KR940009648B1 - 전하결합소자의 제조방법 - Google Patents

전하결합소자의 제조방법 Download PDF

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Publication number
KR940009648B1
KR940009648B1 KR1019910018117A KR910018117A KR940009648B1 KR 940009648 B1 KR940009648 B1 KR 940009648B1 KR 1019910018117 A KR1019910018117 A KR 1019910018117A KR 910018117 A KR910018117 A KR 910018117A KR 940009648 B1 KR940009648 B1 KR 940009648B1
Authority
KR
South Korea
Prior art keywords
oxide film
light receiving
manufacturing
lto
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019910018117A
Other languages
English (en)
Korean (ko)
Other versions
KR930009139A (ko
Inventor
손동균
宇家眞司
Original Assignee
금성일렉트론 주식회사
문정환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사, 문정환 filed Critical 금성일렉트론 주식회사
Priority to KR1019910018117A priority Critical patent/KR940009648B1/ko
Priority to TW081107916A priority patent/TW218054B/zh
Priority to DE4234499A priority patent/DE4234499C2/de
Priority to JP4301546A priority patent/JPH05226631A/ja
Priority to US07/961,476 priority patent/US5246875A/en
Publication of KR930009139A publication Critical patent/KR930009139A/ko
Application granted granted Critical
Publication of KR940009648B1 publication Critical patent/KR940009648B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1019910018117A 1991-10-15 1991-10-15 전하결합소자의 제조방법 Expired - Lifetime KR940009648B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910018117A KR940009648B1 (ko) 1991-10-15 1991-10-15 전하결합소자의 제조방법
TW081107916A TW218054B (cg-RX-API-DMAC7.html) 1991-10-15 1992-10-06
DE4234499A DE4234499C2 (de) 1991-10-15 1992-10-13 Verfahren zum Herstellen eines CCD-Bildsensors
JP4301546A JPH05226631A (ja) 1991-10-15 1992-10-15 Ｃｃｄ映像素子の製造方法
US07/961,476 US5246875A (en) 1991-10-15 1992-10-15 Method of making charge coupled device image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910018117A KR940009648B1 (ko) 1991-10-15 1991-10-15 전하결합소자의 제조방법

Publications (2)

Publication Number Publication Date
KR930009139A KR930009139A (ko) 1993-05-22
KR940009648B1 true KR940009648B1 (ko) 1994-10-15

Family

ID=19321264

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910018117A Expired - Lifetime KR940009648B1 (ko) 1991-10-15 1991-10-15 전하결합소자의 제조방법

Country Status (5)

Country Link
US (1) US5246875A (cg-RX-API-DMAC7.html)
JP (1) JPH05226631A (cg-RX-API-DMAC7.html)
KR (1) KR940009648B1 (cg-RX-API-DMAC7.html)
DE (1) DE4234499C2 (cg-RX-API-DMAC7.html)
TW (1) TW218054B (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2910394B2 (ja) * 1992-03-19 1999-06-23 日本電気株式会社 固体撮像素子およびその製造方法
US5341008A (en) * 1993-09-21 1994-08-23 Texas Instruments Incorporated Bulk charge modulated device photocell with lateral charge drain
US5384267A (en) * 1993-10-19 1995-01-24 Texas Instruments Incorporated Method of forming infrared detector by hydrogen plasma etching to form refractory metal interconnects
KR0136933B1 (ko) * 1994-05-21 1998-04-24 문정환 씨씨디(ccd) 영상소자 및 제조방법
KR0148734B1 (ko) * 1995-06-22 1998-08-01 문정환 시시디 촬상소자 제조방법
US7072650B2 (en) * 2000-11-13 2006-07-04 Meshnetworks, Inc. Ad hoc peer-to-peer mobile radio access system interfaced to the PSTN and cellular networks
JP2002190586A (ja) * 2000-12-22 2002-07-05 Mitsubishi Electric Corp 固体撮像装置およびその製造方法
JP2002314063A (ja) * 2001-02-06 2002-10-25 Mitsubishi Electric Corp Ｃｍｏｓイメージセンサ及びその製造方法
KR100780246B1 (ko) * 2006-09-26 2007-11-27 동부일렉트로닉스 주식회사 이미지 센서 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1595253A (en) * 1977-01-24 1981-08-12 Hitachi Ltd Solid-state imaging devices
FR2533371B1 (fr) * 1982-09-21 1985-12-13 Thomson Csf Structure de grille pour circuit integre comportant des elements du type grille-isolant-semi-conducteur et procede de realisation d'un circuit integre utilisant une telle structure
DE3586452T2 (de) * 1984-10-18 1993-03-18 Matsushita Electronics Corp Festkoerperbildsensor und verfahren zu seiner herstellung.
US4906584A (en) * 1985-02-25 1990-03-06 Tektronix, Inc. Fast channel single phase buried channel CCD
JPS61216472A (ja) * 1985-03-22 1986-09-26 Toshiba Corp 電荷転送装置の製造方法
JPS62124771A (ja) * 1985-11-25 1987-06-06 Sharp Corp 固体撮像装置
JPH0316232A (ja) * 1989-06-14 1991-01-24 Matsushita Electron Corp 電荷結合素子の製造方法
US5135882A (en) * 1989-07-31 1992-08-04 Micron Technology, Inc. Technique for forming high-value inter-nodal coupling resistance for rad-hard applications in a double-poly, salicide process using local interconnect

Also Published As

Publication number Publication date
KR930009139A (ko) 1993-05-22
DE4234499A1 (de) 1993-04-22
TW218054B (cg-RX-API-DMAC7.html) 1993-12-21
US5246875A (en) 1993-09-21
DE4234499C2 (de) 1996-07-11
JPH05226631A (ja) 1993-09-03

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