KR950009953A - 드라이 에칭방법 - Google Patents

드라이 에칭방법 Download PDF

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Publication number
KR950009953A
KR950009953A KR1019940023354A KR19940023354A KR950009953A KR 950009953 A KR950009953 A KR 950009953A KR 1019940023354 A KR1019940023354 A KR 1019940023354A KR 19940023354 A KR19940023354 A KR 19940023354A KR 950009953 A KR950009953 A KR 950009953A
Authority
KR
South Korea
Prior art keywords
wafer
dry etching
etching method
aluminum
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019940023354A
Other languages
English (en)
Korean (ko)
Inventor
마사또시 오야마
요시아끼 사또
다다미쯔 가네끼요
히데노리 다께스에
Original Assignee
가나이 쯔도무
가부시끼가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이 쯔도무, 가부시끼가이샤 히다찌 세이사꾸쇼 filed Critical 가나이 쯔도무
Publication of KR950009953A publication Critical patent/KR950009953A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
KR1019940023354A 1993-09-17 1994-09-15 드라이 에칭방법 Withdrawn KR950009953A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23126893A JP3161888B2 (ja) 1993-09-17 1993-09-17 ドライエッチング方法
JP93-231268 1993-09-17

Publications (1)

Publication Number Publication Date
KR950009953A true KR950009953A (ko) 1995-04-26

Family

ID=16920950

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940023354A Withdrawn KR950009953A (ko) 1993-09-17 1994-09-15 드라이 에칭방법

Country Status (3)

Country Link
JP (1) JP3161888B2 (https=)
KR (1) KR950009953A (https=)
TW (1) TW256935B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010028673A (ko) * 1999-09-22 2001-04-06 윤종용 반응성 이온 식각을 이용한 반도체 소자의 컨택 홀 형성 방법
KR20010062744A (ko) * 1999-12-28 2001-07-07 니시무로 타이죠 고선택비의 에칭이 가능한 드라이 에칭 방법 및 반도체장치의 제조 방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177353B1 (en) * 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010028673A (ko) * 1999-09-22 2001-04-06 윤종용 반응성 이온 식각을 이용한 반도체 소자의 컨택 홀 형성 방법
KR20010062744A (ko) * 1999-12-28 2001-07-07 니시무로 타이죠 고선택비의 에칭이 가능한 드라이 에칭 방법 및 반도체장치의 제조 방법

Also Published As

Publication number Publication date
TW256935B (https=) 1995-09-11
JP3161888B2 (ja) 2001-04-25
JPH0786249A (ja) 1995-03-31

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000