KR960012246B1 - 반도체 장치의 소자간 분리 영역의 형성 방법 - Google Patents
반도체 장치의 소자간 분리 영역의 형성 방법 Download PDFInfo
- Publication number
- KR960012246B1 KR960012246B1 KR1019910016738A KR910016738A KR960012246B1 KR 960012246 B1 KR960012246 B1 KR 960012246B1 KR 1019910016738 A KR1019910016738 A KR 1019910016738A KR 910016738 A KR910016738 A KR 910016738A KR 960012246 B1 KR960012246 B1 KR 960012246B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- film
- insulating film
- oxide film
- trench
- Prior art date
Links
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2258337A JP2589209B2 (ja) | 1990-09-27 | 1990-09-27 | 半導体装置の素子間分離領域の形成方法 |
JP90-258337 | 1990-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960012246B1 true KR960012246B1 (ko) | 1996-09-18 |
Family
ID=17318845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910016738A KR960012246B1 (ko) | 1990-09-27 | 1991-09-26 | 반도체 장치의 소자간 분리 영역의 형성 방법 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2589209B2 (ja) |
KR (1) | KR960012246B1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5416041A (en) * | 1993-09-27 | 1995-05-16 | Siemens Aktiengesellschaft | Method for producing an insulating trench in an SOI substrate |
JP4244456B2 (ja) | 1999-08-04 | 2009-03-25 | 株式会社デンソー | 半導体装置の製造方法、絶縁ゲート型バイポーラトランジスタの製造方法及び絶縁ゲート型バイポーラトランジスタ |
ITMI20010039A1 (it) | 2000-01-14 | 2002-07-11 | Denso Corp | Dispositivo a semiconduttori e metodo per la fabbricazione dello stesso |
US6864532B2 (en) | 2000-01-14 | 2005-03-08 | Denso Corporation | Semiconductor device and method for manufacturing the same |
JP4200626B2 (ja) | 2000-02-28 | 2008-12-24 | 株式会社デンソー | 絶縁ゲート型パワー素子の製造方法 |
JP2002076113A (ja) | 2000-08-31 | 2002-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
KR100419873B1 (ko) | 2001-09-28 | 2004-02-25 | 주식회사 하이닉스반도체 | 반도체소자의 격리방법 |
JP5446388B2 (ja) * | 2009-03-31 | 2014-03-19 | サンケン電気株式会社 | 集積化半導体装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59214238A (ja) * | 1983-05-20 | 1984-12-04 | Sanyo Electric Co Ltd | 分離領域の形成方法 |
JPS6159852A (ja) * | 1984-08-31 | 1986-03-27 | Toshiba Corp | 半導体装置の製造方法 |
US4666556A (en) * | 1986-05-12 | 1987-05-19 | International Business Machines Corporation | Trench sidewall isolation by polysilicon oxidation |
-
1990
- 1990-09-27 JP JP2258337A patent/JP2589209B2/ja not_active Expired - Fee Related
-
1991
- 1991-09-26 KR KR1019910016738A patent/KR960012246B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2589209B2 (ja) | 1997-03-12 |
JPH04134844A (ja) | 1992-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR960006714B1 (ko) | 반도체 장치의 제조 방법 | |
US5482871A (en) | Method for forming a mesa-isolated SOI transistor having a split-process polysilicon gate | |
US5236861A (en) | Manufacturing method of metal-insulator-semiconductor device using trench isolation technique | |
US4590666A (en) | Method for producing a bipolar transistor having a reduced base region | |
US4661832A (en) | Total dielectric isolation for integrated circuits | |
KR960012246B1 (ko) | 반도체 장치의 소자간 분리 영역의 형성 방법 | |
JP2958695B2 (ja) | 半導体素子の製造方法 | |
US4810668A (en) | Semiconductor device element-isolation by oxidation of polysilicon in trench | |
EP0762492B1 (en) | Semiconductor device manufacturing method | |
KR20020042251A (ko) | 반도체 소자의 분리구조 제조방법 | |
JPH0684929A (ja) | 半導体装置 | |
JP2667552B2 (ja) | 半導体装置の製造方法 | |
KR910000020B1 (ko) | 반도체장치의 제조방법 | |
KR0185479B1 (ko) | 반도체 소자의 소자분리막 형성방법 | |
KR100456705B1 (ko) | 반도체 장치의 제조 공정 | |
US6040233A (en) | Method of making a shallow trench isolation with thin nitride as gate dielectric | |
JPS6252950B2 (ja) | ||
EP0146760B1 (en) | One mask technique for substrate contacting in integrated circuits | |
KR100360184B1 (ko) | 반도체집적회로장치의제조방법 | |
JP3021850B2 (ja) | 半導体装置の製造方法 | |
GB2345578A (en) | A method of manufacturing a semiconductor device including a trench | |
KR100335264B1 (ko) | 반도체 소자의 소자분리막 제조방법 | |
KR20010038607A (ko) | 반도체장치를 위한 필드 분리방법 | |
JPS6255709B2 (ja) | ||
JP3053831B2 (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030901 Year of fee payment: 8 |
|
LAPS | Lapse due to unpaid annual fee |