KR950701575A - 질소화 알루미늄의 박막 금속화 및 브레이징(thin film metallization and brazing of aluminum nitride) - Google Patents

질소화 알루미늄의 박막 금속화 및 브레이징(thin film metallization and brazing of aluminum nitride)

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Publication number
KR950701575A
KR950701575A KR1019940704051A KR19940704051A KR950701575A KR 950701575 A KR950701575 A KR 950701575A KR 1019940704051 A KR1019940704051 A KR 1019940704051A KR 19940704051 A KR19940704051 A KR 19940704051A KR 950701575 A KR950701575 A KR 950701575A
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substrate
aluminum
nitrogenized
layer
aluminum substrate
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KR1019940704051A
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에이. 테노버 마이클
제이. 애드람 에드윈
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마이클 씨. 퍼비스
더 카보런덤 컴파니
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Publication of KR950701575A publication Critical patent/KR950701575A/ko

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Abstract

본 발명의 질소화 알루미늄 금속화 구조에는, AIN소결체를 함유하는 기판, 및 소결체상에 증착된 제1층 및 제1층상에 증착된 제2층을 함유하는 기판상에 형성된 금속화 구조가 포함된다. 제1층은 원자%를 기준으로 한 하기 일반식의 합금을 함유한다;
XxZ100-x
[식중,X는 Ti, Zr, Hf 및 회토류 원소로 구성된 군으로부터 선택된 1종이상의 원소이고, Z는 Mo, W, Cr, Nb, V및 Ta로 구성된 군으로부터 선택된 1종이상의 원소이며, 10〈x〈60원자 %이다]제2층은 Au, Co, Cu, Ni 및 Fe 로 구성된 군으로부터 선택된 1종이상의 원소를 함유한다.

Description

질소화 알루미늄의 박막 금속화 및 브레이징(THIN FILM METALLIZATION AND BRAZING OF ALUMINUM NITRIDE)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 질소화 알루미늄 금속화 구조의 브레이징하기 전의 단면도다.
제2도는 추가의 연성층을 함유하는 본 발명의 질소화 알루미늄 금속화 구조의 브레이징하기 전의 단면도이다.
제3도는 접합된 납 프레임을 함유하는 본 발명의 질소화 알루미늄 금속화 구조의 브레이징 후의단면도이다.
제4도는 접합된 납 프레임을 본 발명의 질소화 알루미늄 금속화 구조의 추가 구현예의 브레이징 후의 단면도이다.

Claims (33)

  1. 질소화 알루미늄 소결체를 함유하는 기판; 및 i)하기 일반식의 합금을 함유하며 상기 소결체상에 중착된 제1층 ; 및
    XxZ100-x
    [식중,X는 Ti, Zr, Hf 및 회토류 원소로 구성된 군으로부터 선택된 1종이상의 원소이고, Z는 Mo, W, Cr, Nb, V및 Ta로 구성된 군으로부터 선택된 1종이상의 원소이며, 10〈x〈60원자 %이다]ii)Au, Co, Cu, Ni 및 Fe 로 구성된 군으로부터 선택된 1종 이상의 원소를 함유하며 상기 제1층상에 중착된 제2층을 함유하고 상기 기판상에 형성된 금속화 구조를 함유하는 질소화 알루미늄 기판.
  2. 제1항에 있어서, X가 Ti인 질소화 알루미늄 기판.
  3. 제1항에 있어서, X가Zr 및 Hf로 구성된 군으로 부터 선택된 1종의 원소를 함유하며 10〈x〈30원자 %인 질소화 알루미늄 기판.
  4. 제1항에 있어서, Z 가 W인 질소화 알루미늄 기판.
  5. 제2항에 있어서, Z 가 W인 질소화 알루미늄 기판.
  6. 제2항에 있어서, Z 가 Mo인 질소화 알루미늄 기판.
  7. 제2항에 있어서, Z 가 Cr인 질소화 알루미늄 기판.
  8. 제4항에 있어서, X 가 Zr인 질소화 알루미늄 기판.
  9. 제1항에 있어서, 상기 제1층의 두께가 약 0.01∼0.5㎛의 범위인 질소화 알루미늄 기판.
  10. 제1항에 있어서, 상기 제2층의 두께가 약 1∼10㎛의 범위인 질소화 알루미늄 기판.
  11. 제1항에 있어서, 상기 제2층의 Ni및 Cu를 함유하는 질소화 알루미늄 기판.
  12. 제1항에 있어서, Ni, Co,Cu, Au 및 그의 합금으로 구성된 군으로부터 선택되며 상기 제2층상에 증착된 제3층을 추가로 함유하는 질소화 알루미늄 기판.
  13. 제11항에 있어서, 상기 제3층의 상기 제2층상에 전착된 질소화 알루미늄 기판.
  14. 제1항에 있어서, 상기 제1층의 구조가 실질적으로 체심입방구조인 질소화 알루미늄 기판.
  15. 질소화 알루미늄 소결체를 함유하는 기판; 및 i)Ni, Cu, Co, Fe 및 Au로 구성된 군으로부터 선택된 1종 이상의 원소인 제1성분 ; ii)Ti, Zr, Hf 및 희토류 원소로 구성된 군ㅇ로부터 선태괸 1종이상의 원소인 제2성분; iii)Mo,w, Cr, Nb, V 및 Ta로 구성된 군으로부터 선택된 1종이상의 원소인 제3성분 및; iv) 상기 제2성분으이 질소화물 또는 알루미늄 화물 약 1%5미만을 함유하며, 실온에서 연신율이 5%이상인, 상기 기판에 접합된 금속 합금을 함유하는 질소화 알루미늄 기판.
  16. 제15항에 있어서, 상기 금속 합금 및 상기 기판간의 접합강도가 상기 기판의 강도보다 큰 질소화 알루미늄 기판.
  17. 제15항에 있어서, 금속 합금이 고온 노출 후에 형성되는 질소화 알루미늄 기판.
  18. 제15항에 있어서, 상기 금속 합금내에 2.5원자%미만의 산소를 추가로 함유하는 질소화 알루미늄 기판.
  19. 제15항에 있어서, 상기 제2성분의 대부분의 산화물, 탄화물 및, 존재할 경우 질소화물이 상기 금속 합금내에 불연속의 분산된 입자로서 함유된 질소화 알루미늄 기판.
  20. 제15항에 있어서, 10체적%미만의 상기 금속 합금이 금속간 화합물을 함유하는 질소화 알루미늄 기판.
  21. 제15항에 있어서, 25%이상의 상기 제2성분이 금속상태인 질소화 알루미늄 기판.
  22. 제15항에 있어서, 약 80원자% 이상의 상기 금속 합금이 상기 제1성분을 함유하는 질소화 알루미늄 기판.
  23. 질소화 알루미늄 소결체를 함유하는 기판; 및 i)하기 일반식의 합금을 함유하는 제1층을 상기 기판상에 증착하고;
    XxZ100-x
    [식중,X는 Ti, Zr, Hf 및 회토류 원소로 구성된 군으로부터 선택된 1종이상의 원소이고, Z는 Mo, W, Cr, Nb, V및 Ta로 구성된 군으로부터 선택된 1종이상의 원소이며, 10〈x〈60원자 %이다]ii)Au, Co, Cu, Ni 및 Fe 중 1종이상의 원소를 함유하는 제2층을 상기 제1층에 증착하여 금속화 기판을 형성하고; iii)상기 금속화 기판을 고온에 노출시킴으로서 상기 기판상에 형성된 금속 합금을 함유하는 질소화 알루미늄 기판.
  24. 제23항에 있어서, 상기 고온이 500℃이상인 질소화 알루미늄 기판.
  25. 제23항에 있어서, 상기 금속화 기판을 고온에 노출시킴으로써 상기 금속화 기판을 금속 원소에 브레이징 하는 질소화 알루미늄 기판.
  26. i) 하기 일반식의 합금을 함유하는 제1층을 질소화 알루미늄 기판상에 증착하고;
    XxZ100-x
    [식중,X는 Ti, Zr, Hf 및 회토류 원소로 구성된 군으로부터 선택된 1종이상의 원소이고, Z는 Mo, W, Cr, Nb, V및 Ta로 구성된 군으로부터 선택된 1종이상의 원소이며, 10〈x〈60원자 %이다]ii)Au, Co, Cu, Ni 및 Fe 중 1종이상의 원소를 함유하는 제2층을 상기 제1층에 증착하여 금속화 기판을 형성함을 특징으로 하는 금속화된 질소화 알루미늄 기판의 제조방법.
  27. 제26항에 있어서, 추가로 상기 금속화 기판을 고온에 노출시킴을 특징으로 하는 금속화된 질소화 알루미늄 기판의 제조방법.
  28. 제27항에 있어서, 상기 고온이 500℃이상인 금속화된 질소화 알루미늄 기판의 제조방법.
  29. 제27항에 있어서, 상기 금속화 기판을 고온에 노풀시킴으로써 상기 금속화 기판을 금속 원소에 브레이징 하는 금속화된 질소화 알루미늄 기판의 제조방법
  30. i)80중량%이사의 은 및 구리 , ii)Ti, Zr,Hf및 회토류 원소중의 1종이상의 원소로부터 선택된 원소 2중량%미만, iii)Mo, W, Cr, Nb, V 및 Ta로 부터 선택된 1종이상의 원소를 함유하는 금속 합금 구조에 의해 납 프레임이 접합된 질소화 알루미늄.
  31. 제30항에 있어서, 상기 금속 합금 구조가 Au, Co, Ni 및 Fe중의 1종이상으로부터 선택된 원소를 포함하는 질소화 알루미늄 기판.
  32. 제31항에 있어서, 상기 금속 합금 구조가 Ni를 포함하는 질소화 알루미늄 기판
  33. 제30항에 있어서, 상기 금속 합금 구조가 은-풍부 구역 및 1개 이상의 구리-풍부 구역을 함유하는 질소화 알루미늄 기판.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940704051A 1992-05-12 1993-05-12 질소화 알루미늄의 박막 금속화 및 브레이징(thin film metallization and brazing of aluminum nitride) KR950701575A (ko)

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US88192692A 1992-05-12 1992-05-12
US07/881,926 1992-05-12
US90411092A 1992-06-25 1992-06-25
US07/904,110 1992-06-25
PCT/US1993/004541 WO1993023246A1 (en) 1992-05-12 1993-05-12 Thin film metallization and brazing of aluminum nitride

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JP3866320B2 (ja) * 1995-02-09 2007-01-10 日本碍子株式会社 接合体、および接合体の製造方法
US5849170A (en) * 1995-06-19 1998-12-15 Djokic; Stojan Electroless/electrolytic methods for the preparation of metallized ceramic substrates
JP3746594B2 (ja) 1997-06-20 2006-02-15 日本碍子株式会社 セラミックスの接合構造およびその製造方法
FR2783185B1 (fr) * 1998-09-11 2000-10-13 Commissariat Energie Atomique Assemblage metal-nitrure d'aluminium, avec presence de nitrure de terre(s) rare(s) a l'interface pour assurer le transfert thermique
CN103741141B (zh) * 2014-01-24 2016-03-02 浙江工业大学 一种氮化铝陶瓷板金属化的方法
JP7046643B2 (ja) * 2018-02-23 2022-04-04 株式会社ノリタケカンパニーリミテド 放熱性基板
DE102019135099A1 (de) * 2019-12-19 2021-06-24 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren
DE102019135097A1 (de) * 2019-12-19 2021-06-24 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren
CN113956062B (zh) * 2021-10-25 2022-11-15 燕山大学 一种陶瓷基板AlN/Ti层状复合材料及其制备方法和应用

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DE3789628T3 (de) * 1986-02-20 1998-04-02 Toshiba Kawasaki Kk Gesinterter Körper aus Aluminiumnitrid mit leitender metallisierter Schicht.
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EP0640039A4 (en) 1995-04-19
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