KR920018912A - 방열부를 갖는 반도체장치 및 그 제조방법 - Google Patents

방열부를 갖는 반도체장치 및 그 제조방법 Download PDF

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KR920018912A
KR920018912A KR1019920004516A KR920004516A KR920018912A KR 920018912 A KR920018912 A KR 920018912A KR 1019920004516 A KR1019920004516 A KR 1019920004516A KR 920004516 A KR920004516 A KR 920004516A KR 920018912 A KR920018912 A KR 920018912A
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미찌오 소노
준이찌 가사이
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세끼자와 다다시
후지쓰 가부시끼가이샤
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Abstract

내용 없음

Description

방열부를 갖는 반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의한 반도체장치의 제1실시예를 나타낸 사시도.
제4도는 제3도에 나타낸 제1실시예의 종단면을 나타낸 종단면도.
제5도는 제3도에 나타낸 제1실시예의 수평 단면을 나타낸 횡단면도.

Claims (16)

  1. 상면과 저면을 갖는 스테이지(4a), 상기 스테이지의 상면에 장착된 반도체소자(13), 제1수지로 제조되고 상기 반도체소자를 봉입하는 패키지부(11) 및 상기 패키지부위에 설비된 방열부(12,21)을 포함하는 반도체장치에 있어서, 패키지부(11)의 면(11a)과 스테이지(14a)의 이면(14a-1)이 실질적으로 동일평면에 놓이고 상기 방열부(12,21)가 제2수지로 제조되고 스테이지(14a)의 이면(14a-1)과 상기 패키지부(11)의 면(11a)위에 직접 설비되고, 상기 제2수지가 금속분말과 절연물분말로 된 군에서 선택되고 열전도가 상기 제1수지의 열전도보다도 큰 충전제를 포함하는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 제2수지가 금(Au), 은(Ag), 알루미늄(Al), 동(Cu) 및 니켈(Ni) 분말들과 질화알루미늄(AlN), 알루미나(Al2O3) 및 질화보론(BN) 분말들로된 군에서 선택된 충전재를 포함하는 것을 특징으로 하는 반도체장치.
  3. 제1항 또는 제2항에 있어서, 상기 제2수지가 적어도 1010옴(Ω)의 저항을 갖는 것을 특징으로 하는 반도체장치.
  4. 제1~3항중의 어느 한항에 있어서, 상기 제1수지 및 제2수지가 대략 같은 열팽창계수를 갖는 것을 특징으로 하는 반도체장치.
  5. 제1~4항중의 어느 한항에 있어서, 상기 방열부(12,21)가 핀구조를 갖는 것을 특징으로 하는 반도체장치.
  6. 제1~5항중의 어느 한항에 있어서, 상기 스테이지(14a)가 凹부를 갖고 상기 반도체소자(13)가 이 凹부에 장착되어 패키지부(11)의 면(11a)과 상기 스테이지(14a)의 이면(14a-1)이 실질적으로 동일평면에 놓이는 것을 특징으로 하는 반도체장치.
  7. 제1~6항중의 어느 한항에 있어서, 상기 패키지부(11)로부터 외부로 튀어나오고 상기 패키지부내에서 상기 반도체소자(13)에 전기적으로 연결되는 복수의 리드가 더 설비되어 있는 것을 특징으로 하는 반도체 소자.
  8. 스테이지(14a), 상기 스테이지위에 장착되고 패키지부(11)내에 봉입되는 반도체소자(13) 및 상기 패키지부 위에 설비되는 방열부(12,21)를 포함하는 반도체장치의 제조방법에 있어서, 패키지부(11)의 면(11a)과 상기 반도체 소자가 장착되는 제2면의 이면인 스테이지(14a)의 제1면(14a-1)이 실질적으로 동일평면에 놓이도록 제1수지로 패키지부(11)를 형성하는 스텝(a)과, 금속분말과 절연물분말로 된 군에서 선택되고 열전도가 상기 제1수지의 열전도보다 큰 충전제를 포함하는 제2수지로 방열부(12,21)가 상기 스테이지(14)의 제1면(14a-1)과 상기 패키지부(11)의 면(11a)위에 직접 설비되게 상기 방열부(12,21)를 형성하는 스텝(b)으로 된 것을 특징으로 하는 반도체장치의 제조방법.
  9. 제8항에 있어서, 상기 제2수지가 금(Au), 은(Ag), 동(Cu) 및 니켈(Ni) 분말과 질화알루미늄(AlN), 알루미나(Al2O3) 및 질화보론(BN) 분말들로된 군에서 선택된 충전재를 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
  10. 제8항 또는 제9항에 있어서, 상기 제2수지가 적어도 1010옴(Ω)의 저항을 갖는 것을 특징으로 하는 반도체장치의 제조방법.
  11. 제8~10항중의 어느 한항에 있어서, 상기 제1 및 제2수지가 대략 같은 열팽창계수를 갖는 것을 특징으로 하는 반도체장치의 제조방법.
  12. 제8~11항중의 어느 한항에 있어서, 상기 스텝(b)이 핀구조를 갖는 방열부(12,21)를 형성하는 것을 특징으로 하는 반도체장치의 제조방법.
  13. 제8~12항중의 어느 한항에 있어서, 상기 스텝(a)이 상기 반도체 소자(13)가 장착되는 凹부를 갖는 스테이지(14a)를 사용하는 것을 특징으로 하는 반도체장치의 제조방법.
  14. 제13항에 있어서, 상기 스텝(b)이 다이(16)안으로 상기 제2수지를 주입하여 방열부(12,21)를 형성하고 상기 스테이지(14a)의 제1면(14a-1)이 상기 凹부에서의 스테이지의 탄성에 의해서 다이(16)에 대해서 밀어 올려지는 것을 특징으로 하는 반도체장치의 제조방법.
  15. 제8~13항중의 어느 한항에 있어서, 상기 스텝(b)이 다이(16)안으로 상기 제2수지를 주입하여 방열부(12,21)를 형성하고 상기 스텝(b)이 진공에 의해서 다이(16)에 대해서 상기 스테이지의 제1면(14a-1)을 당겨 올리는 것을 특징으로 하는 반도체장치의 제조방법.
  16. 제8~15항중 어느 한항에 있어서, 상기 스텝(a)이 상기 패키지부(11) 외부로 튀어나오고 패키지부 내부에서 반도체소자(13)에 전기적으로 연결되는 복수의 리드(14b,14c)를 형성하는 것을 포함하는 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920004516A 1991-03-20 1992-03-19 방열부를 갖는 반도체장치 및 그 제조방법 KR950009624B1 (ko)

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JP3057314A JPH04291948A (ja) 1991-03-20 1991-03-20 半導体装置及びその製造方法及び放熱フィン
JP91-057314 1991-03-20

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KR920018912A true KR920018912A (ko) 1992-10-22
KR950009624B1 KR950009624B1 (ko) 1995-08-25

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US5424251A (en) 1995-06-13
EP0506509A3 (ko) 1995-02-01
KR950009624B1 (ko) 1995-08-25
US5296740A (en) 1994-03-22
DE69222340T2 (de) 1998-01-29
DE69222340D1 (de) 1997-10-30
EP0506509A2 (en) 1992-09-30
EP0506509B1 (en) 1997-09-24
JPH04291948A (ja) 1992-10-16

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