KR950015583A - Storage electrode formation method of cylinder structure - Google Patents
Storage electrode formation method of cylinder structure Download PDFInfo
- Publication number
- KR950015583A KR950015583A KR1019930023073A KR930023073A KR950015583A KR 950015583 A KR950015583 A KR 950015583A KR 1019930023073 A KR1019930023073 A KR 1019930023073A KR 930023073 A KR930023073 A KR 930023073A KR 950015583 A KR950015583 A KR 950015583A
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- KR
- South Korea
- Prior art keywords
- polycrystalline silicon
- silicon film
- storage electrode
- forming
- cylinder structure
- Prior art date
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- Semiconductor Memories (AREA)
Abstract
본 발명은 반도체 소자의 저장전극 형성방법에 관한 것으로, 하부 산화막의 손실을 방지하고 제조공정의 단순화를 위하여, 하부 산화막 외의 다른 산화막을 사용하지 않고, 도핑된 폴리실리콘과 도핑되지 않은 폴리실리콘의 식각 속도차를 이용하여 도핑된 폴리 실리콘과 도핑되지 않은 폴리 실리콘막을 에치백함으로써. 편관 구조의 도핑된 폴리실리콘막과 원통형 구조의 도핑되지 않은 폴리실리콘막으로 형성된 실린더 구조의 저장전극을 형성하는 방법에 관한 기술이다.The present invention relates to a method of forming a storage electrode of a semiconductor device, in order to prevent the loss of the lower oxide layer and simplify the manufacturing process, the etching of doped polysilicon and undoped polysilicon without using other oxide layer other than the lower oxide layer By etching back the doped polysilicon and undoped polysilicon film using the speed difference. The present invention relates to a method for forming a cylindrical storage electrode formed of a doped polysilicon film having a cross-sectional structure and an undoped polysilicon film having a cylindrical structure.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2도는 본 발명의 실린더 구조의 저장전극 형성방법을 도시한 단면도.2A to 2 are cross-sectional views showing a storage electrode forming method of the cylinder structure of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930023073A KR950015583A (en) | 1993-11-02 | 1993-11-02 | Storage electrode formation method of cylinder structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930023073A KR950015583A (en) | 1993-11-02 | 1993-11-02 | Storage electrode formation method of cylinder structure |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950015583A true KR950015583A (en) | 1995-06-17 |
Family
ID=66824845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930023073A KR950015583A (en) | 1993-11-02 | 1993-11-02 | Storage electrode formation method of cylinder structure |
Country Status (1)
Country | Link |
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KR (1) | KR950015583A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100236069B1 (en) * | 1996-12-26 | 1999-12-15 | 김영환 | Capacitor and manufacturing method thereof |
KR100358138B1 (en) * | 1995-12-23 | 2003-03-06 | 주식회사 하이닉스반도체 | A method for forming cylindrical storage node in semiconductor device |
KR100431711B1 (en) * | 1996-12-30 | 2004-12-04 | 주식회사 하이닉스반도체 | Method for forming charge storage node of semiconductor device to improve characteristic of semiconductor device |
-
1993
- 1993-11-02 KR KR1019930023073A patent/KR950015583A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100358138B1 (en) * | 1995-12-23 | 2003-03-06 | 주식회사 하이닉스반도체 | A method for forming cylindrical storage node in semiconductor device |
KR100236069B1 (en) * | 1996-12-26 | 1999-12-15 | 김영환 | Capacitor and manufacturing method thereof |
KR100431711B1 (en) * | 1996-12-30 | 2004-12-04 | 주식회사 하이닉스반도체 | Method for forming charge storage node of semiconductor device to improve characteristic of semiconductor device |
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