의 중앙에 위치하는 것을 특징으로 하는 포토 트라이악의 구조. The wide part is connected to the bent part of the pin 6 is the structure of the photo triac, characterized in that located in the center of the molding part.
KR1020060109146A 2006-11-06 2006-11-06 Structure of photo-coupler KR100763863B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275863A (en) * 1993-03-24 1994-09-30 Sharp Corp Power semiconductor device
JPH08186285A (en) * 1994-12-28 1996-07-16 Sharp Corp Optical coupling element
JPH11112020A (en) 1997-09-30 1999-04-23 Sharp Corp Solid state relay
JP2006196598A (en) 2005-01-12 2006-07-27 Sharp Corp Solid-state relay, electronic apparatus and method of manufacturing solid-state relay

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275863A (en) * 1993-03-24 1994-09-30 Sharp Corp Power semiconductor device
JPH08186285A (en) * 1994-12-28 1996-07-16 Sharp Corp Optical coupling element
JPH11112020A (en) 1997-09-30 1999-04-23 Sharp Corp Solid state relay
JP2006196598A (en) 2005-01-12 2006-07-27 Sharp Corp Solid-state relay, electronic apparatus and method of manufacturing solid-state relay

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