KR950024302A - 반도체 구조체 및 반도체 구조체 제조 방법 - Google Patents
반도체 구조체 및 반도체 구조체 제조 방법 Download PDFInfo
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- KR950024302A KR950024302A KR1019940034071A KR19940034071A KR950024302A KR 950024302 A KR950024302 A KR 950024302A KR 1019940034071 A KR1019940034071 A KR 1019940034071A KR 19940034071 A KR19940034071 A KR 19940034071A KR 950024302 A KR950024302 A KR 950024302A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000002245 particle Substances 0.000 claims abstract 15
- 239000000758 substrate Substances 0.000 claims abstract 10
- 238000000151 deposition Methods 0.000 claims 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 230000002950 deficient Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- 238000004151 rapid thermal annealing Methods 0.000 claims 1
- 238000003303 reheating Methods 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000004807 localization Effects 0.000 abstract 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
소립자로 오염되기 쉬운 반도체 구조체의 제조 방법에는 소립자(12)가 반응온도(27, 28)에서 기판(10)과 선반응하는 단계가 포함된다. 입자(12)를 선반응 시키크로써, 입자가 다음 처리공정, 특히 게이트 유전층 형성공정중에 또다시 반응할 가능성을 크게 줄인다. 따라서, 구조체 표면의 나머지 부분 뿐아니라 선반응 입자도, 일정한 두께를 유지하는 양질의 등각 증착층(14)으로 덮힐 수 있다. 그에 따라 전위 국소화 고 누설 전류밀도 영역이 줄어든다. 또한, 통상적인 MOS 구조에서 두거운 필드 산화 영역(66)에 인접된 불합리하게 얇은 게이트 산화 영역(70)이 제거된다. 따라서 생산량 및 신뢰성이 증대된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 점진적인 처리 단계중의 반도체 구조체를 도시하는 단순화된 단면 측면도.
Claims (3)
- 반도체 기판(10)과; 상기 반도체 기판(10)상에 위치한 안정된 선반응 입자(13) 및; 상기 반도체 기판(10) 및 상기 안정된 선반응 입자(13) 위쪽에 놓이고, 상기 안정된 선반응 입자(10) 및, 상기 안정된 선반응 입자(13)와 인접한 상기 반도체 기판(10)상으로 실질상 일정 두께를 갖는 유전층을 포함하는 것을 특징으로 하는 반도체 구조체.
- 실질상 산소가 결핍된 분위기내에서, 입자(13)가 반응하기에 충분한 제1온도에서 상기 입자(13)가 그 입자 아래에 놓인 기판(10)과 반응하는 단계와; 그 다음에 유전체(14)을 증착하기에 적합한 제2온도로 상기 입자(13) 및 상기 기판(10)을 냉각하는 단계 및; 그 다음에, 상기 입자(13) 및 그 입자에 인접한 기판(10)위에 실지상 일정 두께로 유전층(14)을 증착시키는 단계를 포함하는 것을 특징으로 하는 반도체 구조체 제조 방법.
- 1000-1100℃의 온도 범위에서 2-5분 범위의 지속기간 동안 신속한 열적 어닐로 반도체 기판(10)을 반응시키는 단계와; 650-800℃ 범위의 온도에서 50-250Å 범위의 두께로 TEOS로부터 SiO2층(14)을 증착시키는 단계와; 적어도 10퍼센트의 산소를 함유한 분위기에서 5-30분 범위의 지속기간 동안 800-l000℃범위의 온도로 상기 반도체 기판(10) 및 상기 SiO2층(14)을 재가열하는 단계 및; 게이트를 형성하도록 상기 SiO2층(14) 위에 폴리실리콘(16)을 증착하는 단계를 포함하는 것을 특징으로 하는 반도체 구조체 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17815994A | 1994-01-06 | 1994-01-06 | |
US178,159 | 1994-01-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950024302A true KR950024302A (ko) | 1995-08-21 |
Family
ID=22651436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940034071A KR950024302A (ko) | 1994-01-06 | 1994-12-14 | 반도체 구조체 및 반도체 구조체 제조 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5908321A (ko) |
JP (1) | JPH07211907A (ko) |
KR (1) | KR950024302A (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6207591B1 (en) * | 1997-11-14 | 2001-03-27 | Kabushiki Kaisha Toshiba | Method and equipment for manufacturing semiconductor device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4309240A (en) * | 1980-05-16 | 1982-01-05 | Advanced Crystal Sciences, Inc. | Process for chemical vapor deposition of films on silicon wafers |
JPS6136936A (ja) * | 1984-07-30 | 1986-02-21 | Matsushita Electronics Corp | 半導体装置の製造方法 |
US4735919A (en) * | 1986-04-15 | 1988-04-05 | General Electric Company | Method of making a floating gate memory cell |
JPH0680657B2 (ja) * | 1989-12-27 | 1994-10-12 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法 |
US5024962A (en) * | 1990-04-20 | 1991-06-18 | Teledyne Industries, Inc. | Method for preventing auto-doping in the fabrication of metal gate CMOS devices |
JPH0719777B2 (ja) * | 1990-08-10 | 1995-03-06 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法 |
US5223443A (en) * | 1992-02-19 | 1993-06-29 | Integrated Device Technology, Inc. | Method for determining wafer cleanliness |
EP0582724A1 (de) * | 1992-08-04 | 1994-02-16 | Siemens Aktiengesellschaft | Verfahren zur lokal und global planarisierenden CVD-Abscheidung von SiO2-Schichten auf strukturierten Siliziumsubstraten |
US5322807A (en) * | 1992-08-19 | 1994-06-21 | At&T Bell Laboratories | Method of making thin film transistors including recrystallization and high pressure oxidation |
US5393708A (en) * | 1992-10-08 | 1995-02-28 | Industrial Technology Research Institute | Inter-metal-dielectric planarization process |
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1994
- 1994-12-14 KR KR1019940034071A patent/KR950024302A/ko not_active Application Discontinuation
- 1994-12-22 JP JP6335386A patent/JPH07211907A/ja active Pending
-
1997
- 1997-05-27 US US08/863,270 patent/US5908321A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH07211907A (ja) | 1995-08-11 |
US5908321A (en) | 1999-06-01 |
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