KR950011727B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR950011727B1
KR950011727B1 KR1019910012008A KR910012008A KR950011727B1 KR 950011727 B1 KR950011727 B1 KR 950011727B1 KR 1019910012008 A KR1019910012008 A KR 1019910012008A KR 910012008 A KR910012008 A KR 910012008A KR 950011727 B1 KR950011727 B1 KR 950011727B1
Authority
KR
South Korea
Prior art keywords
high voltage
transistor
memory device
semiconductor memory
memory cell
Prior art date
Application number
KR1019910012008A
Other languages
English (en)
Korean (ko)
Other versions
KR920003319A (ko
Inventor
다이라 이와세
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR920003319A publication Critical patent/KR920003319A/ko
Application granted granted Critical
Publication of KR950011727B1 publication Critical patent/KR950011727B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories

Landscapes

  • Read Only Memory (AREA)
KR1019910012008A 1990-07-17 1991-07-15 반도체 기억장치 KR950011727B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP18844790A JP3020561B2 (ja) 1990-07-17 1990-07-17 半導体記憶装置
JP02-188447 1990-07-17
JP2-188447 1990-07-17

Publications (2)

Publication Number Publication Date
KR920003319A KR920003319A (ko) 1992-02-29
KR950011727B1 true KR950011727B1 (ko) 1995-10-09

Family

ID=16223852

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910012008A KR950011727B1 (ko) 1990-07-17 1991-07-15 반도체 기억장치

Country Status (2)

Country Link
JP (1) JP3020561B2 (ja)
KR (1) KR950011727B1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006172660A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 不揮発性半導体記憶装置
JP2008228109A (ja) * 2007-03-14 2008-09-25 Meidensha Corp 遠方監視情報の通報システムおよび通信方法
US8395923B2 (en) * 2008-12-30 2013-03-12 Intel Corporation Antifuse programmable memory array
WO2013179593A1 (ja) * 2012-05-29 2013-12-05 パナソニック株式会社 半導体記憶装置および半導体記憶装置を搭載した半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4609998A (en) * 1983-12-15 1986-09-02 Monolithic Memories, Inc. High conductance circuit for programmable integrated circuit
JPS6266497A (ja) * 1985-09-19 1987-03-25 Fujitsu Ltd プログラマブルリ−ドオンリメモリ
US4783763A (en) * 1985-12-23 1988-11-08 North American Philips Corp., Signetics Division Field-programmable device with buffer between programmable circuit

Also Published As

Publication number Publication date
JPH0474396A (ja) 1992-03-09
KR920003319A (ko) 1992-02-29
JP3020561B2 (ja) 2000-03-15

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