KR950027994A - 유전체막의 기상성장 및 이러한 유전체막을 사용한 반도체 장치의 제조방법 - Google Patents

유전체막의 기상성장 및 이러한 유전체막을 사용한 반도체 장치의 제조방법 Download PDF

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KR950027994A
KR950027994A KR1019950003335A KR19950003335A KR950027994A KR 950027994 A KR950027994 A KR 950027994A KR 1019950003335 A KR1019950003335 A KR 1019950003335A KR 19950003335 A KR19950003335 A KR 19950003335A KR 950027994 A KR950027994 A KR 950027994A
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기무라 다까후미
야마우찌 히데아끼
나까바야시 마사아끼
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세끼사와 다다시
후지쓰 가부시끼가이샤
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Abstract

Sr를 포함하는 유전체막을 기판상에 퇴적하는 기상성장방법은 Sr((CH3)5C5)2를 포함하는 Sr화합물을 유기용매로 용해하거나 Sr(thd)2와 아민화합물을 혼합하여 원료를 형성하고, 원료를 기화시켜서 기체원료를 형성하며, 기화단계에서 얻어진 기체원료를 반응실 중에 보지된 기판표면의 근방에 분해시켜 Sr를 포함하는 유전체막을 기판표면에 퇴적하는 단계를 포함한다.

Description

유전체막의 기상성장 및 이러한 유전체막을 사용한 반도체 장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 사용된 CVD장치의 구성을 도시한 도,
제2도는 제1도의 본 발명의 요부를 도시한 도,
제3도는 본 발명의 제1실시예에 의해 얻어진 유전체막 XRF패턴을 도시한 도.

Claims (17)

  1. Sr를 포함하는 유전체막을 기판상에 퇴적하는 기상성장방법에 있어서, Sr((CH3)5C5)2를 포함하는 Sr화합물을 유기용매로 용해하여, 액체원료를 형성하고, 상기 액체원료를 기화시켜서 기체원료를 형성하며, 상기 기화단계에서 얻어진 상기 기체원료를 빈응실중에 보지된 기판표면의 근방에 분해시켜, 상기 기판표면에 Sr를 포함하는 유전체막을 퇴적하는 단계로 구성하는 기상성장방법.
  2. 제1항에 있어서, 상기 유기용매가 테트라하이드로푸란(THF), 아세톤, 크실렌, 아세트산과 그 화합물, 톨루엔, 및 벤젠으로 구성되는 군에서 선택되는 기상성장방법.
  3. 제1항에 있어서, 상기 Sr화합물이 Sr((CH3)5C5)2를 안정화시키는 부가물을 포함하는 기상성장방법.
  4. 제3항에 있어서, 상기 부가물이 테트라하이드로푸란으로 구성되는 기상성장방법.
  5. 제1항에 있어서, 상기 Sr((CH3)5C5)2(THF)의 구조식을 갖는 기상성장방법.
  6. 제1항에 있어서, 상기 용해단계가 상기 Sr화합물을 0.01∼0.09mol/l의 농도로 상기 유기용매중에 포함하도록 행해지는 기상성장방법.
  7. 제1항에 있어서, 상기 기화단계가 100∼150℃의 온도에서 상기 기체원료를 기화시키는 기상성장방법.
  8. 제1항에 있어서, 상기 기화단계가 상기 기체원료가 0.01∼150Torr의 부분압을 갖도록 행해지는 기상성장방법.
  9. 제1항에 있어서, 상기 반응실중에 상기 기체원료와 실질적으로 동시에 Ti의 유기금속착물을 공급하는 단계로 더 구성되어, 상기 기체원료를 분해하는 단계가 Sr1TO3의 조성을 갖는 유전체막을 상기 기판에 퇴적하는 기상성장방법.
  10. 제1항에 있어서, 상기 반응실중에 상기 기체원료와 실질적으로 동시에 Ti의 유기 금속착물과 Ba의 베르너착물을 공급하는 단계로 더 구성되어, 상기 기체원료를 분해하는 단계가 (Sr, Ba)TiO3의 조성을 갖는 유전체막을 상기 기판에 퇴적하는 기상성장방법.
  11. Sr를 포함하는 유전체막을 기판상에 퇴적하는 기상성장방법에 있어서, Sr(thd)2를 아민 화합물과 혼합하여 혼합물을 형성하고, 상기 혼합물을 기화시켜서 기체원료를 형성하며, 상기 기체원료를 반응실중에 보지된 기판표면의 근방에 분해시켜 Sr를 포함하는 유전체막을 상기 기판에 퇴적하는 기상성장방법.
  12. 제11항에 있어서, 상기 아민화합물이 트리에틸렌테트라아민, 테트라에틸렌펜타이민, 디에틸렌트리아민, 펜타에틸렌헥사아민, 및 2, 2', 2"-트리아미노르 리에틸아민으로 구성되는 군에서 선택되는 기상성장방법.
  13. 제11항에 있어서, 상기 기화단계 100∼150℃의 온도에서 상기 기체원료를 기화시키는 기상성장방법.
  14. 제11항에 있어서, 상기 혼합단계가 상기 아민화합물을 Sr(thd)21몰에 대하여 2이상의 몰로 혼합하도록 행해지는 기상성장방법.
  15. 제14항에 있어서, 상기 혼합단계가 Sr(thd)2와 상기 아민화합물의 부가물을 형성하도록 행해지는 기상성장방법.
  16. Sr를 포함하는 유전체막을 갖는 단도체 장치의 제조방법에 있어서, Sr((CH3)5C5)2를 포함하는 Sr화합물을 유기용매로 용해하며 액체원료를 형성하고, 상기 액체원료를 기화시켜서 기체원료를 형성하며, 상기 기화단계에서 얻어진 상기 기체원료를 반응실중에 보지된 기판표면의 근방에 분해시켜, Sr를 포함하는 유전체막을 상기 기판표면에 퇴적하는 단계로 구성되는 반도체 장치의 제조방법.
  17. Sr를 포함하는 유전체막을 갖는 반도체 장치의 제조방법에 있어서, Sr(thd)2를 아민화합물과 혼합하여 혼합물을 형성하고, 상기 혼합물을 기화시켜서 기체원료를 형성하며, 상기 기체원료를 반응실중에 보지된 기판표면의 근방에 분해시켜, Sr를 포함하는 유전체막을 상기 기판에 퇴적하는 단계로 구성되는 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950003335A 1994-03-09 1995-02-21 유전체막의 기상성장 및 이러한 유전체막을 사용한 반도체 장치의 제조방법 KR0154219B1 (ko)

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111122A (en) * 1998-04-28 2000-08-29 Advanced Technology Materials, Inc. Group II MOCVD source reagents, and method of forming Group II metal-containing films utilizing same
US6417115B1 (en) * 1998-05-26 2002-07-09 Axeclis Technologies, Inc. Treatment of dielectric materials
KR100289947B1 (ko) * 1998-09-28 2001-05-15 신현국 고유전성박막증착용전구체착화합물및그를이용한박막증착방법
US6191054B1 (en) * 1998-10-08 2001-02-20 Matsushita Electric Industrial Co., Ltd. Method for forming film and method for fabricating semiconductor device
JP2000353700A (ja) * 1999-06-14 2000-12-19 Mitsubishi Electric Corp 高誘電率薄膜の形成方法および半導体装置の製造方法
US6943392B2 (en) * 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
US6852473B2 (en) * 2000-01-12 2005-02-08 Infineon Technologies Richmond, Lp Anti-reflective coating conformality control
US6558517B2 (en) * 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6258735B1 (en) * 2000-10-05 2001-07-10 Applied Materials, Inc. Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber
US20030017266A1 (en) * 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US6838122B2 (en) * 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US7011978B2 (en) * 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
JP2005181222A (ja) * 2003-12-22 2005-07-07 Renesas Technology Corp 半導体装置の製造方法
WO2007005088A2 (en) * 2005-07-01 2007-01-11 Honeywell International Inc. Vaporizable metalorganic compounds for deposition of metals and metal-containing thin films
US7601629B2 (en) * 2005-12-20 2009-10-13 Texas Instruments Incorporated Semiconductive device fabricated using subliming materials to form interlevel dielectrics
JP2009529579A (ja) 2006-03-10 2009-08-20 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物
JP4524698B2 (ja) 2006-10-26 2010-08-18 エルピーダメモリ株式会社 容量素子を有する半導体装置及びその製造方法
JP5095230B2 (ja) 2007-01-24 2012-12-12 東京エレクトロン株式会社 ＳｒＴｉＯ３膜の成膜方法およびコンピュータ読取可能な記憶媒体
KR100953736B1 (ko) * 2009-07-27 2010-04-19 주식회사 아토 증착 장치 및 반도체 소자의 제조 방법
WO2012005957A2 (en) 2010-07-07 2012-01-12 Advanced Technology Materials, Inc. Doping of zro2 for dram applications
US9443736B2 (en) 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
WO2014124056A1 (en) 2013-02-08 2014-08-14 Advanced Technology Materials, Inc. Ald processes for low leakage current and low equivalent oxide thickness bitao films
KR102490079B1 (ko) * 2019-12-23 2023-01-17 삼성에스디아이 주식회사 유기금속 화합물, 유기금속 화합물을 포함하는 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA898183A (en) * 1970-05-25 1972-04-18 R. Bharucha Nanabhai Method of plating copper on aluminum
US4501602A (en) * 1982-09-15 1985-02-26 Corning Glass Works Process for making sintered glasses and ceramics
JPH0829943B2 (ja) * 1988-05-13 1996-03-27 沖電気工業株式会社 超伝導体薄膜の形成方法
JPH02225317A (ja) * 1989-02-23 1990-09-07 Asahi Glass Co Ltd 化学的気相蒸着法による酸化物超伝導体の製造方法
DE3907579A1 (de) * 1989-03-09 1990-09-13 Merck Patent Gmbh Verwendung von metallorganischen verbindungen zur abscheidung duenner filme aus der gasphase
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5362328A (en) * 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
JP3193411B2 (ja) * 1991-09-18 2001-07-30 日本酸素株式会社 化学気相析出用有機金属化合物の保存方法、および化学気相析出用の有機金属化合物溶液
DE4304679C2 (de) * 1992-02-17 1996-03-21 Mitsubishi Electric Corp Verfahren zur Herstellung einer dünnen dielektrischen Schicht eines Oxid-Systems unter Verwendung des CVD-Verfahrens
JP3231835B2 (ja) * 1992-04-14 2001-11-26 同和鉱業株式会社 有機金属錯体を用いる薄膜の製造法
JPH06157191A (ja) * 1992-11-13 1994-06-03 Dowa Mining Co Ltd 薄膜の製造方法
JPH086181B2 (ja) * 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置

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