KR930024114A - 반도체 금속배선의 절연막 및 보호막 증착방법 - Google Patents

반도체 금속배선의 절연막 및 보호막 증착방법 Download PDF

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Publication number
KR930024114A
KR930024114A KR1019920008141A KR920008141A KR930024114A KR 930024114 A KR930024114 A KR 930024114A KR 1019920008141 A KR1019920008141 A KR 1019920008141A KR 920008141 A KR920008141 A KR 920008141A KR 930024114 A KR930024114 A KR 930024114A
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KR
South Korea
Prior art keywords
oxide film
deposition method
metal wiring
protective film
film deposition
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Application number
KR1019920008141A
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English (en)
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KR950004841B1 (ko
Inventor
유형근
구전회
Original Assignee
박성규
대우통신 주식회사
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Application filed by 박성규, 대우통신 주식회사 filed Critical 박성규
Priority to KR1019920008141A priority Critical patent/KR950004841B1/ko
Publication of KR930024114A publication Critical patent/KR930024114A/ko
Application granted granted Critical
Publication of KR950004841B1 publication Critical patent/KR950004841B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 반도체 금속배선의 절연막 및 보호막 증착방법에 관한 것으로써, 금속표면상에 순수산화막을 상압산화막 증착방법(APCVD)으로 단시간(5분) 내에 1300Å 증착하고, 다음으로 인규산유리(PSG)와 순수산화막을 감압산화막 증착방법(LPCVD)으로 각각 9200Å 및 1500Å로 연속 증착하여, 수분침투에 따른 금속의 부식과 힐록(HILLOCK)현상을 방지하여 고품질의 신뢰성을 부여하도록 한 발명이다.

Description

반도체 금속배선의 절연막 및 보호막 증착방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도의 (가) (나) (다) (라) (마)는 본 발명에 따른 절연막 및 보호막 증착공정도.

Claims (1)

  1. 반도체 금속배선의 표면에 순수산화막과 인규산유리(PSG)의 보호막을 증착함에 있어서, 상기 금속표면에 순수산화막을 상입산화막 증착방법(APCVD)에 의해 단시간(5분) 내에 1300Å 증착하고, 순차적으로 인규산유리 순수산화막을 감압산화막 증착방법(LPCVD)에 의해 각각에 소정의 두께로 연속 증착하여서 됨을 특징으로 하는 반도체 금속배선의 절연막 및 보호막 증착방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920008141A 1992-05-14 1992-05-14 반도체 금속배선의 절연막 및 보호막 증착방법 KR950004841B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920008141A KR950004841B1 (ko) 1992-05-14 1992-05-14 반도체 금속배선의 절연막 및 보호막 증착방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920008141A KR950004841B1 (ko) 1992-05-14 1992-05-14 반도체 금속배선의 절연막 및 보호막 증착방법

Publications (2)

Publication Number Publication Date
KR930024114A true KR930024114A (ko) 1993-12-22
KR950004841B1 KR950004841B1 (ko) 1995-05-13

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ID=19333067

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920008141A KR950004841B1 (ko) 1992-05-14 1992-05-14 반도체 금속배선의 절연막 및 보호막 증착방법

Country Status (1)

Country Link
KR (1) KR950004841B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100315010B1 (ko) * 1994-12-14 2003-08-02 주식회사 하이닉스반도체 반도체소자의층간절연막형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100315010B1 (ko) * 1994-12-14 2003-08-02 주식회사 하이닉스반도체 반도체소자의층간절연막형성방법

Also Published As

Publication number Publication date
KR950004841B1 (ko) 1995-05-13

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