JPS58101477A - Self-holding type photocoupler - Google Patents
Self-holding type photocouplerInfo
- Publication number
- JPS58101477A JPS58101477A JP56200472A JP20047281A JPS58101477A JP S58101477 A JPS58101477 A JP S58101477A JP 56200472 A JP56200472 A JP 56200472A JP 20047281 A JP20047281 A JP 20047281A JP S58101477 A JPS58101477 A JP S58101477A
- Authority
- JP
- Japan
- Prior art keywords
- light
- self
- diode
- transistor
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
Abstract
Description
【発明の詳細な説明】
本ｇａ明は小ＩＩｉ軽量でしかも応用範囲の広い自己保
持１１重結合器に関する・
従来自己保持１ｔ！！点としては、第１図に示す１つに
リレーの励磁コイル（１００）の給電路に自己リレー接
点（１０１）ｔ−接続する手で、ｏＮ接点（１０６）を
一度閉じると閉回路を形成し、ＯＮ接点（１０６）の復
帰後も０ＦＦｌｌｊ一点（１０７）が開になるまでリレ
ーは励磁され続ける形式のものがあった・しかし励磁コ
イル（１００）やリレー接点（１０１）（１０１）ｒ１
体積が大きくなる上に、励磁電流は数＋ｍＡ以上を必簀
とするからリレー優点（１０１）の電流容量も大きくな
り、リレー接点（１０１）（１０１）の音も大きくなっ
ていた・さらにこの工うな自己保持ＩＩ接点の動作には
必ずＯＮ接点（１０６）が必ｌ！なので、１操作でモー
ドが足まるという長所をもちながら、遠隔操作には不同
きであった・
本発明は上述の点を考慮してなされｔもので、以下実施
例と共に本発明の詳細な説明する。[Detailed Description of the Invention] The present invention relates to a self-holding 11-fold coupler that is lightweight and has a wide range of applications. Conventional self-holding 1t! ! As shown in Fig. 1, when the self-relay contact (101) is connected to the power supply path of the excitation coil (100) of the relay, once the ON contact (106) is closed, a closed circuit is formed. There was a type of relay that continued to be energized even after the ON contact (106) was restored until the 0FFllj single point (107) was opened. However, the excitation coil (100) and relay contact (101) (101) r1
In addition to the larger volume, the excitation current must be several + mA or more, so the current capacity of the relay advantage (101) also becomes larger, and the noise of the relay contacts (101) (101) also becomes louder. An ON contact (106) is required for the operation of the self-holding II contact! Therefore, although it has the advantage of being able to select all modes with one operation, it is not suitable for remote control.The present invention has been made in consideration of the above points, and the present invention will be described in detail below along with examples. do.
まず［Ｉ２図は本発明の自己保持Ｗ元結合器の使用例を
示す基本の回路図である。口）は発覚素子（２１と受光
素子１３１の対からなる自己保持型完結合器で、従来の
元結合器と異なるのは発覚素子（２）の党が受光素子（
３）に直接導カ為れている事と、発覚素子（２１の給電
路に受光素子（３）が直列に挿入！ｌｌ続されている早
である。即ち発覚−子（２）が発覚ダイオードで受Ｊｌ
ｔ累子（３）がホトトランジスタの場合を例にとると、
図の如く発覚ダイオード（２）のカソードとホトトラン
ジスタ（３）のコレクタが［償接続され、発覚ダイオー
ド１２）のアノードとホトトランジスタ（３）の工ζツ
タの間に電源（４）が接続されている。（逆にホトトラ
ンジスタのエミッタと発覚ダイオードのアノ−ドが接続
されていても工い・）さらに発覚ダイオード（２）の点
灯電流は高々２０ｍムであるから、必要に応じて電流制
限抵抗（５）ｔ−用いる。尚この回路図において＋６１
ｒｔ受元素子１３）に並列に接続され几ＯＮ接点１フ）
は回路に直列に接続されたｏｙｙＷＩ点である。First, [Figure I2] is a basic circuit diagram showing an example of use of the self-holding W-element coupler of the present invention. The detection element (2) is a self-holding complete coupler consisting of a pair of the detection element (21) and the light-receiving element 131.The difference from the conventional coupler is that the detection element (2) is the light-receiving element (2).
3), and the light receiving element (3) is inserted in series in the power supply path of the detection element (21).In other words, the detection element (2) is connected to the detection diode. At JL
Taking as an example the case where the t-transistor (3) is a phototransistor,
As shown in the figure, the cathode of the detection diode (2) and the collector of the phototransistor (3) are connected, and the power supply (4) is connected between the anode of the detection diode (12) and the phototransistor (3). ing. (Conversely, it does not work even if the emitter of the phototransistor and the anode of the detection diode are connected.) Furthermore, since the lighting current of the detection diode (2) is at most 20 mm, a current limiting resistor (5 mm) is required as necessary. )t-use. In addition, +61 in this circuit diagram
Connected in parallel to rt receiving element 13), ON contact 1)
is the oyyWI point connected in series with the circuit.
このような回路において受光素子１３）が元を受行るか
又は０１９点（６）が閉になると発光素子（２）が点灯
し、それに工って発光素子（２）の党が受光素子１３）
に供給されるので０ＦＦＩＩ点（７）が開になるまでこ
の状態が自己保持される◎
８３図は上述した自己保持ｌ路に用いられる自己保持型
元結合器（１１の第１の実施例を示す断面図で、α３は
ＧａムＢ赤外尭元ダイオード等の発光素子、Ｑ３は８１
尋の受光素子で、いずれもリード１謁（Ｉｓａａ上に載
置固着し配線が施こしである。そして全体ｔ−纏元性樹
脂η為らなる枠体Ｑｌｌで封止しであるが、その枠体ｔ
ｔｅの内部は空洞でも工いし透光性樹脂（１９で埋めて
も工い０発元−子Ｉの党は枠体（１０に封じ込められる
ので効率工〈受尤素子ａ３に伝達される。In such a circuit, when the light-receiving element 13) receives the source or the 019 point (6) is closed, the light-emitting element (2) lights up, and the part of the light-emitting element (2) )
This state is self-maintained until the 0FFII point (7) is opened. ◎ Figure 83 shows the first embodiment of the self-holding element coupler (11) used in the above-mentioned self-holding L path. In the cross-sectional view shown, α3 is a light emitting element such as a GaM B infrared radiation source diode, and Q3 is an 81
The light-receiving elements are all mounted on a lead plate (Isaa) and wired.The whole body is sealed with a frame Qll made of t-cohesive resin η. frame t
The inside of te can be hollowed out or filled with translucent resin (19), but since the part of the 0-element I is sealed in the frame (10), it is efficiently transmitted to the receiving element A3.
５１１４図は自己保持型光結合器ｉｌｌのｊ［２の実施
例の断面図で、＠はＧａＰ 可視元発覚ダイオード尋の
発光素子、（２）は８１等の受光素子で、いずれもリー
ド線＠＠（２）の頂部に載−固着され配線が施こされて
いる。これらの素子にエポキシ樹１ＩＩＩＩの透元性の
＠Ｍ＠で封止されており、しかもその頂部はレンズ体に
成型して志るので、０ＮＷＩ点（６）を用いなくとｔ外
光（可視党又は赤外光）を照射する事に１って自己保持
状態に入る・しかもこの時発光素子の元が目視できるの
でインジケータにもなるＯ
第５図は自己保持１１重結合器（１）のＩＩ５の実施例
の断面図で、ｌｌｒｉＧａ１ｇ赤外発光ダイオード等の
発光素子、＠は８１焦電雛ダイオード等の受光素子であ
り、これらはステム■上に載置固着され配線が施こしで
ある。■はシリコン被膜を有するガラス板で選択的に赤
外光を透過させるもので、（至）は固定金属枠であり、
前記画素子は固定金属枠−ステム＠βラス板−で封止さ
れている。このような自己保持！ｌＩ元結合累子は赤外
ａｔ照射すると自己保持状態に入るが、可視党下にさら
されても動作しない◎この工うに１１４！ａの例と第５
図の例ではＯＮ！１点１６）を必ずしも必要としないの
で遠隔操作が容易に行なえる・また発光素子は一辺０．
５−以下、受光素子は一辺１−以下の大きさで充分なの
で非常に小１１にできる。、
以上の如く本発明は発光素子と受光素子を一体に對止し
、少なくとも前記発光素子の党が前記受光素子に至る工
う画素子を配置すると共に、前記発光素子の給電路に直
列に前記受光素子がＷ！続されている自己保持１１′ｙ
ｔ結合器であるから従来の様な励磁コイル等は不要で小
型軽量となり、しかも可動昏点がないので動作は静かで
あり、さらに遠隔操作やインジケータとしても利用でき
る・Figure 5114 is a cross-sectional view of an embodiment of j[2 of the self-holding optical coupler ill. It is mounted and fixed on the top of @(2) and wired. These elements are sealed with transparent @M@ of epoxy tree 1III, and the top part is intended to be molded into a lens body, so unless the 0NWI point (6) is used, external light (visible When irradiated with light (infrared light or infrared light), it enters a self-holding state.Moreover, at this time, the source of the light emitting element can be seen visually, so it can also be used as an indicator. In the cross-sectional view of the embodiment II5, a light emitting element such as an llriGa1g infrared light emitting diode, @ is a light receiving element such as an 81 pyroelectric chick diode, and these are mounted and fixed on the stem (2) and wired. ■ is a glass plate with a silicon coating that selectively transmits infrared light, and (to) is a fixed metal frame.
The pixel element is sealed with a fixed metal frame - stem @ β lath plate. Such self-preservation! The lI element bond goes into a self-holding state when exposed to infrared light, but it does not operate even when exposed to visible light. ◎This technique is 114! Example a and the fifth
In the example shown, ON! Since one point 16) is not necessarily required, remote control can be easily performed. Also, the light emitting element has a 0.000 mm width on each side.
Since it is sufficient that the size of the light-receiving element is 1- or less on each side, it can be made very small. As described above, the present invention integrates a light-emitting element and a light-receiving element, arranges at least a pixel element in which the light-emitting element reaches the light-receiving element, and arranges the pixel element in series with the power supply path of the light-emitting element. The light receiving element is W! Self-retention 11'y
Since it is a t-coupler, there is no need for excitation coils, etc. as in the past, making it small and lightweight.Furthermore, since there is no movable point, the operation is quiet, and it can also be used for remote control or as an indicator.
１１１図は従来方式にする自己保持ｍｉｌ！’点の回路
図、第２図は本発明の自己保持−完結合器の利用方法【
説明する回路図、第３図乃至第５Ｉ１１は本発明の実施
例の自己保持ＩＩ′ｙｔ結合器の断面図である。
（１１・・・自己保持ＩＩＩ党結合器、４ｍ３＠ｆｌＪ
−・・発光素子、足金属枠、情・・・ガラス板・
出願人 三洋１１ｔ機株式会社 外１名第１図
第３図
局間
９
第４図Figure 111 is a self-holding mil using the conventional method! Figure 2 shows the circuit diagram of point ', which shows how to use the self-holding complete coupler of the present invention [
The circuit diagrams to be described, FIGS. 3 to 5I11, are cross-sectional views of a self-holding II'yt coupler according to an embodiment of the present invention. (11...Self-holding III party combiner, 4m3@flJ
--Light emitting element, metal leg frame, information...Glass plate Applicant: Sanyo 11t Machinery Co., Ltd. (1 person) Figure 1 Figure 3 Between stations 9 Figure 4
Claims (1)
記発覚素子の党が前記受光素子に至る工う両嵩子を配置
すると共に、前記発覚素子の給電路に直列に前記受光素
子が接ａされている事１＊黴とする自己保持ｍｙｔ結合
器。1) The detecting element and the light receiving element are sealed together, and at least a part of the detecting element is arranged to reach the light receiving element, and the light receiving element is connected in series to the power supply path of the detecting element. A self-maintaining myt combiner with 1* mold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56200472A JPS58101477A (en) | 1981-12-11 | 1981-12-11 | Self-holding type photocoupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56200472A JPS58101477A (en) | 1981-12-11 | 1981-12-11 | Self-holding type photocoupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58101477A true JPS58101477A (en) | 1983-06-16 |
Family
ID=16424882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56200472A Pending JPS58101477A (en) | 1981-12-11 | 1981-12-11 | Self-holding type photocoupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58101477A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0720239A3 (en) * | 1994-12-28 | 1997-11-26 | SHARP Corporation | An optically coupled device |
-
1981
- 1981-12-11 JP JP56200472A patent/JPS58101477A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0720239A3 (en) * | 1994-12-28 | 1997-11-26 | SHARP Corporation | An optically coupled device |
| EP1406312A3 (en) * | 1994-12-28 | 2005-06-15 | Sharp Kabushiki Kaisha | An optically coupled device |
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