KR970052257A - Metal contact way - Google Patents
Metal contact way Download PDFInfo
- Publication number
- KR970052257A KR970052257A KR1019950050886A KR19950050886A KR970052257A KR 970052257 A KR970052257 A KR 970052257A KR 1019950050886 A KR1019950050886 A KR 1019950050886A KR 19950050886 A KR19950050886 A KR 19950050886A KR 970052257 A KR970052257 A KR 970052257A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- metal
- film
- tungsten nitride
- metal contact
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체 소자의 금속 콘택 형성 방법에 있어서; 층간절연막의 소정부위를 식각하여 하부전도층의 콘택부위를 노출시키는 콘택 홀을 형성하는 단계; 전체구조 상부에 장벽금속 역할을 하는 텅스텐질화막(WNx)을 형성하는 단계; 배선용 금속막을 형성하는 단계를 포함하는 것을 특징으로 하는 금속 콘택 형성 방법에 관한 것으로서, 장벽 특성이 우수한 텅스텐질화막을 장벽금속으로 사용함으로써, 보다 적은 두께로 형성 가능하며, 그 상부에 형성되는 알루미늄막의 층 덮힘을 개선하므로써 금속배선의 신뢰성을 향상시키는 효과를 가져 온다.The present invention provides a metal contact forming method of a semiconductor device; Etching a predetermined portion of the interlayer insulating film to form a contact hole exposing a contact portion of the lower conductive layer; Forming a tungsten nitride film (WNx) serving as a barrier metal on the entire structure; A metal contact forming method comprising the step of forming a metal film for wiring, wherein a tungsten nitride film having excellent barrier properties is used as a barrier metal, so that a thickness can be formed to a smaller thickness, and an aluminum film layer formed thereon By improving the covering, the reliability of the metal wiring is improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 일실시예에 따른 금속 콘택 단면도.2 is a cross-sectional view of the metal contact according to an embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050886A KR970052257A (en) | 1995-12-16 | 1995-12-16 | Metal contact way |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050886A KR970052257A (en) | 1995-12-16 | 1995-12-16 | Metal contact way |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052257A true KR970052257A (en) | 1997-07-29 |
Family
ID=66594207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950050886A KR970052257A (en) | 1995-12-16 | 1995-12-16 | Metal contact way |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970052257A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100301057B1 (en) * | 1999-07-07 | 2001-11-01 | 윤종용 | Semiconductor device having copper interconnection layer and manufacturing method thereof |
-
1995
- 1995-12-16 KR KR1019950050886A patent/KR970052257A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100301057B1 (en) * | 1999-07-07 | 2001-11-01 | 윤종용 | Semiconductor device having copper interconnection layer and manufacturing method thereof |
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WITN | Withdrawal due to no request for examination |