KR970003845A - Metal wiring formation method of semiconductor device - Google Patents

Abstract

The present invention relates to a method for forming a metal wiring of a semiconductor device, to form a planarized interlayer insulating film on the semiconductor substrate, and to form a contact hole by an etching process using a metal wiring contact mask, and then PVD or CVD on the entire surface A titanium film is formed to a certain thickness, and a first titanium nitride film is formed thick on the titanium film by the CVD method, and a second titanium nitride film is formed thin on the upper surface of the titanium film by PVD method. Disadvantages of thin films formed by PVD and CVD methods by forming a tungsten contact plug by removing the tungsten film except the tungsten film embedded in the contact hole by front etching the tungsten film, and then forming a metal layer on the entire surface of the tungsten contact plug. Improve the characteristics and reliability of semiconductor devices It is a technology that enables a highly integrated circuit of a semiconductor device.

Description

Metal wiring formation method of semiconductor device

Since this is an open matter, no full text was included.

1E is a schematic diagram showing a metal wiring forming process of a semiconductor device according to an embodiment of the present invention.

Claims (8)

Forming a first interlayer insulating film on the semiconductor substrate, forming a conductive wiring on one side of the first interlayer insulating film, forming a flattened second interlayer insulating film on the entire surface, and a metal wiring contact mask. Forming a first contact hole for exposing a predetermined portion of the semiconductor substrate by an etching process and forming a second contact hole for exposing the conductive wiring; forming a predetermined thickness of a titanium film on the entire surface; Forming a first titanium nitride film on the titanium film by a CVD method, forming a second titanium nitride film on the first titanium nitride film by a PVD method, and a tungsten film on the entire surface. And depositing a tungsten contact plug embedded in the first contact hole and the second contact hole by etching the entire surface of the tungsten film. Step, a metal wiring method for forming a semiconductor device including a step of an upper aluminum alloy on the entire surface to form a predetermined thickness. The method of claim 1, wherein the titanium film is formed by a PVD method. The method of claim 1, wherein the titanium film is formed to have a thickness of about 50 to about 300 microns. 2. The method of claim 1, wherein the first titanium nitride film is formed to a thickness of 50 to 900 kHz. The method of claim 1, wherein the first titanium nitride film is formed using a TDMAT as a metal organic compound source. The method of claim 1, wherein the second titanium nitride film is formed to have a thickness of about 10 to about 300 microns. 2. The method of claim 1, wherein the tungsten film is formed to a thickness of 3000 to 5000 kPa. The method of claim 1, wherein the aluminum alloy is formed to a thickness of 4000 to 6000 GHz metal wiring method of a semiconductor device. ※ Note: The disclosure is based on the initial application.