JPS5599746A - Method for construction of multi-layer wiring - Google Patents
Method for construction of multi-layer wiringInfo
- Publication number
- JPS5599746A JPS5599746A JP749779A JP749779A JPS5599746A JP S5599746 A JPS5599746 A JP S5599746A JP 749779 A JP749779 A JP 749779A JP 749779 A JP749779 A JP 749779A JP S5599746 A JPS5599746 A JP S5599746A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- layer wiring
- evaporated
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP749779A JPS5599746A (en) | 1979-01-24 | 1979-01-24 | Method for construction of multi-layer wiring |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP749779A JPS5599746A (en) | 1979-01-24 | 1979-01-24 | Method for construction of multi-layer wiring |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5599746A true JPS5599746A (en) | 1980-07-30 |
Family
ID=11667404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP749779A Pending JPS5599746A (en) | 1979-01-24 | 1979-01-24 | Method for construction of multi-layer wiring |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5599746A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8594242B2 (en) | 2001-11-13 | 2013-11-26 | Panasonic Corporation | Method of receiving modulation symbols |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944797A (en) * | 1972-06-19 | 1974-04-27 | ||
JPS51147286A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Manufacturing process of semiconductor |
-
1979
- 1979-01-24 JP JP749779A patent/JPS5599746A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944797A (en) * | 1972-06-19 | 1974-04-27 | ||
JPS51147286A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Manufacturing process of semiconductor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8594242B2 (en) | 2001-11-13 | 2013-11-26 | Panasonic Corporation | Method of receiving modulation symbols |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1174613A (en) | Metallic Connection Layers on Semiconductor Components | |
JPS6472542A (en) | Manufacture of low resistance plane metal contact | |
ATE50379T1 (en) | PROCESS FOR FABRICATION OF COPLANAR MULTILAYER METAL INSULATOR LAYERS ON A SUBSTRATE. | |
WO2001071734A3 (en) | Multi-layer tunneling device with a graded stoichiometry insulating layer | |
FR2409660A1 (en) | PRINTED CIRCUIT SUBSTRATE WITH RESISTANT COATING | |
JPS5599746A (en) | Method for construction of multi-layer wiring | |
JPS5640260A (en) | Manufacture of semiconductor device | |
JPH01109770A (en) | Manufacture of semiconductor device | |
JPS6484668A (en) | Thin film transistor | |
JPS57145340A (en) | Manufacture of semiconductor device | |
JPS5669843A (en) | Manufacture of semiconductor device | |
KR930017092A (en) | Semiconductor device and manufacturing method | |
JPS5728359A (en) | Semiconductor device | |
JPH06109411A (en) | Strain element | |
JPS57188884A (en) | Formation of recessed minute multilayer gate electrode | |
KR930011175B1 (en) | Thin film transistor and manufacturing method thereof | |
JPS55138856A (en) | Method of fabricating semiconductor device | |
JPS5821338A (en) | Manufacture of semiconductor device | |
JPS612360A (en) | Semiconductor device | |
JPS6415952A (en) | Manufacture of semiconductor device | |
KR950009930A (en) | Metal wiring formation method of semiconductor device | |
JPS57188879A (en) | Formation of recess-type micro-multilayer gate electrode | |
JPS57141932A (en) | Semiconductor device | |
JPS5637674A (en) | Manufacture of semiconductor device | |
JPS5986266A (en) | Thin film transistor and manufacture thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20090511 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100511 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20110511 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20120511 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130511 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20130511 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |