FR2718568B1
(fr)
*
|
1994-04-06 |
1996-07-05 |
France Telecom |
Procédé d'implantation haute énergie à partir d'un implanteur de type faible ou moyen courant et dispositifs correspondants.
|
US5481116A
(en)
*
|
1994-06-10 |
1996-01-02 |
Ibis Technology Corporation |
Magnetic system and method for uniformly scanning heavy ion beams
|
US5438203A
(en)
*
|
1994-06-10 |
1995-08-01 |
Nissin Electric Company |
System and method for unipolar magnetic scanning of heavy ion beams
|
US5661043A
(en)
*
|
1994-07-25 |
1997-08-26 |
Rissman; Paul |
Forming a buried insulator layer using plasma source ion implantation
|
US5554853A
(en)
*
|
1995-03-10 |
1996-09-10 |
Krytek Corporation |
Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques
|
JP3288554B2
(ja)
*
|
1995-05-29 |
2002-06-04 |
株式会社日立製作所 |
イオン注入装置及びイオン注入方法
|
US5672879A
(en)
*
|
1995-06-12 |
1997-09-30 |
Glavish; Hilton F. |
System and method for producing superimposed static and time-varying magnetic fields
|
GB2344213B
(en)
*
|
1995-11-08 |
2000-08-09 |
Applied Materials Inc |
An ion implanter with improved field control
|
JP3456093B2
(ja)
*
|
1996-06-25 |
2003-10-14 |
松下電工株式会社 |
非接触電力伝達装置
|
US5907158A
(en)
*
|
1997-05-14 |
1999-05-25 |
Ebara Corporation |
Broad range ion implanter
|
GB2343550A
(en)
|
1997-07-29 |
2000-05-10 |
Silicon Genesis Corp |
Cluster tool method and apparatus using plasma immersion ion implantation
|
DE19745771B4
(de)
|
1997-10-16 |
2005-12-22 |
Unaxis Deutschland Holding Gmbh |
Verfahren für den Betrieb eines Hochleistungs-Elektronenstrahls
|
JP3449198B2
(ja)
*
|
1997-10-22 |
2003-09-22 |
日新電機株式会社 |
イオン注入装置
|
JPH11144671A
(ja)
*
|
1997-11-06 |
1999-05-28 |
Hitachi Ltd |
イオン注入装置
|
US6271529B1
(en)
|
1997-12-01 |
2001-08-07 |
Ebara Corporation |
Ion implantation with charge neutralization
|
US6120660A
(en)
*
|
1998-02-11 |
2000-09-19 |
Silicon Genesis Corporation |
Removable liner design for plasma immersion ion implantation
|
US6274459B1
(en)
|
1998-02-17 |
2001-08-14 |
Silicon Genesis Corporation |
Method for non mass selected ion implant profile control
|
US6113735A
(en)
*
|
1998-03-02 |
2000-09-05 |
Silicon Genesis Corporation |
Distributed system and code for control and automation of plasma immersion ion implanter
|
KR100282492B1
(ko)
*
|
1998-04-13 |
2001-02-15 |
윤종용 |
불순물차단장치를구비하는이온주입장치
|
GB9813327D0
(en)
*
|
1998-06-19 |
1998-08-19 |
Superion Ltd |
Apparatus and method relating to charged particles
|
US6207963B1
(en)
*
|
1998-12-23 |
2001-03-27 |
Axcelis Technologies, Inc. |
Ion beam implantation using conical magnetic scanning
|
US6291827B1
(en)
*
|
1999-03-26 |
2001-09-18 |
Mosel Vitelic Inc. |
Insulating apparatus for a conductive line
|
US6262420B1
(en)
*
|
1999-04-16 |
2001-07-17 |
Sandia Corporation |
Detection of alpha radiation in a beta radiation field
|
US6423976B1
(en)
|
1999-05-28 |
2002-07-23 |
Applied Materials, Inc. |
Ion implanter and a method of implanting ions
|
US7385357B2
(en)
*
|
1999-06-21 |
2008-06-10 |
Access Business Group International Llc |
Inductively coupled ballast circuit
|
US7126450B2
(en)
*
|
1999-06-21 |
2006-10-24 |
Access Business Group International Llc |
Inductively powered apparatus
|
US6825620B2
(en)
*
|
1999-06-21 |
2004-11-30 |
Access Business Group International Llc |
Inductively coupled ballast circuit
|
US7612528B2
(en)
|
1999-06-21 |
2009-11-03 |
Access Business Group International Llc |
Vehicle interface
|
US6248642B1
(en)
|
1999-06-24 |
2001-06-19 |
Ibis Technology Corporation |
SIMOX using controlled water vapor for oxygen implants
|
US6403972B1
(en)
*
|
1999-07-08 |
2002-06-11 |
Varian Semiconductor Equipment Associates, Inc. |
Methods and apparatus for alignment of ion beam systems using beam current sensors
|
US6423975B1
(en)
|
1999-08-18 |
2002-07-23 |
Ibis Technology, Inc. |
Wafer holder for simox processing
|
US6433342B1
(en)
|
1999-08-18 |
2002-08-13 |
Ibis Technology Corporation |
Coated wafer holding pin
|
US6155436A
(en)
*
|
1999-08-18 |
2000-12-05 |
Ibis Technology Corporation |
Arc inhibiting wafer holder assembly
|
US6452195B1
(en)
|
1999-08-18 |
2002-09-17 |
Ibis Technology Corporation |
Wafer holding pin
|
US6504159B1
(en)
*
|
1999-09-14 |
2003-01-07 |
International Business Machines Corporation |
SOI plasma source ion implantation
|
US6403967B1
(en)
*
|
1999-10-15 |
2002-06-11 |
Advanced Ion Beam Technology, Inc. |
Magnet system for an ion beam implantation system using high perveance beams
|
US7838850B2
(en)
*
|
1999-12-13 |
2010-11-23 |
Semequip, Inc. |
External cathode ion source
|
JP4820038B2
(ja)
*
|
1999-12-13 |
2011-11-24 |
セメクイップ, インコーポレイテッド |
イオン注入イオン源、システム、および方法
|
US6710358B1
(en)
*
|
2000-02-25 |
2004-03-23 |
Advanced Ion Beam Technology, Inc. |
Apparatus and method for reducing energy contamination of low energy ion beams
|
US6489622B1
(en)
*
|
2000-03-01 |
2002-12-03 |
Advanced Ion Beam Technology, Inc. |
Apparatus for decelerating ion beams with minimal energy contamination
|
US6677599B2
(en)
*
|
2000-03-27 |
2004-01-13 |
Applied Materials, Inc. |
System and method for uniformly implanting a wafer with an ion beam
|
US6661016B2
(en)
|
2000-06-22 |
2003-12-09 |
Proteros, Llc |
Ion implantation uniformity correction using beam current control
|
RU2164718C1
(ru)
*
|
2000-07-04 |
2001-03-27 |
Общество с ограниченной ответственностью "Агентство маркетинга научных разработок" |
Установка для формирования наноструктур на поверхности полупроводниковых пластин ионными пучками
|
WO2002021565A2
(en)
*
|
2000-09-07 |
2002-03-14 |
Diamond Semiconductor Group, Inc. |
Apparatus for magnetically scanning and/or switching a charged-particle beam
|
US7547460B2
(en)
*
|
2000-09-15 |
2009-06-16 |
Varian Semiconductor Equipment Associates, Inc. |
Ion implanter optimizer scan waveform retention and recovery
|
US6573518B1
(en)
*
|
2000-10-30 |
2003-06-03 |
Varian Semiconductor Equipment Associates, Inc. |
Bi mode ion implantation with non-parallel ion beams
|
WO2002054442A2
(en)
*
|
2000-12-28 |
2002-07-11 |
Proteros, Llc |
Ion beam collimating system
|
US6614190B2
(en)
*
|
2001-01-31 |
2003-09-02 |
Hitachi, Ltd. |
Ion implanter
|
US6664740B2
(en)
|
2001-02-01 |
2003-12-16 |
The Regents Of The University Of California |
Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma
|
EP1282900B8
(en)
*
|
2001-02-06 |
2011-01-26 |
GSI Helmholtzzentrum für Schwerionenforschung GmbH |
Beam scanning system for a heavy ion gantry
|
US6611106B2
(en)
*
|
2001-03-19 |
2003-08-26 |
The Regents Of The University Of California |
Controlled fusion in a field reversed configuration and direct energy conversion
|
US7323700B1
(en)
|
2001-04-02 |
2008-01-29 |
Applied Materials, Inc. |
Method and system for controlling beam scanning in an ion implantation device
|
US7419949B2
(en)
*
|
2001-07-16 |
2008-09-02 |
Novo Noridsk Healthcare A/G |
Single-dose administration of factor VIIa
|
JP3941434B2
(ja)
*
|
2001-08-09 |
2007-07-04 |
日新イオン機器株式会社 |
イオン注入装置およびその運転方法
|
JP3692999B2
(ja)
*
|
2001-10-26 |
2005-09-07 |
日新イオン機器株式会社 |
イオン注入方法およびその装置
|
GB2395354B
(en)
*
|
2002-11-11 |
2005-09-28 |
Applied Materials Inc |
Ion implanter and a method of implanting ions
|
US6767809B2
(en)
*
|
2002-11-19 |
2004-07-27 |
Silterra Malayisa Sdn. Bhd. |
Method of forming ultra shallow junctions
|
US7078713B2
(en)
*
|
2003-03-28 |
2006-07-18 |
White Nicholas R |
Electromagnetic regulator assembly for adjusting and controlling the current uniformity of continuous ion beams
|
US6770888B1
(en)
*
|
2003-05-15 |
2004-08-03 |
Axcelis Technologies, Inc. |
High mass resolution magnet for ribbon beam ion implanters
|
US6881966B2
(en)
*
|
2003-05-15 |
2005-04-19 |
Axcelis Technologies, Inc. |
Hybrid magnetic/electrostatic deflector for ion implantation systems
|
US20060043316A1
(en)
*
|
2003-06-10 |
2006-03-02 |
Varian Semiconductor Equipment Associates, Inc. |
Ion implanter having enhanced low energy ion beam transport
|
US7112809B2
(en)
*
|
2003-06-26 |
2006-09-26 |
Axcelis Technologies, Inc. |
Electrostatic lens for ion beams
|
US7105839B2
(en)
*
|
2003-10-15 |
2006-09-12 |
White Nicholas R |
Method and fine-control collimator for accurate collimation and precise parallel alignment of scanned ion beams
|
US7019522B1
(en)
*
|
2004-01-23 |
2006-03-28 |
Advanced Design Consulting Usa |
Apparatus for measuring the magnetic field produced by an insertion device
|
US6984832B2
(en)
*
|
2004-04-15 |
2006-01-10 |
Axcelis Technologies, Inc. |
Beam angle control in a batch ion implantation system
|
US7112789B2
(en)
*
|
2004-05-18 |
2006-09-26 |
White Nicholas R |
High aspect ratio, high mass resolution analyzer magnet and system for ribbon ion beams
|
US7902527B2
(en)
*
|
2004-05-18 |
2011-03-08 |
Jiong Chen |
Apparatus and methods for ion beam implantation using ribbon and spot beams
|
US6903350B1
(en)
*
|
2004-06-10 |
2005-06-07 |
Axcelis Technologies, Inc. |
Ion beam scanning systems and methods for improved ion implantation uniformity
|
US20060017010A1
(en)
*
|
2004-07-22 |
2006-01-26 |
Axcelis Technologies, Inc. |
Magnet for scanning ion beams
|
US7462951B1
(en)
|
2004-08-11 |
2008-12-09 |
Access Business Group International Llc |
Portable inductive power station
|
US7019314B1
(en)
*
|
2004-10-18 |
2006-03-28 |
Axcelis Technologies, Inc. |
Systems and methods for ion beam focusing
|
US7408324B2
(en)
*
|
2004-10-27 |
2008-08-05 |
Access Business Group International Llc |
Implement rack and system for energizing implements
|
US7414249B2
(en)
*
|
2004-11-30 |
2008-08-19 |
Purser Kenneth H |
Broad energy-range ribbon ion beam collimation using a variable-gradient dipole
|
JP4964413B2
(ja)
*
|
2004-11-30 |
2012-06-27 |
株式会社Sen |
イオンビーム/荷電粒子ビーム照射装置
|
US7173260B2
(en)
*
|
2004-12-22 |
2007-02-06 |
Axcelis Technologies, Inc. |
Removing byproducts of physical and chemical reactions in an ion implanter
|
US7005657B1
(en)
|
2005-02-04 |
2006-02-28 |
Varian Semiconductor Equipment Associates, Inc. |
Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery
|
US9607719B2
(en)
*
|
2005-03-07 |
2017-03-28 |
The Regents Of The University Of California |
Vacuum chamber for plasma electric generation system
|
US9123512B2
(en)
|
2005-03-07 |
2015-09-01 |
The Regents Of The Unviersity Of California |
RF current drive for plasma electric generation system
|
US8031824B2
(en)
*
|
2005-03-07 |
2011-10-04 |
Regents Of The University Of California |
Inductive plasma source for plasma electric generation system
|
JP2006279041A
(ja)
*
|
2005-03-22 |
2006-10-12 |
Applied Materials Inc |
イオンビームを使用する基板への注入
|
KR100653999B1
(ko)
*
|
2005-06-29 |
2006-12-06 |
주식회사 하이닉스반도체 |
와이드빔을 이용한 불균일 이온주입장치 및 이온주입방법
|
US7674687B2
(en)
*
|
2005-07-27 |
2010-03-09 |
Silicon Genesis Corporation |
Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
|
US7435977B2
(en)
*
|
2005-12-12 |
2008-10-14 |
Axcelis Technologies, Inc. |
Ion beam angle measurement systems and methods for ion implantation systems
|
US7476876B2
(en)
*
|
2005-12-21 |
2009-01-13 |
Axcelis Technologies, Inc. |
Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems
|
KR100656955B1
(ko)
*
|
2005-12-30 |
2006-12-14 |
삼성전자주식회사 |
이온 임플랜터의 이온 발생 장치
|
US7863157B2
(en)
*
|
2006-03-17 |
2011-01-04 |
Silicon Genesis Corporation |
Method and structure for fabricating solar cells using a layer transfer process
|
WO2007118121A2
(en)
|
2006-04-05 |
2007-10-18 |
Silicon Genesis Corporation |
Method and structure for fabricating solar cells using a layer transfer process
|
KR20090010067A
(ko)
*
|
2006-04-26 |
2009-01-28 |
액셀리스 테크놀러지스, 인크. |
이온 빔 미립자들의 포획 및 이온 빔 포커싱을 위한 방법 및 시스템
|
TWI435378B
(zh)
*
|
2006-04-26 |
2014-04-21 |
Axcelis Tech Inc |
劑量均勻性校正方法
|
JP5560036B2
(ja)
*
|
2006-06-12 |
2014-07-23 |
アクセリス テクノロジーズ, インコーポレイテッド |
イオン注入装置におけるビーム角調節
|
KR20090018816A
(ko)
*
|
2006-06-13 |
2009-02-23 |
세미이큅, 인코포레이티드 |
이온 주입을 위한 자기 분석기 장치 및 방법
|
US7851773B2
(en)
*
|
2006-06-13 |
2010-12-14 |
Semiquip, Inc. |
Ion beam apparatus and method employing magnetic scanning
|
US8153513B2
(en)
*
|
2006-07-25 |
2012-04-10 |
Silicon Genesis Corporation |
Method and system for continuous large-area scanning implantation process
|
US7227160B1
(en)
*
|
2006-09-13 |
2007-06-05 |
Axcelis Technologies, Inc. |
Systems and methods for beam angle adjustment in ion implanters
|
US7476855B2
(en)
*
|
2006-09-19 |
2009-01-13 |
Axcelis Technologies, Inc. |
Beam tuning with automatic magnet pole rotation for ion implanters
|
US7507978B2
(en)
*
|
2006-09-29 |
2009-03-24 |
Axcelis Technologies, Inc. |
Beam line architecture for ion implanter
|
US7683347B2
(en)
*
|
2006-09-29 |
2010-03-23 |
Varian Semiconductor Equipment Associates, Inc. |
Technique for improving ion implantation throughput and dose uniformity
|
WO2008053879A1
(fr)
*
|
2006-10-30 |
2008-05-08 |
Japan Aviation Electronics Industry Limited |
Procédé d'aplanissement d'une surface solide avec un faisceau ionique d'agrégats gazeux, et dispositif d'aplanissement de surface solide
|
US7453069B2
(en)
*
|
2006-12-06 |
2008-11-18 |
Varian Semiconductor Equipment Associates, Inc. |
Bushing unit with integrated conductor in ion accelerating device and related method
|
US7750320B2
(en)
*
|
2006-12-22 |
2010-07-06 |
Axcelis Technologies, Inc. |
System and method for two-dimensional beam scan across a workpiece of an ion implanter
|
US8698093B1
(en)
*
|
2007-01-19 |
2014-04-15 |
Kla-Tencor Corporation |
Objective lens with deflector plates immersed in electrostatic lens field
|
KR100804133B1
(ko)
|
2007-02-22 |
2008-02-19 |
한국원자력연구원 |
시케인 자석을 이용한 음이온 인출필터
|
FR2917753B1
(fr)
*
|
2007-06-20 |
2011-05-06 |
Quertech Ingenierie |
Dispositif multi-sources rce pour le traitement de pieces par implantation ionique et procede le mettant en oeuvre
|
DE102007033894B3
(de)
*
|
2007-07-20 |
2008-12-11 |
Siemens Ag |
Partikelstrahlapplikationsvorrichtung, Bestrahlungsvorrichtung sowie Verfahren zur Führung eines Partikelstrahls
|
US7956557B1
(en)
*
|
2007-09-11 |
2011-06-07 |
Advanced Design Consulting Usa, Inc. |
Support structures for planar insertion devices
|
US20090206275A1
(en)
*
|
2007-10-03 |
2009-08-20 |
Silcon Genesis Corporation |
Accelerator particle beam apparatus and method for low contaminate processing
|
US8089055B2
(en)
*
|
2008-02-05 |
2012-01-03 |
Adam Alexander Brailove |
Ion beam processing apparatus
|
US7977628B2
(en)
*
|
2008-06-25 |
2011-07-12 |
Axcelis Technologies, Inc. |
System and method for reducing particles and contamination by matching beam complementary aperture shapes to beam shapes
|
US8678008B2
(en)
*
|
2008-07-30 |
2014-03-25 |
Ethicon, Inc |
Methods and devices for forming an auxiliary airway for treating obstructive sleep apnea
|
US8556797B2
(en)
*
|
2008-07-31 |
2013-10-15 |
Ethicon, Inc. |
Magnetic implants for treating obstructive sleep apnea and methods therefor
|
US8413661B2
(en)
|
2008-08-14 |
2013-04-09 |
Ethicon, Inc. |
Methods and devices for treatment of obstructive sleep apnea
|
US20100065761A1
(en)
*
|
2008-09-17 |
2010-03-18 |
Axcelis Technologies, Inc. |
Adjustable deflection optics for ion implantation
|
US8561616B2
(en)
|
2008-10-24 |
2013-10-22 |
Ethicon, Inc. |
Methods and devices for the indirect displacement of the hyoid bone for treating obstructive sleep apnea
|
US8561617B2
(en)
|
2008-10-30 |
2013-10-22 |
Ethicon, Inc. |
Implant systems and methods for treating obstructive sleep apnea
|
US8800567B2
(en)
|
2008-12-01 |
2014-08-12 |
Ethicon, Inc. |
Implant systems and methods for treating obstructive sleep apnea
|
US8783258B2
(en)
|
2008-12-01 |
2014-07-22 |
Ethicon, Inc. |
Implant systems and methods for treating obstructive sleep apnea
|
US8371308B2
(en)
*
|
2009-02-17 |
2013-02-12 |
Ethicon, Inc. |
Magnetic implants and methods for treating an oropharyngeal condition
|
US8307831B2
(en)
|
2009-03-16 |
2012-11-13 |
Ethicon, Inc. |
Implant systems and methods for treating obstructive sleep apnea
|
JP5603647B2
(ja)
*
|
2009-05-13 |
2014-10-08 |
キヤノン株式会社 |
給電装置、給電装置の制御方法及び給電通信システム
|
JP5597022B2
(ja)
|
2009-05-13 |
2014-10-01 |
キヤノン株式会社 |
給電装置、及び制御方法
|
CN102510656A
(zh)
*
|
2009-05-22 |
2012-06-20 |
同方威视技术股份有限公司 |
在电子辐照加速器中使用的扫描磁铁装置
|
US9877862B2
(en)
*
|
2009-10-29 |
2018-01-30 |
Ethicon, Inc. |
Tongue suspension system with hyoid-extender for treating obstructive sleep apnea
|
US9326886B2
(en)
|
2009-10-29 |
2016-05-03 |
Ethicon, Inc. |
Fluid filled implants for treating obstructive sleep apnea
|
US9974683B2
(en)
*
|
2009-10-30 |
2018-05-22 |
Ethicon, Inc. |
Flexible implants having internal volume shifting capabilities for treating obstructive sleep apnea
|
DE102009052392A1
(de)
*
|
2009-11-09 |
2011-12-15 |
Carl Zeiss Nts Gmbh |
SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens
|
DE102009057486A1
(de)
*
|
2009-12-10 |
2011-06-16 |
Ferrotec Gmbh |
Ablenkvorrichtung für Elektronenstrahlen, magnetische Ablenkeinheit für eine solche Ablenkvorrichtung und Vorrichtung zum Bedampfen eines flächigen Substrates mit einer solchen Ablenkvorrichtung
|
US8632488B2
(en)
|
2009-12-15 |
2014-01-21 |
Ethicon, Inc. |
Fluid filled implants for treating medical conditions
|
DE102010009010A1
(de)
*
|
2010-02-24 |
2011-08-25 |
Siemens Aktiengesellschaft, 80333 |
Bestrahlungsvorrichtung und Bestrahlungsverfahren zur Deposition einer Dosis in einem Zielvolumen
|
US8138484B2
(en)
|
2010-04-28 |
2012-03-20 |
Axcelis Technologies Inc. |
Magnetic scanning system with improved efficiency
|
US8481960B2
(en)
*
|
2010-06-28 |
2013-07-09 |
Varian Semiconductor Equipment Associates, Inc. |
Deceleration lens
|
KR101915753B1
(ko)
*
|
2010-10-21 |
2018-11-07 |
삼성디스플레이 주식회사 |
이온 주입 시스템 및 이를 이용한 이온 주입 방법
|
US8905033B2
(en)
|
2011-09-28 |
2014-12-09 |
Ethicon, Inc. |
Modular tissue securement systems
|
US9161855B2
(en)
|
2011-10-24 |
2015-10-20 |
Ethicon, Inc. |
Tissue supporting device and method
|
US20130114773A1
(en)
*
|
2011-11-08 |
2013-05-09 |
Alexander R. Vaucher |
Superconducting neutron source
|
PT3223284T
(pt)
|
2011-11-14 |
2019-05-30 |
Univ California |
Processos de formação e de manutenção de um frc de elevado desempenho
|
US8973582B2
(en)
|
2011-11-30 |
2015-03-10 |
Ethicon, Inc. |
Tongue suspension device and method
|
US10470760B2
(en)
|
2011-12-08 |
2019-11-12 |
Ethicon, Inc. |
Modified tissue securement fibers
|
US9173766B2
(en)
|
2012-06-01 |
2015-11-03 |
Ethicon, Inc. |
Systems and methods to treat upper pharyngeal airway of obstructive sleep apnea patients
|
US9484176B2
(en)
*
|
2012-09-10 |
2016-11-01 |
Thomas Schenkel |
Advanced penning ion source
|
US8994272B2
(en)
|
2013-03-15 |
2015-03-31 |
Nissin Ion Equipment Co., Ltd. |
Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereof
|
US9275819B2
(en)
*
|
2013-03-15 |
2016-03-01 |
Nissin Ion Equipment Co., Ltd. |
Magnetic field sources for an ion source
|
US9502213B2
(en)
|
2013-03-15 |
2016-11-22 |
Nissin Ion Equipment Co., Ltd. |
Ion beam line
|
US9865422B2
(en)
|
2013-03-15 |
2018-01-09 |
Nissin Ion Equipment Co., Ltd. |
Plasma generator with at least one non-metallic component
|
JP5989613B2
(ja)
*
|
2013-08-21 |
2016-09-07 |
住友重機械イオンテクノロジー株式会社 |
イオン注入装置、磁場測定装置、及びイオン注入方法
|
BR112016006680B1
(pt)
|
2013-09-24 |
2021-01-26 |
Tae Technologies, Inc. |
método para geração e manutenção de um campo magnético
|
US9029811B1
(en)
|
2013-10-22 |
2015-05-12 |
Varian Semiconductor Equipment Associates, Inc. |
Apparatus to control an ion beam
|
US8993980B1
(en)
|
2013-10-22 |
2015-03-31 |
Varian Semiconductor Equipment Associates, Inc. |
Dual stage scanner for ion beam control
|
US9218941B2
(en)
|
2014-01-15 |
2015-12-22 |
Axcelis Technologies, Inc. |
Ion implantation system and method with variable energy control
|
US9214318B1
(en)
|
2014-07-25 |
2015-12-15 |
International Business Machines Corporation |
Electromagnetic electron reflector
|
HRP20211230T1
(hr)
|
2014-10-13 |
2022-01-21 |
Tae Technologies, Inc. |
Postupak za fuzioniranje i komprimiranje kompaktnih torusa
|
JP6613466B2
(ja)
*
|
2014-10-28 |
2019-12-04 |
国立研究開発法人量子科学技術研究開発機構 |
荷電粒子ビーム照射装置
|
PT3589083T
(pt)
|
2014-10-30 |
2022-10-11 |
Tae Tech Inc |
Sistemas e métodos para formação e manutenção de um frc de alto desempenho
|
US9620327B2
(en)
*
|
2014-12-26 |
2017-04-11 |
Axcelis Technologies, Inc. |
Combined multipole magnet and dipole scanning magnet
|
SI3295459T1
(sl)
|
2015-05-12 |
2021-04-30 |
Tae Technologies, Inc. |
Sistemi in postopki za zmanjšanje neželenih vrtinčnih tokov
|
US9697988B2
(en)
*
|
2015-10-14 |
2017-07-04 |
Advanced Ion Beam Technology, Inc. |
Ion implantation system and process
|
US9679745B2
(en)
*
|
2015-10-14 |
2017-06-13 |
Varian Semiconductor Equipment Associates, Inc. |
Controlling an ion beam in a wide beam current operation range
|
CN108352199B
(zh)
|
2015-11-13 |
2022-09-09 |
阿尔法能源技术公司 |
用于frc等离子体位置稳定性的系统和方法
|
JP6489322B2
(ja)
*
|
2016-04-28 |
2019-03-27 |
日新イオン機器株式会社 |
イオンビームエッチング装置
|
WO2018047272A1
(ja)
*
|
2016-09-08 |
2018-03-15 |
三菱電機株式会社 |
走査電磁石、および走査電磁石を備えた粒子線照射装置の製造方法
|
WO2018081724A1
(en)
|
2016-10-28 |
2018-05-03 |
Tae Technologies, Inc. |
Systems and methods for improved sustainment of a high performance frc elevated energies utilizing neutral beam injectors with tunable beam energies
|
KR20190073544A
(ko)
|
2016-11-04 |
2019-06-26 |
티에이이 테크놀로지스, 인크. |
다중 스케일 포집 타입 진공 펌핑을 갖는 고성능 frc의 개선된 지속성을 위한 시스템들 및 방법들
|
EP3542600A1
(en)
|
2016-11-15 |
2019-09-25 |
TAE Technologies, Inc. |
Systems and methods for improved sustainment of a high performance frc and high harmonic fast wave electron heating in a high performance frc
|
EP3577678B1
(en)
*
|
2017-02-03 |
2023-01-18 |
Gatan Inc. |
Harmonic line noise correction for electron energy loss spectrometer
|
US11114270B2
(en)
*
|
2018-08-21 |
2021-09-07 |
Axcelis Technologies, Inc. |
Scanning magnet design with enhanced efficiency
|
SE543634C2
(en)
*
|
2019-01-31 |
2021-04-27 |
Mb Scient |
Spin manipulator for use in electron spectroscopy
|
JP2020141944A
(ja)
*
|
2019-03-08 |
2020-09-10 |
住友重機械工業株式会社 |
走査電磁石
|
JP7236894B2
(ja)
*
|
2019-03-20 |
2023-03-10 |
住友重機械工業株式会社 |
荷電粒子線治療装置
|
US20230038392A1
(en)
|
2021-08-05 |
2023-02-09 |
Axcelis Technologies, Inc. |
Blended energy ion implantation
|
CN117941024A
(zh)
|
2021-08-05 |
2024-04-26 |
艾克塞利斯科技公司 |
混合能量离子注入
|
JP2023164060A
(ja)
*
|
2022-04-28 |
2023-11-10 |
キヤノン株式会社 |
電磁装置、位置合わせ装置および物品製造方法
|