KR950015583A - Storage electrode formation method of cylinder structure - Google Patents

Storage electrode formation method of cylinder structure Download PDF

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Publication number
KR950015583A
KR950015583A KR1019930023073A KR930023073A KR950015583A KR 950015583 A KR950015583 A KR 950015583A KR 1019930023073 A KR1019930023073 A KR 1019930023073A KR 930023073 A KR930023073 A KR 930023073A KR 950015583 A KR950015583 A KR 950015583A
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KR
South Korea
Prior art keywords
polycrystalline silicon
silicon film
storage electrode
forming
cylinder structure
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Application number
KR1019930023073A
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Korean (ko)
Inventor
이석현
이동덕
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930023073A priority Critical patent/KR950015583A/en
Publication of KR950015583A publication Critical patent/KR950015583A/en

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Abstract

본 발명은 반도체 소자의 저장전극 형성방법에 관한 것으로, 하부 산화막의 손실을 방지하고 제조공정의 단순화를 위하여, 하부 산화막 외의 다른 산화막을 사용하지 않고, 도핑된 폴리실리콘과 도핑되지 않은 폴리실리콘의 식각 속도차를 이용하여 도핑된 폴리 실리콘과 도핑되지 않은 폴리 실리콘막을 에치백함으로써. 편관 구조의 도핑된 폴리실리콘막과 원통형 구조의 도핑되지 않은 폴리실리콘막으로 형성된 실린더 구조의 저장전극을 형성하는 방법에 관한 기술이다.The present invention relates to a method of forming a storage electrode of a semiconductor device, in order to prevent the loss of the lower oxide layer and simplify the manufacturing process, the etching of doped polysilicon and undoped polysilicon without using other oxide layer other than the lower oxide layer By etching back the doped polysilicon and undoped polysilicon film using the speed difference. The present invention relates to a method for forming a cylindrical storage electrode formed of a doped polysilicon film having a cross-sectional structure and an undoped polysilicon film having a cylindrical structure.

Description

실리더 구조의 저장전극 형성방법Method of forming storage electrode of cylinder structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2도는 본 발명의 실린더 구조의 저장전극 형성방법을 도시한 단면도.2A to 2 are cross-sectional views showing a storage electrode forming method of the cylinder structure of the present invention.

Claims (2)

반도체 소자의 저장전극 형성방법에 있어서. 하부 상화막을 형성하고 스토리지 노드 콘택을 형성한 다음에 그 상부에 제1다결정 실리콘막을 두껍게 증착하고 불순물을 도핑을 하여 제1다결정 실리콘막의 불순물 농도를 완전히 포화시키과 과 상부의 저장전극이 형성될 부분에 감광막 패턴을 형성하는 단계와, 상기 감광막 패턴을 마스크로 하여 제1다결정 실리콘막을 건식 식각하고 전체 상부 표면을 따라 제2다결정 실리콘막을 증착하는 단계와. 비등방성 건식 실각 공정으로 제1 및 제2 다결정 실리콘막을 에치백 (etch back)하여 제1다결정 실리콘막의 측벽을 따라 제2다결정 실리콘막의 스페이서를 형성하는 단계와. 상기 패치씩 공정을 계속 실시하여 제1다결정 실리콘막을 부분 식각함으로써 일정 두께의 제1다결정 실리콘막과 그 주위로 원통형 구조의 제2다결정 실리콘막으로 천성된 실린디 구조의 저장전극을 형성하는 단계로 이루어지는 것을 특징으로 하는 실린더 구조의 저장전극 형성방법.A method of forming a storage electrode of a semiconductor device. After forming the lower phase film and forming the storage node contact, the first polycrystalline silicon film is thickly deposited thereon and doped with impurities to completely saturate the impurity concentration of the first polycrystalline silicon film and to form the upper storage electrode. Forming a photoresist pattern, dry etching the first polycrystalline silicon film using the photoresist pattern as a mask, and depositing a second polycrystalline silicon film along an entire upper surface thereof; Etching back the first and second polycrystalline silicon films by an anisotropic dry real process to form spacers of the second polycrystalline silicon film along sidewalls of the first polycrystalline silicon film; Continuing the patch-by-patch process to partially etch the first polycrystalline silicon film to form a storage electrode having a cylinder structure formed of a first polycrystalline silicon film having a predetermined thickness and a second polycrystalline silicon film having a cylindrical structure around the first polycrystalline silicon film. The storage electrode forming method of the cylinder structure, characterized in that made. 제1항에 있어서, 제1다결정 실리콘막의 식각 속도를 높일 수 있도록 불순물 POC13를 포화 도핑시키는 것을 특징으로 하는 실린더 구조의 저장전극 형성방법.The method of claim 1, wherein the impurity POC1 3 is saturated to increase the etching rate of the first polycrystalline silicon film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930023073A 1993-11-02 1993-11-02 Storage electrode formation method of cylinder structure KR950015583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930023073A KR950015583A (en) 1993-11-02 1993-11-02 Storage electrode formation method of cylinder structure

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Application Number Priority Date Filing Date Title
KR1019930023073A KR950015583A (en) 1993-11-02 1993-11-02 Storage electrode formation method of cylinder structure

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KR950015583A true KR950015583A (en) 1995-06-17

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KR1019930023073A KR950015583A (en) 1993-11-02 1993-11-02 Storage electrode formation method of cylinder structure

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100236069B1 (en) * 1996-12-26 1999-12-15 김영환 Capacitor and manufacturing method thereof
KR100358138B1 (en) * 1995-12-23 2003-03-06 주식회사 하이닉스반도체 A method for forming cylindrical storage node in semiconductor device
KR100431711B1 (en) * 1996-12-30 2004-12-04 주식회사 하이닉스반도체 Method for forming charge storage node of semiconductor device to improve characteristic of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358138B1 (en) * 1995-12-23 2003-03-06 주식회사 하이닉스반도체 A method for forming cylindrical storage node in semiconductor device
KR100236069B1 (en) * 1996-12-26 1999-12-15 김영환 Capacitor and manufacturing method thereof
KR100431711B1 (en) * 1996-12-30 2004-12-04 주식회사 하이닉스반도체 Method for forming charge storage node of semiconductor device to improve characteristic of semiconductor device

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