KR950004445A - 박막형성장치 - Google Patents
박막형성장치 Download PDFInfo
- Publication number
- KR950004445A KR950004445A KR1019940015958A KR19940015958A KR950004445A KR 950004445 A KR950004445 A KR 950004445A KR 1019940015958 A KR1019940015958 A KR 1019940015958A KR 19940015958 A KR19940015958 A KR 19940015958A KR 950004445 A KR950004445 A KR 950004445A
- Authority
- KR
- South Korea
- Prior art keywords
- collimator
- thin film
- film forming
- plate
- forming apparatus
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 238000004049 embossing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은, 콜리메이터를 사용하는 박막형성장치에 있어서, 지향성박막형성을 위한 콜리메이터의 기능을 손상하는 일없이, 파티클의 증가를 저감시키는 것을 목적으로 한 것이며, 그 구성에 있어서 파티클게터기능을 가진 콜리메이터와 그것을 타겟과 웨이퍼의 사이에 개재시킨 박막형성장치로써, 콜리메이터(3)는, 파티콜게터판(PG판)(15)을 격자, 벌집형상구조등 개구군을 가진 구조로 짜맞추고, 프레임(16)에 고정해서 형성한다. PG판은, 파티클포획 및 유지작용에 뛰어난 표면을 일체적으로 형성한 시트, 판등을 포괄한다. 콜리메이터의 예는, 엠보스가공한 슬릿형성 파티클게터판의 격자형상조립체이다. 콜리메이터에 부착한 부착막의 박리를 콜리메이터의 성능을 저하시키는 일없이 방지할 수 있는 것을 특징으로 한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 일예로써 타켓스퍼터링에 의한 박막형성장치의 요부를 표시한 단면도, 제3도는 격자 형상의 파티클게터(particle getter)작용을 가진 콜리메이터를 표시하며, (a)도는 상면도, (b)도는 (a)도의 콜리메이터의 일부사시도, 제4도는 제3도의 파티클게터콜리메이터의 조립단계를 표시하며, (a)도는 구멍 가공한 PG판과 가장자리변에 슬릿을 형성한 PG판을 표시하고, (b)도는 이들 2종의 가공된 PG판을 둘로 꺽어구부린 상태를 각각 표시하고, (c)는 이들을 각각 엠보스가공기에 전후의 PG판을 표시한 도면.
Claims (4)
- 파티클게터판으로 구성된 콜리메이터를 성막원과 기판과의 사이에 구비하는 것을 특징으로 하는 박막 형성장치.
- 제1항에 있어서, 콜리메이터가 엠보스가공한 슬릿형성파티클게터판을 경자형상으로 조립하므로서 구성되는 것을 특징으로 하는 박막형성장치.
- 파티클게터판으로 구성된 것을 특징으로 하는 박막형성장치용 콜리메이터.
- 제3항에 있어서, 엠보스가공한 슬릿형성파티클게터판을 격자형상으로 조립하므로서 구성되는 것을 특징으로 하는 박막형성장치용 콜리메이터.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP93-191612 | 1993-07-06 | ||
JP5191612A JPH0718423A (ja) | 1993-07-06 | 1993-07-06 | 薄膜形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950004445A true KR950004445A (ko) | 1995-02-18 |
KR0153213B1 KR0153213B1 (ko) | 1998-12-01 |
Family
ID=16277536
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940015958A KR0153213B1 (ko) | 1993-07-06 | 1994-07-05 | 박막형성장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5804046A (ko) |
EP (2) | EP0633599B1 (ko) |
JP (1) | JPH0718423A (ko) |
KR (1) | KR0153213B1 (ko) |
DE (1) | DE69420902T2 (ko) |
TW (1) | TW294726B (ko) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5614071A (en) * | 1995-06-28 | 1997-03-25 | Hmt Technology Corporation | Sputtering shield |
KR20000069523A (ko) * | 1997-01-16 | 2000-11-25 | 보텀필드 레인, 에프. | 기상 증착 요소 및 기상 증착 방법 |
JPH1180964A (ja) * | 1997-07-07 | 1999-03-26 | Canon Inc | プラズマcvd法による堆積膜形成装置 |
US6162297A (en) * | 1997-09-05 | 2000-12-19 | Applied Materials, Inc. | Embossed semiconductor fabrication parts |
KR20010032824A (ko) * | 1997-12-05 | 2001-04-25 | 테갈 코퍼레이션 | 증착 실드를 갖는 플라즈마 리액터 |
US6482301B1 (en) * | 1998-06-04 | 2002-11-19 | Seagate Technology, Inc. | Target shields for improved magnetic properties of a recording medium |
US6390019B1 (en) | 1998-06-11 | 2002-05-21 | Applied Materials, Inc. | Chamber having improved process monitoring window |
US6416583B1 (en) * | 1998-06-19 | 2002-07-09 | Tokyo Electron Limited | Film forming apparatus and film forming method |
EP1252359B1 (en) * | 1999-12-02 | 2020-03-11 | OEM Group, Inc | Method of operating a platinum etch reactor |
US6440219B1 (en) * | 2000-06-07 | 2002-08-27 | Simplus Systems Corporation | Replaceable shielding apparatus |
US6673199B1 (en) | 2001-03-07 | 2004-01-06 | Applied Materials, Inc. | Shaping a plasma with a magnetic field to control etch rate uniformity |
US6652713B2 (en) | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
US6933508B2 (en) | 2002-03-13 | 2005-08-23 | Applied Materials, Inc. | Method of surface texturizing |
US6812471B2 (en) * | 2002-03-13 | 2004-11-02 | Applied Materials, Inc. | Method of surface texturizing |
KR100487419B1 (ko) * | 2003-02-20 | 2005-05-04 | 엘지전자 주식회사 | 기상 증착 장치 |
JP4234684B2 (ja) | 2003-05-02 | 2009-03-04 | 富士通株式会社 | 磁気記録媒体、磁気記憶装置及び磁気記録媒体の製造方法 |
US20050006223A1 (en) * | 2003-05-07 | 2005-01-13 | Robert Nichols | Sputter deposition masking and methods |
US20050066897A1 (en) * | 2003-09-29 | 2005-03-31 | Seagate Technology Llc | System, method and aperture for oblique deposition |
US20050067272A1 (en) * | 2003-09-29 | 2005-03-31 | Seagate Technology Llc | System method and collimator for oblique deposition |
DE102004004844B4 (de) * | 2004-01-30 | 2009-04-09 | Interpane Entwicklungs- Und Beratungsgesellschaft Mbh & Co Kg | Vorrichtung zum Beschichten eines Substrats mit einer Absorberanordnung |
US20060292310A1 (en) * | 2005-06-27 | 2006-12-28 | Applied Materials, Inc. | Process kit design to reduce particle generation |
US8090451B2 (en) * | 2006-03-30 | 2012-01-03 | Medtronic Inc. | Transvenous active fixation lead system |
US9567666B2 (en) * | 2009-01-12 | 2017-02-14 | Guardian Industries Corp | Apparatus and method for making sputtered films with reduced stress asymmetry |
EP2213765A1 (en) * | 2009-01-16 | 2010-08-04 | Applied Materials, Inc. | Stray coating prevention device, coating chamber device for coating substrates, and method of coating |
US20120087462A1 (en) * | 2010-10-12 | 2012-04-12 | Abdelaziz Ikhlef | Hybrid collimator for x-rays and method of making same |
US9416778B2 (en) * | 2011-04-15 | 2016-08-16 | Rutgers, The State University Of New Jersey | Self-gettering differential pump |
CN103876767B (zh) * | 2013-12-19 | 2017-04-12 | 沈阳东软医疗系统有限公司 | 一种ct机及其x射线准直器 |
US9887072B2 (en) * | 2014-01-23 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for integrated resputtering in a physical vapor deposition chamber |
JP6364295B2 (ja) * | 2014-09-22 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法およびスパッタリング装置 |
JP6088083B1 (ja) * | 2016-03-14 | 2017-03-01 | 株式会社東芝 | 処理装置及びコリメータ |
CN108538694B (zh) * | 2017-03-02 | 2020-04-28 | 北京北方华创微电子装备有限公司 | 一种腔室和等离子体处理装置 |
DE102022103180A1 (de) * | 2022-02-10 | 2023-08-10 | Voestalpine Stahl Gmbh | Verfahren zum Erzeugen von beschichtetem perforiertem Stahlband |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6156277A (ja) * | 1984-08-27 | 1986-03-20 | Hitachi Ltd | 成膜装置 |
JPS6277477A (ja) * | 1985-09-30 | 1987-04-09 | Toshiba Corp | 薄膜形成装置 |
JPH0660391B2 (ja) * | 1987-06-11 | 1994-08-10 | 日電アネルバ株式会社 | スパッタリング装置 |
US4824544A (en) * | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
JPH03120500A (ja) * | 1989-10-04 | 1991-05-22 | Toshiba Corp | 多孔コリメータ及びその製造方法 |
US4988424A (en) * | 1989-06-07 | 1991-01-29 | Ppg Industries, Inc. | Mask and method for making gradient sputtered coatings |
US5135629A (en) * | 1989-06-12 | 1992-08-04 | Nippon Mining Co., Ltd. | Thin film deposition system |
JP2732539B2 (ja) * | 1989-10-06 | 1998-03-30 | 日本電気株式会社 | 真空成膜装置 |
JP2663025B2 (ja) * | 1989-11-24 | 1997-10-15 | 株式会社ジャパンエナジー | 薄膜形成装置 |
JPH04232256A (ja) * | 1990-12-28 | 1992-08-20 | Nikko Kyodo Co Ltd | 薄膜形成装置 |
JP2725944B2 (ja) * | 1991-04-19 | 1998-03-11 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 金属層堆積方法 |
JP2511545Y2 (ja) * | 1991-09-06 | 1996-09-25 | 株式会社ジャパンエナジー | パ―ティクルゲッタ治具キャップ |
US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
JPH0665731A (ja) * | 1992-08-24 | 1994-03-08 | Mitsubishi Electric Corp | 半導体製造装置 |
JPH06295903A (ja) * | 1993-02-09 | 1994-10-21 | Matsushita Electron Corp | スパッタリング装置 |
-
1993
- 1993-07-06 JP JP5191612A patent/JPH0718423A/ja active Pending
-
1994
- 1994-07-01 US US08/269,971 patent/US5804046A/en not_active Expired - Fee Related
- 1994-07-04 EP EP94110385A patent/EP0633599B1/en not_active Expired - Lifetime
- 1994-07-04 DE DE69420902T patent/DE69420902T2/de not_active Expired - Fee Related
- 1994-07-05 KR KR1019940015958A patent/KR0153213B1/ko not_active IP Right Cessation
- 1994-07-06 EP EP94110471A patent/EP0633600A1/en not_active Withdrawn
- 1994-07-15 TW TW083106456A patent/TW294726B/zh active
Also Published As
Publication number | Publication date |
---|---|
DE69420902D1 (de) | 1999-11-04 |
KR0153213B1 (ko) | 1998-12-01 |
EP0633600A1 (en) | 1995-01-11 |
EP0633599B1 (en) | 1999-09-29 |
EP0633599A1 (en) | 1995-01-11 |
US5804046A (en) | 1998-09-08 |
TW294726B (ko) | 1997-01-01 |
DE69420902T2 (de) | 2000-04-13 |
JPH0718423A (ja) | 1995-01-20 |
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