KR960012246B1 - 반도체 장치의 소자간 분리 영역의 형성 방법 - Google Patents

반도체 장치의 소자간 분리 영역의 형성 방법 Download PDF

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Publication number
KR960012246B1
KR960012246B1 KR1019910016738A KR910016738A KR960012246B1 KR 960012246 B1 KR960012246 B1 KR 960012246B1 KR 1019910016738 A KR1019910016738 A KR 1019910016738A KR 910016738 A KR910016738 A KR 910016738A KR 960012246 B1 KR960012246 B1 KR 960012246B1
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KR
South Korea
Prior art keywords
forming
film
insulating film
oxide film
trench
Prior art date
Application number
KR1019910016738A
Other languages
English (en)
Korean (ko)
Inventor
겐지 히라카와
Original Assignee
가부시기가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 도시바, 아오이 죠이치 filed Critical 가부시기가이샤 도시바
Application granted granted Critical
Publication of KR960012246B1 publication Critical patent/KR960012246B1/ko

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KR1019910016738A 1990-09-27 1991-09-26 반도체 장치의 소자간 분리 영역의 형성 방법 KR960012246B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2258337A JP2589209B2 (ja) 1990-09-27 1990-09-27 半導体装置の素子間分離領域の形成方法
JP90-258337 1990-09-27

Publications (1)

Publication Number Publication Date
KR960012246B1 true KR960012246B1 (ko) 1996-09-18

Family

ID=17318845

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910016738A KR960012246B1 (ko) 1990-09-27 1991-09-26 반도체 장치의 소자간 분리 영역의 형성 방법

Country Status (2)

Country Link
JP (1) JP2589209B2 (ja)
KR (1) KR960012246B1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416041A (en) * 1993-09-27 1995-05-16 Siemens Aktiengesellschaft Method for producing an insulating trench in an SOI substrate
JP4244456B2 (ja) 1999-08-04 2009-03-25 株式会社デンソー 半導体装置の製造方法、絶縁ゲート型バイポーラトランジスタの製造方法及び絶縁ゲート型バイポーラトランジスタ
ITMI20010039A1 (it) 2000-01-14 2002-07-11 Denso Corp Dispositivo a semiconduttori e metodo per la fabbricazione dello stesso
US6864532B2 (en) 2000-01-14 2005-03-08 Denso Corporation Semiconductor device and method for manufacturing the same
JP4200626B2 (ja) 2000-02-28 2008-12-24 株式会社デンソー 絶縁ゲート型パワー素子の製造方法
JP2002076113A (ja) 2000-08-31 2002-03-15 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
KR100419873B1 (ko) 2001-09-28 2004-02-25 주식회사 하이닉스반도체 반도체소자의 격리방법
JP5446388B2 (ja) * 2009-03-31 2014-03-19 サンケン電気株式会社 集積化半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214238A (ja) * 1983-05-20 1984-12-04 Sanyo Electric Co Ltd 分離領域の形成方法
JPS6159852A (ja) * 1984-08-31 1986-03-27 Toshiba Corp 半導体装置の製造方法
US4666556A (en) * 1986-05-12 1987-05-19 International Business Machines Corporation Trench sidewall isolation by polysilicon oxidation

Also Published As

Publication number Publication date
JP2589209B2 (ja) 1997-03-12
JPH04134844A (ja) 1992-05-08

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