KR930020603A - 드라이 에칭 방법 및 장치 - Google Patents

드라이 에칭 방법 및 장치 Download PDF

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KR930020603A
KR930020603A KR1019930003894A KR930003894A KR930020603A KR 930020603 A KR930020603 A KR 930020603A KR 1019930003894 A KR1019930003894 A KR 1019930003894A KR 930003894 A KR930003894 A KR 930003894A KR 930020603 A KR930020603 A KR 930020603A
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vacuum chamber
etching
sample
gas
controlling
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다까오 구미하시
가즈노리 쯔지모또
신이찌 다찌
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가나이 쯔또무
가부시끼가이샤 히다찌세이사꾸쇼
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Abstract

반도체상의 미세 이방성 패터닝에 적합한 드라이 에칭 방법 및 장치로서, 이방성 에칭 및 오버에칭을 용이하게 실행하기 위하여, 첫번째와 두번째 조건사이에 샘플의 에칭 패턴 측벽의 처리를 변경하도록 진공실의 실효 배기속도와 가스 유량중의 적어도 하나를 변경하고 첫번째와 두번째 조건이 퇴적막의 유무 또는 테이퍼각의 유무를 포함한다.
이러한 드라이 에칭 방법 및 장치에 의해, 이방성 에칭 및 오버에칭을 용이하게 실행할 수 있다.

Description

드라이 에칭 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제7도(a)~제7도(e)는 본 발명의 드라이 에칭 방법의 하나의 실시예에 따라 반도체 장치를 제조하는 공정을 도시한 도면.
제8도는 본 발명의 기술에 따라 구성된 드라이 에칭 장치의 하나의 실시예의 단면도.

Claims (14)

  1. 진공실에 샘플을 마련하는 스텝, 상기 진공실에 에칭 가스를 공급하는 스텝, 퇴적막이 상기 샘플의 에칭 패턴 측벽에 발생하는 조건과 퇴적막이 에칭 패턴 측벽에 발생하지 않는 조건사이에서 변하도록 진공실의 실효배기 속도와 가스의 유량중의 적어도 하나를 제어하는 스텝을 포함하는 드라이 에칭 방법.
  2. 특허청구의 범위 제1항에 있어서, 상기 제어하는 스텝은 진공실의 실효 배기 속도와 가스의 유량중의 적어도 하나가 주기적으로 변하도록 실행되는 드라이 에칭방법.
  3. 진공실에 샘플을 마련하는 스텝, 상기 진공에 에칭 가스를 공급하는 스텝, 상기 샘플의 에칭 패턴 측벽이 에칭 패턴 측벽이 테이퍼 형상으로 형성되는 조건과 에칭 패턴 측벽이 수직과 언더커트 형상중의 하나의 형상으로 형성되는 조건사이에서 변하도록 진공실의 실효 배기 속도와 에칭 가스의 유량중의 적어도 하나를 제어하는 스텝을 포함하는 드라이 에칭 방법.
  4. 진공실에 샘플을 마련하는 스텝, 상기 진공에 에칭 가스를 공급하는 스텝, 상기 샘플을 에칭 패턴 측벽의 각도를 변경하기 위해 진공실의 실효 배기 속도와 가스의 유량중의 적어도 하나를 제어하는 스텝을 포함하는 드라이 에칭 방법.
  5. 진공실에 샘플을 마련하는 스텝, 상기 진공실에 에칭 가스를 공급하는 스텝, 상기 진공실로 들어오는 가스 입자수가 증가하여 소정의 값보다 크게되거나 감소하여 소정의 값보다 작게 되도록 진공실의 실효 배기 속도와 가스의 유량중의 적어도 하나를 제어하는 스텝을 포함하는 드라이 에칭 방법.
  6. 특허청구의 범위 제5항에 있어서, 상기 소정의 값은 에칭 가스의 종류, 가스가 플라즈마로 변하는 조건, 에칭될 샘플의 구조중의 적어도 하나에 따라 결정되는 드라이 에칭 방법.
  7. 특허청구의 범위 제5항에 있어서, 상기 소정의 값은 샘플에 들어오는 입자수의 3배인 드라이 에칭 방법.
  8. 진공실에 샘플을 마련하는 스텝, 상기 진공실에 에칭 가스를 공급하는 스텝, 마스크 패턴을 형성하기 위해 상기 샘플의 층을 에칭하는 스텝, 에칭 나머지를 제거하기 위해 상기 층을 오버에칭하는 스텝을 포함하며, 상기 진공실의 실효 배기 속도는 에칭 스텝시보다 오버에칭 스텝시에 더빠른 드라이 에칭 방법.
  9. 진공실에 샘플을 마련하는 스텝, 상기 진공실에 에칭 가스를 공급하는 스텝, 마스크 패턴을 형성하기 위해 상기 층을 에칭하는 스텝, 에칭 나머지를 제거하기위해 상기 층을 오버에칭하는 스텝, 퇴적막이 상기 샘플의 에칭 패턴 측벽에 발생하는 조건과 퇴적막이 에칭 패턴 측벽에 발생하지 않는 조건사이에서 변하도록 진공실의 실효 배기 속도와가스의 유량중의 적어도 하나를 제어하는 스텝을 포함하는 드라이 에칭 방법.
  10. 진공실에 샘플을 마련하는 스텝, 상기 진공실에 에칭 가스를 공급하는 스텝, 상기 샘플을 에칭하는 스텝, 상기 진공실에서 발생된 프라즈마 발광의 강도에 따라 진공실의 실효 배기 속도와 가스의 유량중의 적어도 하나를 제어하는 스텝을 포함하는 드라이 에칭 방법.
  11. 진공실에 샘플을 마련하는 스텝, 상기 진공실에 에칭 가스를 공급하는 스텝, 상기 샘플을 에칭하는 스텝, 상기 에칭 스텝에 의해 노출된 바닥층의 면적에 따라 진공실의 실효 배기 속도와 가스의 유량중의 적어도 하나를 제어하는 스텝을 포함하는 드라이 에칭 방법.
  12. 에칭 가스를 진공실로 도입하는 가스 입구를 갖는 공실, 에칭될 샘플을 지지하는 진공실의 샘플 스테이지, 상기 진공실에서 발생된 플라즈마 발광의 강도를 측정하는 수단, 상기 진공실의 실효 배기 속도를 제어하는 제1의 제어 수단, 상기 입구를 통해 들어오는 에칭 가스의 유량을 제어하는 제2의 수단, 상기 측정하는 수단에서 받은 신호에 따라 상기 제1 및 제2의 수단중의 적어도 하나를 제어하는 제3의 수단을 포함하는 드라이 에칭 방법.
  13. 에칭 가스를 진공실로 도입하는 가스 입구를 갖는 진공실, 진공실에서 에칭될 샘플을 지지하는 진공실의 샘플 스테이지, 상기 에칭 가스에 의해 노출된 바닥층의 면적을 측정하는 수단, 상기 진공실의 실효 배기 속도를 제어하는 제1의 제어 수단, 상기 에칭 가스의 유량을 제어하는 제2의 수단, 상기 측정하는 수단에서 받은 신호에 따라 상기 제1 및 제2의 수단중의 적어도 하나를 제어하는 제3의 제어 수단을 포함하는 드라이 에칭 방법.
  14. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930003894A 1992-03-18 1993-03-15 드라이에칭방법및장치 KR100298954B1 (ko)

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JP2871460B2 (ja) * 1994-05-20 1999-03-17 株式会社日立製作所 シリコンのエッチング方法
US5702564A (en) * 1995-01-03 1997-12-30 Advanced Micro Devices, Inc. Method of etching conductive lines without undercutting
EP1145276A1 (en) * 1998-12-30 2001-10-17 Lam Research Corporation Method and apparatus for etch rate stabilization
US6417013B1 (en) 1999-01-29 2002-07-09 Plasma-Therm, Inc. Morphed processing of semiconductor devices
JP2002353205A (ja) * 2000-08-28 2002-12-06 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられるウェハ処理装置並びに半導体装置
JP4431402B2 (ja) * 2002-04-08 2010-03-17 東京エレクトロン株式会社 プラズマエッチング方法
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JP2012169390A (ja) * 2011-02-14 2012-09-06 Hitachi High-Technologies Corp プラズマ処理方法
CN110005603B (zh) * 2019-04-23 2020-04-14 东北大学 一种微型真空泵抽气性能测试装置及方法
CN112853326B (zh) * 2021-01-06 2022-09-02 长江存储科技有限责任公司 一种膜层沉积方法

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JPS59147433A (ja) * 1983-02-14 1984-08-23 Hitachi Ltd エツチング装置
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
US4793897A (en) * 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
JPH0383335A (ja) * 1989-08-28 1991-04-09 Hitachi Ltd エッチング方法

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DE69325604T2 (de) 2000-03-09
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JPH05267249A (ja) 1993-10-15
KR100298954B1 (ko) 2001-11-30
EP0561402B1 (en) 1999-07-14

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