KR920001719A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
KR920001719A
KR920001719A KR1019910009214A KR910009214A KR920001719A KR 920001719 A KR920001719 A KR 920001719A KR 1019910009214 A KR1019910009214 A KR 1019910009214A KR 910009214 A KR910009214 A KR 910009214A KR 920001719 A KR920001719 A KR 920001719A
Authority
KR
South Korea
Prior art keywords
power supply
voltage
predetermined voltage
supply voltages
semiconductor device
Prior art date
Application number
KR1019910009214A
Other languages
Korean (ko)
Other versions
KR960002775B1 (en
Inventor
가즈야스 후지시마
Original Assignee
시기 모리야
미쓰비시뎅끼가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시기 모리야, 미쓰비시뎅끼가부시끼가이샤 filed Critical 시기 모리야
Publication of KR920001719A publication Critical patent/KR920001719A/en
Application granted granted Critical
Publication of KR960002775B1 publication Critical patent/KR960002775B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Power Sources (AREA)
  • Stand-By Power Supply Arrangements (AREA)

Abstract

내용 없음No content

Description

반도체 장치Semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 1도는 이 발명의 제 1의 실시예에 의한 반도체장치의 구성을 표시하는 블록도이다.1 is a block diagram showing the configuration of a semiconductor device according to the first embodiment of this invention.

제 2도는 제 1도의 반도체장치의 주요부의 회로구성을 표시하는 도면이다.FIG. 2 is a diagram showing the circuit configuration of the main part of the semiconductor device of FIG.

제 3도는 제 2도에 표시되는 전압레벨차 검출회로의 입출력 특성을 표시하는 도면이다.3 is a diagram showing input / output characteristics of the voltage level difference detecting circuit shown in FIG.

Claims (1)

외부에서 제1및 제2의 전원전압을 각각 받는 제1및 제2전원단자와, 상기 제1의 전원단자에서 제1의 전원전압을 받고, 그의 제1의 전원전압을 소정의 전압으로 변환하는 전압교환수단과, 상기 전압교환수단에 의해 변환된 상기 소정의 전압에 의해 동작하는 내부회로수단과, 상기 제1및 제2의 전원전압을 받고, 그들의 제1및 제2의 전원전압의 전압차가 소정의 전압차로 되어 있는 것을 검출하는 검출수단, 그리고 상기 검출수단이 상기 소정의 전압차를 검출했을 때에, 상기 전압변환수단에 의해 변환된 상기 소정의 전압에 바꾸되, 상기 제1및 제2의 전원 전압의 어느 한쪽에 의해 상기 내부 회로수단을 동작하게 하는 전원수단을 비치한 반도체장치.A first power supply terminal receiving external first and second power supply voltages respectively, and receiving a first power supply voltage at the first power supply terminal, and converting the first power supply voltage to a predetermined voltage; The voltage exchange means, the internal circuit means operated by the predetermined voltage converted by the voltage exchange means, the first and second power supply voltages, and the voltage difference between the first and second power supply voltages Detection means for detecting that a predetermined voltage difference is detected, and when the detection means detects the predetermined voltage difference, the detection means changes to the predetermined voltage converted by the voltage conversion means, A semiconductor device comprising power supply means for causing the internal circuit means to operate by either of the power supply voltages. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910009214A 1990-06-05 1991-06-04 Semiconductor device KR960002775B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2148130 1990-06-05
JP2-148130 1990-06-05
JP2148130A JP2544993B2 (en) 1990-06-05 1990-06-05 Semiconductor device

Publications (2)

Publication Number Publication Date
KR920001719A true KR920001719A (en) 1992-01-30
KR960002775B1 KR960002775B1 (en) 1996-02-26

Family

ID=15445932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910009214A KR960002775B1 (en) 1990-06-05 1991-06-04 Semiconductor device

Country Status (2)

Country Link
JP (1) JP2544993B2 (en)
KR (1) KR960002775B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007835A (en) * 2001-06-25 2003-01-10 Hitachi Ltd Semiconductor device and method of testing semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721151B2 (en) * 1986-04-01 1998-03-04 株式会社東芝 Semiconductor integrated circuit device
JPH0415949A (en) * 1990-05-09 1992-01-21 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JP2544993B2 (en) 1996-10-16
KR960002775B1 (en) 1996-02-26
JPH0439963A (en) 1992-02-10

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