KR960026233A

KR960026233A - Metal wiring method of semiconductor device

Info

Publication number: KR960026233A
Application number: KR1019940039346A
Authority: KR
Inventors: 안희복
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1994-12-30
Filing date: 1994-12-30
Publication date: 1996-07-22

Abstract

본 발명은 반도체 장치의 제조 공정중 금속 배선 방법에 관한 것으로, 특히 티타늄을 증착하여 알루미늄의 난반사도를 방지할 수 있는 금속배선 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal wiring method during a manufacturing process of a semiconductor device, and more particularly, to a metal wiring method capable of preventing diffuse reflection of aluminum by depositing titanium.

종래에는 알루미늄의 난반사를 방지하기 위하여 티탐늄질화막을 알루미늄 배선막 상부에 도포하였으나 알루미늄의 패턴 또는 홀을 형성하기 위하 마스킹 공정시 알루미늄층과 티타늄질화막층의 열패창 계수의 차이에 따라 티타늄질화막층에 크랙(crack)이 발생하고, 크랙 부위에 현상액이 침투되어 알루미늄층과 반응함으로써 알루미늄 식각시 찌꺼기가 남게 되는 현상이 발생하며, 알루미늄의 부식을 유발하고, 소자의 수율 또한 저하되며, 소자의 신뢰성 또는 감소하는 곤란을 수반하였다.Conventionally, a titanium nitride film is applied on the upper part of the aluminum wiring film to prevent diffuse reflection of aluminum. However, in the masking process to form a pattern or hole of aluminum, the titanium nitride film layer is applied to the titanium nitride film layer according to the difference in the heat loss coefficient of the aluminum layer and the titanium nitride film layer. Cracks are generated, and the developer penetrates the cracks and reacts with the aluminum layer to leave residues when etching aluminum, causing corrosion of the aluminum, lowering the yield of the device, and reducing the reliability of the device. It was accompanied by a decreasing difficulty.

따라서 본 발명은 ARC 티타늄층을 알루미늄 배선박 상부에 증착하여 알루미늄 패턴을 형성하기 위한 사진식각 공정시 알루미늄의 난반사에 의한 마스크의 넥킹(necking)과 마스크의 측부가 소멸된 노치(notch) 현상을 방지하여 소자의 신뢰도가 크게 개선되며, 사진 식각 공정시 현상액의 배리어로 작용하여 금속의 또한 방지할 수 있다.Therefore, the present invention prevents the notching phenomenon of the necking of the mask and the side of the mask dissipated by the diffuse reflection of aluminum during the photolithography process for depositing the ARC titanium layer on the aluminum wiring foil to form an aluminum pattern. Therefore, the reliability of the device is greatly improved, and the metal may also be prevented by acting as a barrier of the developer during the photolithography process.

Description

Metal wiring method of a semiconductor device.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 본 발명의 일 실시예의 제조방법을 설명하기 위한 각 제조공정에 있어서의 반도체 장치의 요부 단면도.Fig. 5 is a sectional view of principal parts of a semiconductor device in each manufacturing step for explaining the manufacturing method of the embodiment of the present invention.

Claims

In the manufacturing process of a semiconductor device, the steps of: depositing a first aluminum wiring film, depositing an ARC titanium layer, applying an interlayer insulator, forming a hole, and depositing a second aluminum wiring film And a step of depositing the ARC titanium layer again.

2. The method of claim 1, wherein the thickness of the ARC titanium film is 300 to 1000 kPa.

The method of claim 1 or 2, wherein the deposition method of the ARC titanium film is deposited by sputtering.

※ Note: The disclosure is based on the initial application.