KR950009624B1 - 방열부를 갖는 반도체장치 및 그 제조방법 - Google Patents
방열부를 갖는 반도체장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR950009624B1 KR950009624B1 KR1019920004516A KR920004516A KR950009624B1 KR 950009624 B1 KR950009624 B1 KR 950009624B1 KR 1019920004516 A KR1019920004516 A KR 1019920004516A KR 920004516 A KR920004516 A KR 920004516A KR 950009624 B1 KR950009624 B1 KR 950009624B1
- Authority
- KR
- South Korea
- Prior art keywords
- resin
- semiconductor device
- stage
- heat dissipation
- package portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49121—Beam lead frame or beam lead device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP91-057314 | 1991-03-20 | ||
| JP3057314A JPH04291948A (ja) | 1991-03-20 | 1991-03-20 | 半導体装置及びその製造方法及び放熱フィン |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920018912A KR920018912A (ko) | 1992-10-22 |
| KR950009624B1 true KR950009624B1 (ko) | 1995-08-25 |
Family
ID=13052109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920004516A Expired - Fee Related KR950009624B1 (ko) | 1991-03-20 | 1992-03-19 | 방열부를 갖는 반도체장치 및 그 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5296740A (enExample) |
| EP (1) | EP0506509B1 (enExample) |
| JP (1) | JPH04291948A (enExample) |
| KR (1) | KR950009624B1 (enExample) |
| DE (1) | DE69222340T2 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04291948A (ja) * | 1991-03-20 | 1992-10-16 | Fujitsu Ltd | 半導体装置及びその製造方法及び放熱フィン |
| JPH0677354A (ja) * | 1992-08-24 | 1994-03-18 | Hitachi Ltd | 半導体装置 |
| US5880403A (en) | 1994-04-01 | 1999-03-09 | Space Electronics, Inc. | Radiation shielding of three dimensional multi-chip modules |
| US6613978B2 (en) * | 1993-06-18 | 2003-09-02 | Maxwell Technologies, Inc. | Radiation shielding of three dimensional multi-chip modules |
| JPH0722722A (ja) * | 1993-07-05 | 1995-01-24 | Mitsubishi Electric Corp | 樹脂成形タイプの電子回路装置 |
| KR960700875A (ko) * | 1994-01-13 | 1996-02-24 | 나카지마 미치오 | 반도체 장치의 수지봉지 방법 |
| US6261508B1 (en) * | 1994-04-01 | 2001-07-17 | Maxwell Electronic Components Group, Inc. | Method for making a shielding composition |
| US6455864B1 (en) | 1994-04-01 | 2002-09-24 | Maxwell Electronic Components Group, Inc. | Methods and compositions for ionizing radiation shielding |
| US6720493B1 (en) | 1994-04-01 | 2004-04-13 | Space Electronics, Inc. | Radiation shielding of integrated circuits and multi-chip modules in ceramic and metal packages |
| DE4419060A1 (de) * | 1994-05-31 | 1995-12-07 | Siemens Ag | Einrichtung zum Kühlen eines IC |
| JP3487524B2 (ja) * | 1994-12-20 | 2004-01-19 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| US6208513B1 (en) | 1995-01-17 | 2001-03-27 | Compaq Computer Corporation | Independently mounted cooling fins for a low-stress semiconductor package |
| US6339875B1 (en) | 1996-04-08 | 2002-01-22 | Heat Technology, Inc. | Method for removing heat from an integrated circuit |
| TW392315B (en) * | 1996-12-03 | 2000-06-01 | Nippon Electric Co | Boards mounting with chips, mounting structure of chips, and manufacturing method for boards mounting with chips |
| JP2907186B2 (ja) * | 1997-05-19 | 1999-06-21 | 日本電気株式会社 | 半導体装置、その製造方法 |
| KR100343221B1 (ko) * | 1999-11-09 | 2002-07-10 | 윤종용 | 미세구조의 냉각핀을 가지는 냉각장치 |
| US6377219B2 (en) | 2000-01-11 | 2002-04-23 | Cool Options, Inc. | Composite molded antenna assembly |
| US6680015B2 (en) * | 2000-02-01 | 2004-01-20 | Cool Options, Inc. | Method of manufacturing a heat sink assembly with overmolded carbon matrix |
| US6368899B1 (en) * | 2000-03-08 | 2002-04-09 | Maxwell Electronic Components Group, Inc. | Electronic device packaging |
| US6851869B2 (en) * | 2000-08-04 | 2005-02-08 | Cool Options, Inc. | Highly thermally conductive electronic connector |
| US7273769B1 (en) * | 2000-08-16 | 2007-09-25 | Micron Technology, Inc. | Method and apparatus for removing encapsulating material from a packaged microelectronic device |
| US6585925B2 (en) | 2000-12-27 | 2003-07-01 | Intel Corporation | Process for forming molded heat dissipation devices |
| US7027304B2 (en) * | 2001-02-15 | 2006-04-11 | Integral Technologies, Inc. | Low cost thermal management device or heat sink manufactured from conductive loaded resin-based materials |
| US6756005B2 (en) * | 2001-08-24 | 2004-06-29 | Cool Shield, Inc. | Method for making a thermally conductive article having an integrated surface and articles produced therefrom |
| US7382043B2 (en) * | 2002-09-25 | 2008-06-03 | Maxwell Technologies, Inc. | Method and apparatus for shielding an integrated circuit from radiation |
| CA2464153A1 (en) * | 2003-04-14 | 2004-10-14 | Integral Technologies, Inc. | Low cost lighting circuits manufactured from conductive loaded resin-based materials |
| US20040218363A1 (en) * | 2003-04-30 | 2004-11-04 | Wong Marvin Glenn | Application specific heat-dissipating apparatus that provides electrical isolation for components |
| US7191516B2 (en) * | 2003-07-16 | 2007-03-20 | Maxwell Technologies, Inc. | Method for shielding integrated circuit devices |
| EP1668698A1 (de) * | 2003-09-29 | 2006-06-14 | Siemens Aktiengesellschaft | Plastisch verformbarer kühlkörper für elektrische und/oder elektronische bauelemente |
| DE10352705A1 (de) * | 2003-11-12 | 2005-06-23 | Diehl Bgt Defence Gmbh & Co. Kg | Schaltungsanordnung |
| CN100405587C (zh) * | 2003-11-22 | 2008-07-23 | 鸿富锦精密工业(深圳)有限公司 | 散热器及其制备方法 |
| JP5165207B2 (ja) | 2006-03-29 | 2013-03-21 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置の製造方法 |
| US20080047141A1 (en) * | 2006-08-08 | 2008-02-28 | Inventec Corporation | Method for fabricating supporting column of heat sink |
| US7468886B2 (en) * | 2007-03-05 | 2008-12-23 | International Business Machines Corporation | Method and structure to improve thermal dissipation from semiconductor devices |
| JP5096782B2 (ja) * | 2007-04-19 | 2012-12-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2009188720A (ja) * | 2008-02-06 | 2009-08-20 | Panasonic Corp | 固体撮像装置およびその製造方法 |
| DE102009045063C5 (de) | 2009-09-28 | 2017-06-01 | Infineon Technologies Ag | Leistungshalbleitermodul mit angespritztem Kühlkörper, Leistungshalbleitermodulsystem und Verfahren zur Herstellung eines Leistungshalbleitermoduls |
| JP5523299B2 (ja) * | 2010-12-20 | 2014-06-18 | 株式会社日立製作所 | パワーモジュール |
| KR20130026062A (ko) * | 2011-09-05 | 2013-03-13 | 삼성전자주식회사 | 인쇄회로기판 조립체 및 그 제조방법 |
| US9263412B2 (en) | 2012-03-09 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging methods and packaged semiconductor devices |
| US20130234317A1 (en) * | 2012-03-09 | 2013-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging Methods and Packaged Semiconductor Devices |
| DE102012222679A1 (de) * | 2012-12-10 | 2014-06-12 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Schaltmoduls und eines zugehörigen Gittermoduls sowie ein zugehöriges Gittermodul und korrespondierende elektronische Baugruppe |
| US11604035B2 (en) * | 2013-09-29 | 2023-03-14 | Huawei Technologies Co., Ltd. | Support plateheat dissipation apparatus |
| DE102015120100B4 (de) * | 2015-11-19 | 2023-12-07 | Danfoss Silicon Power Gmbh | Elektronisches Modul, Verfahren zur Herstellung eines elektronischen Moduls und Zusammenstellung von übereinandergestapelten elektronischen Modulen |
| JP7039908B2 (ja) * | 2017-09-26 | 2022-03-23 | 株式会社デンソー | 半導体装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5588358A (en) * | 1978-12-27 | 1980-07-04 | Hitachi Ltd | Resin-sealed semiconductor device |
| JPS58100447A (ja) * | 1981-12-11 | 1983-06-15 | Hitachi Ltd | 樹脂封止型半導体装置およびその製造方法 |
| US4835598A (en) * | 1985-06-13 | 1989-05-30 | Matsushita Electric Works, Ltd. | Wiring board |
| US5108955A (en) * | 1988-10-27 | 1992-04-28 | Citizen Watch Co., Ltd. | Method of making a resin encapsulated pin grid array with integral heatsink |
| US5179039A (en) * | 1988-02-05 | 1993-01-12 | Citizen Watch Co., Ltd. | Method of making a resin encapsulated pin grid array with integral heatsink |
| US4884631A (en) * | 1988-03-17 | 1989-12-05 | California Institute Of Technology | Forced air heat sink apparatus |
| US5151777A (en) * | 1989-03-03 | 1992-09-29 | Delco Electronics Corporation | Interface device for thermally coupling an integrated circuit to a heat sink |
| US5057903A (en) * | 1989-07-17 | 1991-10-15 | Microelectronics And Computer Technology Corporation | Thermal heat sink encapsulated integrated circuit |
| US5147821A (en) * | 1990-09-28 | 1992-09-15 | Motorola, Inc. | Method for making a thermally enhanced semiconductor device by holding a leadframe against a heatsink through vacuum suction in a molding operation |
| IT1247649B (it) * | 1990-10-31 | 1994-12-28 | Sgs Thomson Microelectronics | Procedimento di incapsulamento in resina di un dispositivo a semiconduttore di potenza montato su dissipatore allontanando i reofori dal dissipatore mediante l'azione del controstampo in fase di chiusura dello stampo |
| US5254500A (en) * | 1991-02-05 | 1993-10-19 | Advanced Micro Devices, Inc. | Method for making an integrally molded semiconductor device heat sink |
| JPH04291948A (ja) * | 1991-03-20 | 1992-10-16 | Fujitsu Ltd | 半導体装置及びその製造方法及び放熱フィン |
| US5249101A (en) * | 1992-07-06 | 1993-09-28 | International Business Machines Corporation | Chip carrier with protective coating for circuitized surface |
| US5344795A (en) * | 1992-09-22 | 1994-09-06 | Microelectronics And Computer Technology Corporation | Method for encapsulating an integrated circuit using a removable heatsink support block |
-
1991
- 1991-03-20 JP JP3057314A patent/JPH04291948A/ja not_active Withdrawn
-
1992
- 1992-03-13 US US07/851,208 patent/US5296740A/en not_active Expired - Lifetime
- 1992-03-16 EP EP92400686A patent/EP0506509B1/en not_active Expired - Lifetime
- 1992-03-16 DE DE69222340T patent/DE69222340T2/de not_active Expired - Fee Related
- 1992-03-19 KR KR1019920004516A patent/KR950009624B1/ko not_active Expired - Fee Related
-
1993
- 1993-09-14 US US08/120,437 patent/US5424251A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5424251A (en) | 1995-06-13 |
| EP0506509A2 (en) | 1992-09-30 |
| KR920018912A (ko) | 1992-10-22 |
| EP0506509B1 (en) | 1997-09-24 |
| US5296740A (en) | 1994-03-22 |
| DE69222340T2 (de) | 1998-01-29 |
| JPH04291948A (ja) | 1992-10-16 |
| EP0506509A3 (enExample) | 1995-02-01 |
| DE69222340D1 (de) | 1997-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR950009624B1 (ko) | 방열부를 갖는 반도체장치 및 그 제조방법 | |
| US6432750B2 (en) | Power module package having insulator type heat sink attached to rear surface of lead frame and manufacturing method thereof | |
| KR100806479B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| US7582958B2 (en) | Semiconductor package | |
| US9159588B2 (en) | Packaged leadless semiconductor device | |
| US6723582B2 (en) | Method of making a semiconductor package having exposed metal strap | |
| US7208819B2 (en) | Power module package having improved heat dissipating capability | |
| US20020109219A1 (en) | Semiconductor package with heat sink having air vent | |
| JPH0621276A (ja) | 熱強化型半導体素子およびその製造方法 | |
| KR19980032479A (ko) | 표면 설치 to-220 패키지 및 그의 제조 공정 | |
| US6713864B1 (en) | Semiconductor package for enhancing heat dissipation | |
| US7221042B2 (en) | Leadframe designs for integrated circuit plastic packages | |
| US20080173989A1 (en) | Leadframe designs for plastic overmold packages | |
| US20010040300A1 (en) | Semiconductor package with heat dissipation opening | |
| US6696750B1 (en) | Semiconductor package with heat dissipating structure | |
| US20060145312A1 (en) | Dual flat non-leaded semiconductor package | |
| JPH0846100A (ja) | 半導体集積回路装置 | |
| KR930007171Y1 (ko) | 열발산 바를 설치한 반도체 패키지 | |
| US7951651B2 (en) | Dual flat non-leaded semiconductor package | |
| US20250105108A1 (en) | Semiconductor device comprising a semiconductor die sandwiched between two leadframes and a method for fabricating the same | |
| KR19990086280A (ko) | 반도체 패키지 | |
| JP2713141B2 (ja) | 半導体装置 | |
| JPH03265161A (ja) | 樹脂封止型半導体装置 | |
| KR101016715B1 (ko) | 반도체장치 | |
| JPH0314229B2 (enExample) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 13 |
|
| FPAY | Annual fee payment |
Payment date: 20080808 Year of fee payment: 14 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 14 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R14-asn-PN2301 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20090826 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20090826 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |