CN101425457B - 高介电常数栅极介电材料的形成方法与半导体元件 - Google Patents
高介电常数栅极介电材料的形成方法与半导体元件 Download PDFInfo
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- CN101425457B CN101425457B CN2008101738421A CN200810173842A CN101425457B CN 101425457 B CN101425457 B CN 101425457B CN 2008101738421 A CN2008101738421 A CN 2008101738421A CN 200810173842 A CN200810173842 A CN 200810173842A CN 101425457 B CN101425457 B CN 101425457B
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07119632.3 | 2007-10-30 | ||
EP07119632A EP2058844A1 (en) | 2007-10-30 | 2007-10-30 | Method of forming a semiconductor device |
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CN101425457A CN101425457A (zh) | 2009-05-06 |
CN101425457B true CN101425457B (zh) | 2011-04-06 |
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EP (1) | EP2058844A1 (zh) |
JP (1) | JP5203133B2 (zh) |
CN (1) | CN101425457B (zh) |
TW (1) | TWI482218B (zh) |
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KR20060072680A (ko) * | 2004-12-23 | 2006-06-28 | 주식회사 하이닉스반도체 | 반도체 장치의 커패시터 및 그 제조방법 |
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TWI408822B (zh) * | 2009-12-31 | 2013-09-11 | Lu Sheng Hong | Thin silicon solar cell and its manufacturing method |
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CN102468152B (zh) * | 2010-11-01 | 2013-12-04 | 中芯国际集成电路制造(上海)有限公司 | 栅介质层和晶体管的制作方法 |
US8735244B2 (en) | 2011-05-02 | 2014-05-27 | International Business Machines Corporation | Semiconductor device devoid of an interfacial layer and methods of manufacture |
US8492290B2 (en) * | 2011-06-21 | 2013-07-23 | International Business Machines Corporation | Fabrication of silicon oxide and oxynitride having sub-nanometer thickness |
CN103295891B (zh) * | 2012-03-02 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 栅介质层的制作方法、晶体管的制作方法 |
JP2014187238A (ja) * | 2013-03-25 | 2014-10-02 | Toyoda Gosei Co Ltd | Mis型半導体装置の製造方法 |
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CN104821276B (zh) * | 2014-01-30 | 2018-08-10 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管的制作方法 |
WO2016048377A1 (en) * | 2014-09-26 | 2016-03-31 | Intel Corporation | Metal oxide metal field effect transistors (momfets) |
JP6456764B2 (ja) * | 2015-04-28 | 2019-01-23 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
US10727055B2 (en) * | 2017-02-10 | 2020-07-28 | International Business Machines Corporation | Method to increase the lithographic process window of extreme ultra violet negative tone development resists |
US20210193468A1 (en) * | 2019-05-03 | 2021-06-24 | Applied Materials, Inc. | Treatments To Improve Device Performance |
CN116918034A (zh) * | 2021-03-04 | 2023-10-20 | 应用材料公司 | 用以改善装置效能的处理 |
CN115579279A (zh) | 2021-07-06 | 2023-01-06 | 联华电子股份有限公司 | 半导体装置制造过程中的清洁程序方法 |
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- 2008-10-29 CN CN2008101738421A patent/CN101425457B/zh active Active
- 2008-10-29 TW TW097141560A patent/TWI482218B/zh active
- 2008-10-30 US US12/261,728 patent/US9159582B2/en active Active
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Also Published As
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EP2058844A1 (en) | 2009-05-13 |
US20160035575A1 (en) | 2016-02-04 |
TWI482218B (zh) | 2015-04-21 |
JP2009170876A (ja) | 2009-07-30 |
US9799523B2 (en) | 2017-10-24 |
JP5203133B2 (ja) | 2013-06-05 |
US20090117750A1 (en) | 2009-05-07 |
TW200935518A (en) | 2009-08-16 |
CN101425457A (zh) | 2009-05-06 |
US9159582B2 (en) | 2015-10-13 |
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