KR950034587A - 기판 및 산화 갈륨 박막을 구비한 구조물 제조 공정 - Google Patents

기판 및 산화 갈륨 박막을 구비한 구조물 제조 공정 Download PDF

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Publication number
KR950034587A
KR950034587A KR1019950004863A KR19950004863A KR950034587A KR 950034587 A KR950034587 A KR 950034587A KR 1019950004863 A KR1019950004863 A KR 1019950004863A KR 19950004863 A KR19950004863 A KR 19950004863A KR 950034587 A KR950034587 A KR 950034587A
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KR
South Korea
Prior art keywords
thin film
substrate
temperature
semiconductor
torr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019950004863A
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English (en)
Korean (ko)
Inventor
에드먼드 제임스 헌트 닐
파스락 매티어스
프레데릭 슈베르트 에르드만
죤 자이직 죠지
Original Assignee
오레그 이. 앨버
에이 티 앤드 티 코포레이션
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Application filed by 오레그 이. 앨버, 에이 티 앤드 티 코포레이션 filed Critical 오레그 이. 앨버
Publication of KR950034587A publication Critical patent/KR950034587A/ko
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H10P14/60—
    • H10D64/011—
    • H10D64/01358—
    • H10P14/6332—
    • H10P14/6939—
    • H10W20/48—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
  • Inorganic Insulating Materials (AREA)
KR1019950004863A 1994-03-23 1995-03-10 기판 및 산화 갈륨 박막을 구비한 구조물 제조 공정 Withdrawn KR950034587A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US217,296 1994-03-23
US08/217,296 US5451548A (en) 1994-03-23 1994-03-23 Electron beam deposition of gallium oxide thin films using a single high purity crystal source

Publications (1)

Publication Number Publication Date
KR950034587A true KR950034587A (ko) 1995-12-28

Family

ID=22810461

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950004863A Withdrawn KR950034587A (ko) 1994-03-23 1995-03-10 기판 및 산화 갈륨 박막을 구비한 구조물 제조 공정

Country Status (6)

Country Link
US (1) US5451548A (cg-RX-API-DMAC10.html)
EP (1) EP0674344A3 (cg-RX-API-DMAC10.html)
JP (1) JP3299657B2 (cg-RX-API-DMAC10.html)
KR (1) KR950034587A (cg-RX-API-DMAC10.html)
CA (1) CA2136581C (cg-RX-API-DMAC10.html)
TW (1) TW266330B (cg-RX-API-DMAC10.html)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5962883A (en) * 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
US5912498A (en) * 1997-10-10 1999-06-15 Lucent Technologies Inc. Article comprising an oxide layer on GAN
DE4428155C2 (de) * 1994-08-09 1996-12-19 Siemens Ag Verfahren zur Herstellung eines Gassensors
US5597768A (en) * 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5665658A (en) * 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5903037A (en) * 1997-02-24 1999-05-11 Lucent Technologies Inc. GaAs-based MOSFET, and method of making same
US6030453A (en) * 1997-03-04 2000-02-29 Motorola, Inc. III-V epitaxial wafer production
US5904553A (en) * 1997-08-25 1999-05-18 Motorola, Inc. Fabrication method for a gate quality oxide-compound semiconductor structure
US6025281A (en) * 1997-12-18 2000-02-15 Motorola, Inc. Passivation of oxide-compound semiconductor interfaces
US6159834A (en) * 1998-02-12 2000-12-12 Motorola, Inc. Method of forming a gate quality oxide-compound semiconductor structure
US5945718A (en) * 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US6094295A (en) * 1998-02-12 2000-07-25 Motorola, Inc. Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
US6495407B1 (en) 1998-09-18 2002-12-17 Agere Systems Inc. Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
SG85604A1 (en) * 1998-11-06 2002-01-15 Inst Materials Research & Eng Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof
US6521961B1 (en) 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
US6445015B1 (en) 2000-05-04 2002-09-03 Osemi, Incorporated Metal sulfide semiconductor transistor devices
US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6670651B1 (en) 2000-05-04 2003-12-30 Osemi, Inc. Metal sulfide-oxide semiconductor transistor devices
US6451711B1 (en) * 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US7442654B2 (en) * 2002-01-18 2008-10-28 Freescale Semiconductor, Inc. Method of forming an oxide layer on a compound semiconductor structure
AU2003217189A1 (en) * 2002-01-22 2003-09-02 Massachusetts Institute Of Technology A method of fabrication for iii-v semiconductor surface passivation
US7326446B2 (en) * 2002-04-15 2008-02-05 Schott Ag Method for coating metal surfaces and substrate having a coated metal surface
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
JP3763021B2 (ja) * 2003-05-26 2006-04-05 学校法人関西学院 電子ビーム微細加工方法
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
US20080282983A1 (en) * 2003-12-09 2008-11-20 Braddock Iv Walter David High Temperature Vacuum Evaporation Apparatus
US7223441B2 (en) * 2004-03-10 2007-05-29 Pilkington North America, Inc. Method for depositing gallium oxide coatings on flat glass
JP2007134445A (ja) * 2005-11-09 2007-05-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
JP3950473B2 (ja) * 2006-11-06 2007-08-01 シャープ株式会社 化合物半導体レーザ
US20080157073A1 (en) * 2006-12-29 2008-07-03 Walter David Braddock Integrated Transistor Devices
DE102008020793A1 (de) 2008-04-22 2009-11-05 Forschungsverbund Berlin E.V. Halbleiterbauelement, Vorprodukt und Verfahren zur Herstellung
KR101881729B1 (ko) * 2010-04-16 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 반도체 장치를 제작하기 위한 방법
WO2011158704A1 (en) * 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA920285A (en) * 1970-11-30 1973-01-30 L. Hartman Robert Extending the operating life of light emitting p-n junction devices
US4617192A (en) * 1982-12-21 1986-10-14 At&T Bell Laboratories Process for making optical INP devices
US4749255A (en) * 1985-12-09 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Coating for optical devices
DE4321301A1 (de) * 1992-07-06 1994-01-13 Zeiss Carl Fa Dünne Schicht aus Galliumoxid und Herstellverfahren dafür

Also Published As

Publication number Publication date
CA2136581A1 (en) 1995-09-24
US5451548A (en) 1995-09-19
JP3299657B2 (ja) 2002-07-08
TW266330B (cg-RX-API-DMAC10.html) 1995-12-21
JPH07268609A (ja) 1995-10-17
EP0674344A3 (en) 1996-10-16
CA2136581C (en) 1998-08-04
EP0674344A2 (en) 1995-09-27

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PG1501 Laying open of application

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R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

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P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000