KR960009990B1 - Method for forming a dielectric layer in semiconductor device - Google Patents

Method for forming a dielectric layer in semiconductor device Download PDF

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Publication number
KR960009990B1
KR960009990B1 KR93012336A KR930012336A KR960009990B1 KR 960009990 B1 KR960009990 B1 KR 960009990B1 KR 93012336 A KR93012336 A KR 93012336A KR 930012336 A KR930012336 A KR 930012336A KR 960009990 B1 KR960009990 B1 KR 960009990B1
Authority
KR
South Korea
Prior art keywords
dielectric layer
forming
semiconductor device
polysilicon layer
planarization
Prior art date
Application number
KR93012336A
Other languages
English (en)
Other versions
KR950002017A (ko
Inventor
Young-Kyun Kim
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93012336A priority Critical patent/KR960009990B1/ko
Publication of KR950002017A publication Critical patent/KR950002017A/ko
Application granted granted Critical
Publication of KR960009990B1 publication Critical patent/KR960009990B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR93012336A 1993-06-30 1993-06-30 Method for forming a dielectric layer in semiconductor device KR960009990B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93012336A KR960009990B1 (en) 1993-06-30 1993-06-30 Method for forming a dielectric layer in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93012336A KR960009990B1 (en) 1993-06-30 1993-06-30 Method for forming a dielectric layer in semiconductor device

Publications (2)

Publication Number Publication Date
KR950002017A KR950002017A (ko) 1995-01-04
KR960009990B1 true KR960009990B1 (en) 1996-07-25

Family

ID=19358550

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93012336A KR960009990B1 (en) 1993-06-30 1993-06-30 Method for forming a dielectric layer in semiconductor device

Country Status (1)

Country Link
KR (1) KR960009990B1 (ko)

Also Published As

Publication number Publication date
KR950002017A (ko) 1995-01-04

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