TW256935B - - Google Patents

Info

Publication number
TW256935B
TW256935B TW083108442A TW83108442A TW256935B TW 256935 B TW256935 B TW 256935B TW 083108442 A TW083108442 A TW 083108442A TW 83108442 A TW83108442 A TW 83108442A TW 256935 B TW256935 B TW 256935B
Authority
TW
Taiwan
Application number
TW083108442A
Original Assignee
Hitachi Seisakusyo Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Seisakusyo Kk filed Critical Hitachi Seisakusyo Kk
Application granted granted Critical
Publication of TW256935B publication Critical patent/TW256935B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
TW083108442A 1993-09-17 1994-09-13 TW256935B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23126893A JP3161888B2 (ja) 1993-09-17 1993-09-17 ドライエッチング方法

Publications (1)

Publication Number Publication Date
TW256935B true TW256935B (zh) 1995-09-11

Family

ID=16920950

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083108442A TW256935B (zh) 1993-09-17 1994-09-13

Country Status (3)

Country Link
JP (1) JP3161888B2 (zh)
KR (1) KR950009953A (zh)
TW (1) TW256935B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177353B1 (en) * 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
KR20010028673A (ko) * 1999-09-22 2001-04-06 윤종용 반응성 이온 식각을 이용한 반도체 소자의 컨택 홀 형성 방법
TW486733B (en) * 1999-12-28 2002-05-11 Toshiba Corp Dry etching method and manufacturing method of semiconductor device for realizing high selective etching

Also Published As

Publication number Publication date
KR950009953A (ko) 1995-04-26
JPH0786249A (ja) 1995-03-31
JP3161888B2 (ja) 2001-04-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees