KR950001989A - 디엠디(dmd) 절단후의 유사-웨이퍼 프로세싱 방법 및 픽스처 - Google Patents

디엠디(dmd) 절단후의 유사-웨이퍼 프로세싱 방법 및 픽스처 Download PDF

Info

Publication number
KR950001989A
KR950001989A KR1019940014413A KR19940014413A KR950001989A KR 950001989 A KR950001989 A KR 950001989A KR 1019940014413 A KR1019940014413 A KR 1019940014413A KR 19940014413 A KR19940014413 A KR 19940014413A KR 950001989 A KR950001989 A KR 950001989A
Authority
KR
South Korea
Prior art keywords
fixture
wafer
devices
headspace
cutting
Prior art date
Application number
KR1019940014413A
Other languages
English (en)
Other versions
KR100276996B1 (ko
Inventor
오. 게일 리차드
에이. 미그나디 마이클
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 이. 힐러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 이. 힐러
Publication of KR950001989A publication Critical patent/KR950001989A/ko
Application granted granted Critical
Publication of KR100276996B1 publication Critical patent/KR100276996B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
    • B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
    • B25B11/005—Vacuum work holders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00865—Multistep processes for the separation of wafers into individual elements
    • B81C1/00888—Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/028—Dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Micromachines (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 발명은 웨이퍼(22)상의 단편성 구조가 절단 동작 및 후속 클리닝 동작중에 파편으로터 보호가능한, 디지탈 마이크로미러 디바이스와 같은 마이크로메카니컬 디바이스를 제조하는 방법 및 프로세싱 픽스처에 관한 것이다. 웨이퍼(22)는 절단 커프를 생성하기 위해 웨이퍼(22)를 부분 절단한 후에 진공 픽스처(26)에 부착된다. 그 다음, 웨이퍼(22)의 배면은 절단 커프(24) 아래로 그라인딩되어 디바이스(32)들을 분리시킨다. 각각의 디바이스(32)는 그 위에 있는 헤드스페이스 내의 진공 상태에 의해 픽스처 상에 보유 지지된다. 대안적인 실시예에 있어서, 디바이스들은 픽스처 내에 있는 동안에 웨이퍼를 전체적으로 완전히 절단하므로써 분리된다.

Description

디엠디(DMD) 절단후의 유사-웨이퍼 프로세싱 방법 및 픽스처
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1A도 및 제1B도는 부분 절단된 스트리트 분리 디바이스를 확대하여 도시하는 웨이퍼의 평면도 및 측면도, 제 2 도는 본 발명의 제 1 실시예에 따른 진공 픽스처의 개략적인 평면도.

Claims (15)

  1. 웨이퍼의 프로세싱 중에 웨이퍼 상에 배치된 최소한 1개의 마이크로메카니컬 디바이스를 보호하기 위한 픽스처(fixture)에 있어서, 상기 픽스처의 부분들과 상기 웨이퍼 상의 상기 디바이스들 사이의 접촉을 방지하기 위한 최소한 1개의 헤드스페이스; 상기 헤드스페이스들을 진공 상태로 만들기 위한, 상기 헤드스페이스들에 접속된 최소한 1개의 진공 포트; 및 상기 픽스처와 상기 웨이퍼가 시일(seal)을 형성하도록 상기 최소한 1개의 헤드스페이스를 한정하는 가공된 표면을 포함하는 것을 특징으로 하는 마이크로메카니컬 디바이스를 보호하기 위한 픽스처.
  2. 제 1 항에 있어서, 상기 픽스처가 스테인레스강, 세라믹 및 석영으로 이루어진 재료들의 그룹으로부터 선택되는 것을 특징으로 하는 마이크로메카니컬 디바이스를 보호하기 위한 픽스처.
  3. 제 1 항에 있어서, 상기 픽스처가 견고한 것을 특징으로 하는 마이크로메카니컬 디바이스를 보호하기 위한 픽스처.
  4. 제 1 항에 있어서, 절단 블레이드(saw blade)의 클리어런스(clearance)를 허용하기 위해 상기 가공된 표면에 통로들을 더 포함하는 것을 특징으로 하는 마이크로메카니컬 디바이스를 보호하기 위한 픽스처.
  5. 1개 이상의 마이크로메카니컬 디바이스들을 포함하는 웨이퍼의 프로세싱 방법에 있어서, 상기 각각의 디바이스 위에 있는 헤드스페이스를 한정하는 보호성 픽스처를 상기 웨이퍼 상에 접촉되게 배치하는 단계; 진공 상태를 만들기 위해 상기 헤드스페이스를 진공시키는 단계; 상기 디바이스들을 분리시키기 위해 상기 웨이퍼를 추가 프로세싱하는 단계; 상기 추가 프로세싱 단계에 의해 상기 디바이스들 및 픽스처로부터 생긴 파편(debris)을 클리닝시키는 단계; 및 상기 픽스처로부터 상기 디바이스들을 해제시키기 위해 상기 진공 상태를 제거하는 단계를 포함하는 것을 특징으로 하는 웨이퍼 프로세싱방법.
  6. 제 5 항에 있어서, 상기 웨이퍼를 상기 픽스처에 배치하기 전에 제 1 측면상의 상기 디바이스들 사이를 부분 절단하는 단계를 더 포함하는 것을 특징으로 하는 웨이퍼 프로세싱 방법.
  7. 제 6 항에 있어서, 상기 추가 프로세싱 단계가 상기 제 1 측면에 대향하는 상기 웨이퍼의 측면을 그라인딩하는 단계를 포함하는 것을 특징으로 하는 웨이퍼 프로세싱 방법.
  8. 제 5 항에 있어서, 상기 추가 프로세싱 단계가 상기 웨이퍼를 절단하는 단계를 포함하는 것을 특징으로 하는 웨이퍼 프로세싱 방법.
  9. 제 5 항에 있어서, 상기 추가 프로세싱 단계가 상기 웨이퍼를 부수는 단계를 포함하는 것을 특징으로 하는 웨이퍼 프로세싱 방법.
  10. 제 5 항에 있어서, 상기 픽스처가 스테인레스강, 세라믹 및 석영으로 이루어진 재료들의 그룹으로부터 선택되는 것을 특징으로 하는 웨이퍼 프로세싱 방법.
  11. 제 5 항에 있어서, 상기 픽스처가 가요성(flexible)인 것을 특징으로 하는 웨이퍼 프로세싱 방법.
  12. 웨이퍼의 프로세싱 중에 웨이퍼 상에 배치된 최소한 1개의 마이크로메카니컬 디바이스를 보호하기 위한 픽스처에 있어서, 상기 픽스처와 상기 웨이퍼가 시일을 형성할 수 있도록, 상기 픽스처의 부분들과 상기 웨이퍼 상의 디바이스들 사이의 접촉을 방지하기 위한 최소한 1개의 헤드스페이스를 한정하는 표면; 및 상기 최소한 1개의 헤드스페이스를 진공 상태로 만들기 위한, 상기 최소한 1개의 헤드스페이스에 접속된 최소한 1개의 진공 포트를 포함하는 것을 특징으로 하는 마이크로메카니컬 디바이스를 보호하기 위한 픽스처.
  13. 제12항에 있어서, 상기 픽스처가 스테인레스강, 세라믹 및 석영으로 이루어진 재료들의 그룹으로부터 선택되는 것을 특징으로 하는 마이크로메카니컬 디바이스를 보호하기 위한 픽스처.
  14. 제12항에 있어서, 상기 픽스처가 견고한 것을 특징으로 하는 마이크로메카니컬 디바이스를 보호하기위한 픽스처.
  15. 제12항에 있어서, 절단 블레이드의 클리어런스를 허용하기 위해 상기 표면에 통로들을 포함하는 것을 특징으로 하는 마이크로메카니컬 디바이스를 보호하기 위한 픽스처.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940014413A 1993-06-24 1994-06-23 디지탈 마이크로미러 디바이스 절단 후의 유사-웨이퍼 프로세싱 방법 및 디바이스 보호용 픽스처 KR100276996B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/082.183 1993-06-24
US08/082,183 1993-06-24
US08/082,183 US5445559A (en) 1993-06-24 1993-06-24 Wafer-like processing after sawing DMDs

Publications (2)

Publication Number Publication Date
KR950001989A true KR950001989A (ko) 1995-01-04
KR100276996B1 KR100276996B1 (ko) 2001-02-01

Family

ID=22169571

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940014413A KR100276996B1 (ko) 1993-06-24 1994-06-23 디지탈 마이크로미러 디바이스 절단 후의 유사-웨이퍼 프로세싱 방법 및 디바이스 보호용 픽스처

Country Status (8)

Country Link
US (2) US5445559A (ko)
EP (1) EP0657759B1 (ko)
JP (1) JPH07153823A (ko)
KR (1) KR100276996B1 (ko)
CN (1) CN1054210C (ko)
CA (1) CA2126111A1 (ko)
DE (1) DE69429324T2 (ko)
TW (1) TW258828B (ko)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6219015B1 (en) 1992-04-28 2001-04-17 The Board Of Directors Of The Leland Stanford, Junior University Method and apparatus for using an array of grating light valves to produce multicolor optical images
US5597767A (en) * 1995-01-06 1997-01-28 Texas Instruments Incorporated Separation of wafer into die with wafer-level processing
US5841579A (en) 1995-06-07 1998-11-24 Silicon Light Machines Flat diffraction grating light valve
US6969635B2 (en) * 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US5915370A (en) * 1996-03-13 1999-06-29 Micron Technology, Inc. Saw for segmenting a semiconductor wafer
JP3663728B2 (ja) * 1996-03-28 2005-06-22 信越半導体株式会社 薄板の研磨機
US5872046A (en) * 1996-04-10 1999-02-16 Texas Instruments Incorporated Method of cleaning wafer after partial saw
US6225191B1 (en) * 1996-04-12 2001-05-01 Lucent Technologies Inc. Process for the manufacture of optical integrated circuits
US6686291B1 (en) 1996-05-24 2004-02-03 Texas Instruments Incorporated Undercut process with isotropic plasma etching at package level
US5809987A (en) * 1996-11-26 1998-09-22 Micron Technology,Inc. Apparatus for reducing damage to wafer cutting blades during wafer dicing
US5803797A (en) * 1996-11-26 1998-09-08 Micron Technology, Inc. Method and apparatus to hold intergrated circuit chips onto a chuck and to simultaneously remove multiple intergrated circuit chips from a cutting chuck
US5982553A (en) 1997-03-20 1999-11-09 Silicon Light Machines Display device incorporating one-dimensional grating light-valve array
US5817569A (en) * 1997-05-08 1998-10-06 Texas Instruments Incorporated Method of reducing wafer particles after partial saw
US6088102A (en) 1997-10-31 2000-07-11 Silicon Light Machines Display apparatus including grating light-valve array and interferometric optical system
US6187654B1 (en) 1998-03-13 2001-02-13 Intercon Tools, Inc. Techniques for maintaining alignment of cut dies during substrate dicing
US6319075B1 (en) * 1998-04-17 2001-11-20 Fci Americas Technology, Inc. Power connector
US7314377B2 (en) 1998-04-17 2008-01-01 Fci Americas Technology, Inc. Electrical power connector
US20020098743A1 (en) * 1998-04-17 2002-07-25 Schell Mark S. Power connector
US6271808B1 (en) 1998-06-05 2001-08-07 Silicon Light Machines Stereo head mounted display using a single display device
US6101036A (en) 1998-06-23 2000-08-08 Silicon Light Machines Embossed diffraction grating alone and in combination with changeable image display
US6130770A (en) 1998-06-23 2000-10-10 Silicon Light Machines Electron gun activated grating light valve
US6215579B1 (en) 1998-06-24 2001-04-10 Silicon Light Machines Method and apparatus for modulating an incident light beam for forming a two-dimensional image
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
JP3516592B2 (ja) * 1998-08-18 2004-04-05 沖電気工業株式会社 半導体装置およびその製造方法
JP3485816B2 (ja) * 1998-12-09 2004-01-13 太陽誘電株式会社 ダイシング装置
JP4388640B2 (ja) * 1999-09-10 2009-12-24 株式会社ディスコ Ｃｓｐ基板保持部材及び該ｃｓｐ基板保持部材が載置されるｃｓｐ基板用テーブル
US6635512B1 (en) * 1999-11-04 2003-10-21 Rohm Co., Ltd. Method of producing a semiconductor device by dividing a semiconductor wafer into separate pieces of semiconductor chips
US6479320B1 (en) * 2000-02-02 2002-11-12 Raytheon Company Vacuum package fabrication of microelectromechanical system devices with integrated circuit components
US6521477B1 (en) 2000-02-02 2003-02-18 Raytheon Company Vacuum package fabrication of integrated circuit components
US6387778B1 (en) 2000-02-11 2002-05-14 Seagate Technology Llc Breakable tethers for microelectromechanical system devices utilizing reactive ion etching lag
US6690014B1 (en) 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
US6346030B1 (en) * 2000-05-09 2002-02-12 Sandia Corporation Microdevice having interior cavity with high aspect ratio surface features and associated methods of manufacture and use
KR100332967B1 (ko) * 2000-05-10 2002-04-19 윤종용 디지털 마이크로-미러 디바이스 패키지의 제조 방법
US6425971B1 (en) * 2000-05-10 2002-07-30 Silverbrook Research Pty Ltd Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes
TWI228780B (en) * 2000-05-11 2005-03-01 Disco Corp Semiconductor wafer dividing method
US6335224B1 (en) 2000-05-16 2002-01-01 Sandia Corporation Protection of microelectronic devices during packaging
US7063993B1 (en) * 2000-05-24 2006-06-20 Silverbrook Research Pty Ltd Method of fabricating devices incorporating microelectromechanical systems using at least one UV curable tape
KR100370398B1 (ko) * 2000-06-22 2003-01-30 삼성전자 주식회사 전자 및 ｍｅｍｓ 소자의 표면실장형 칩 규모 패키징 방법
US6707591B2 (en) 2001-04-10 2004-03-16 Silicon Light Machines Angled illumination for a single order light modulator based projection system
US6777681B1 (en) 2001-04-25 2004-08-17 Raytheon Company Infrared detector with amorphous silicon detector elements, and a method of making it
US6982184B2 (en) * 2001-05-02 2006-01-03 Silverbrook Research Pty Ltd Method of fabricating MEMS devices on a silicon wafer
US6747781B2 (en) 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
US6829092B2 (en) 2001-08-15 2004-12-07 Silicon Light Machines, Inc. Blazed grating light valve
JP4309084B2 (ja) * 2001-11-26 2009-08-05 アピックヤマダ株式会社 ダイシング装置
US6800238B1 (en) 2002-01-15 2004-10-05 Silicon Light Machines, Inc. Method for domain patterning in low coercive field ferroelectrics
US7018268B2 (en) * 2002-04-09 2006-03-28 Strasbaugh Protection of work piece during surface processing
US6767751B2 (en) 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6728023B1 (en) 2002-05-28 2004-04-27 Silicon Light Machines Optical device arrays with optimized image resolution
US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
JP2004062938A (ja) * 2002-07-25 2004-02-26 Pioneer Electronic Corp 球面収差補正装置及び球面収差補正方法
US6801354B1 (en) 2002-08-20 2004-10-05 Silicon Light Machines, Inc. 2-D diffraction grating for substantially eliminating polarization dependent losses
US20040036378A1 (en) * 2002-08-20 2004-02-26 Rodgers Murray Steven Dust cover for MEM components
US6875257B2 (en) * 2002-08-20 2005-04-05 Memx, Inc. Particle filter for microelectromechanical systems
US6700173B1 (en) 2002-08-20 2004-03-02 Memx, Inc. Electrically isolated support for overlying MEM structure
US6703675B1 (en) 2002-08-20 2004-03-09 Memx, Inc. Particle filter for partially enclosed microelectromechanical systems
US6712480B1 (en) 2002-09-27 2004-03-30 Silicon Light Machines Controlled curvature of stressed micro-structures
KR100748145B1 (ko) 2002-11-21 2007-08-09 실버브룩 리서치 피티와이 리미티드 하나이상의 자외선 경화 테이프를 사용한 마이크로일렉트로 메커니컬 시스템을 포함하는 장치의 제조 방법
JP2004221187A (ja) * 2003-01-10 2004-08-05 Toshiba Corp 半導体装置の製造装置及びその製造方法
US20040147169A1 (en) * 2003-01-28 2004-07-29 Allison Jeffrey W. Power connector with safety feature
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
US6806997B1 (en) 2003-02-28 2004-10-19 Silicon Light Machines, Inc. Patterned diffractive light modulator ribbon for PDL reduction
JP4566626B2 (ja) * 2004-06-09 2010-10-20 株式会社石川製作所 半導体基板の分断方法および半導体チップの選択転写方法
US7521363B2 (en) 2004-08-09 2009-04-21 Analog Devices, Inc. MEMS device with non-standard profile
US7416984B2 (en) * 2004-08-09 2008-08-26 Analog Devices, Inc. Method of producing a MEMS device
US6994608B1 (en) * 2004-11-12 2006-02-07 Hitachi Global Storage Technologies Netherlands, B.V. Methods of manufacturing sliders
US7109055B2 (en) * 2005-01-20 2006-09-19 Freescale Semiconductor, Inc. Methods and apparatus having wafer level chip scale package for sensing elements
JP2007095780A (ja) * 2005-09-27 2007-04-12 Oki Electric Ind Co Ltd 半導体装置製造用治具と半導体装置製造方法
TW200717519A (en) * 2005-10-28 2007-05-01 Univ Nat Chiao Tung Asynchronous first-in-first-out cell
US7376215B2 (en) * 2005-12-27 2008-05-20 Honeywell International Inc. Measurement of ash composition using scanning high voltage X-ray sensor
US7459686B2 (en) * 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
US7655909B2 (en) * 2006-01-26 2010-02-02 L-3 Communications Corporation Infrared detector elements and methods of forming same
US7462831B2 (en) * 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
GB2434913A (en) * 2006-02-02 2007-08-08 Xsil Technology Ltd Support for wafer singulation
JP2007281053A (ja) * 2006-04-04 2007-10-25 Miraial Kk 薄板収納容器
WO2007114331A1 (ja) * 2006-04-04 2007-10-11 Miraial Co., Ltd. 薄板収納容器
US7748839B2 (en) * 2006-05-09 2010-07-06 Lexmark International, Inc. Handheld printing with reference indicia
US7632698B2 (en) 2006-05-16 2009-12-15 Freescale Semiconductor, Inc. Integrated circuit encapsulation and method therefor
DE102006026467B4 (de) * 2006-06-07 2018-06-28 Texas Instruments Deutschland Gmbh Vorrichtung für das Schleifen eines Wafers
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
US8153980B1 (en) 2006-11-30 2012-04-10 L-3 Communications Corp. Color correction for radiation detectors
US20090061597A1 (en) * 2007-08-30 2009-03-05 Kavlico Corporation Singulator method and apparatus
US7964106B2 (en) 2008-05-30 2011-06-21 Unimicron Technology Corp. Method for fabricating a packaging substrate
USD619099S1 (en) 2009-01-30 2010-07-06 Fci Americas Technology, Inc. Electrical connector
US8323049B2 (en) * 2009-01-30 2012-12-04 Fci Americas Technology Llc Electrical connector having power contacts
JP5571331B2 (ja) * 2009-07-07 2014-08-13 株式会社ディスコ 切削装置
CN102447017B (zh) * 2010-10-13 2014-10-15 展晶科技(深圳)有限公司 发光二极管防水治具以及发光二极管的切割方法
US8765514B1 (en) 2010-11-12 2014-07-01 L-3 Communications Corp. Transitioned film growth for conductive semiconductor materials
KR102342231B1 (ko) * 2014-05-03 2021-12-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 필름상 부재 지지 장치
JP2017054956A (ja) * 2015-09-10 2017-03-16 株式会社ディスコ 被加工物の支持治具
JP2017038072A (ja) * 2016-09-29 2017-02-16 三星ダイヤモンド工業株式会社 脆性材料基板の搬送ヘッド
JP6970554B2 (ja) * 2017-08-21 2021-11-24 株式会社ディスコ 加工方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3809050A (en) * 1971-01-13 1974-05-07 Cogar Corp Mounting block for semiconductor wafers
US3811182A (en) * 1972-03-31 1974-05-21 Ibm Object handling fixture, system, and process
US3994101A (en) * 1973-01-03 1976-11-30 Coburn Optical Industries, Inc. Vacuum chuck with sealable cavity
US3971170A (en) * 1973-01-03 1976-07-27 Coburn Optical Industries, Inc. Vaccum chuck with sealable cavity
US3976288A (en) * 1975-11-24 1976-08-24 Ibm Corporation Semiconductor wafer dicing fixture
US4138304A (en) * 1977-11-03 1979-02-06 General Electric Company Wafer sawing technique
US4213698A (en) * 1978-12-01 1980-07-22 Bell Telephone Laboratories, Incorporated Apparatus and method for holding and planarizing thin workpieces
US4184292A (en) * 1978-03-24 1980-01-22 Revlon, Inc. Vacuum chuck
DE3463227D1 (en) * 1984-08-03 1987-05-27 Loh Kg Optikmaschf Supporting device for vulnerable objects, in particular optical lenses and other optical elements
US5061049A (en) * 1984-08-31 1991-10-29 Texas Instruments Incorporated Spatial light modulator and method
US5291692A (en) * 1989-09-14 1994-03-08 Olympus Optical Company Limited Polishing work holder
ES2090308T3 (es) * 1990-01-31 1996-10-16 Bando Kiko Co Maquina para trabajar placa de cristal.
US5029418A (en) * 1990-03-05 1991-07-09 Eastman Kodak Company Sawing method for substrate cutting operations
JPH04276645A (ja) * 1991-03-04 1992-10-01 Toshiba Corp 化合物半導体ウエーハのダイシング方法
US5393706A (en) * 1993-01-07 1995-02-28 Texas Instruments Incorporated Integrated partial sawing process

Also Published As

Publication number Publication date
TW258828B (ko) 1995-10-01
CN1104341A (zh) 1995-06-28
CA2126111A1 (en) 1994-12-25
EP0657759B1 (en) 2001-12-05
EP0657759A3 (en) 1995-08-09
JPH07153823A (ja) 1995-06-16
CN1054210C (zh) 2000-07-05
DE69429324T2 (de) 2002-08-08
KR100276996B1 (ko) 2001-02-01
US5605489A (en) 1997-02-25
DE69429324D1 (de) 2002-01-17
US5445559A (en) 1995-08-29
EP0657759A2 (en) 1995-06-14

Similar Documents

Publication Publication Date Title
KR950001989A (ko) 디엠디(dmd) 절단후의 유사-웨이퍼 프로세싱 방법 및 픽스처
US5622900A (en) Wafer-like processing after sawing DMDs
US5527744A (en) Wafer method for breaking a semiconductor
US6253758B1 (en) Apparatus for reducing damage to wafer cutting blades during wafer dicing
US5435876A (en) Grid array masking tape process
US6642127B2 (en) Method for dicing a semiconductor wafer
KR950007010A (ko) 마이크로일렉트로닉 기계 디바이스, 디지탈 마이크로미러 디바이스 및 가속도계의 제조 방법
WO2002013236A3 (en) Method and apparatus for removing unwanted substance from semiconductor wafer
KR100336002B1 (ko) 기판상에형성된마이크로-디바이스를분리하는방법
WO2007140144A3 (en) Back side wafer dicing
ATE95949T1 (de) Haltevorrichtung fuer eine scheibe sowie anwendung derselben.
JP2003234310A (ja) 加工物保持用チャック
TW336332B (en) Manufacturing method of semiconductor wafers and the cleaning device
JP3663670B2 (ja) 半導体ウエハの分割装置
KR100284018B1 (ko) 반도체웨이퍼공정
KR980005765A (ko) 웨이퍼 뒷면 연삭공정 후의 웨이퍼 전면 보호용 테이프 제거장치
JP2000223445A (ja) Ｌｓｉダイシング装置及びダイシング方法
KR200250049Y1 (ko) 안전 커터
JPH03177052A (ja) 半導体デバイスのダイシング方法
JPS6153741A (ja) 半導体ウエハの分割装置
KR970025851U (ko) 웨이퍼 절단용 톱날
JPS62270304A (ja) ブレ−ドダイシング装置
JPS5368092A (en) Cut-off method of oxide piezoelectric single crystal
JPH03215961A (ja) ダイシング装置

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080930

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee