KR930015131A - 광 통신용 수광소자 - Google Patents

광 통신용 수광소자 Download PDF

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Publication number
KR930015131A
KR930015131A KR1019910023014A KR910023014A KR930015131A KR 930015131 A KR930015131 A KR 930015131A KR 1019910023014 A KR1019910023014 A KR 1019910023014A KR 910023014 A KR910023014 A KR 910023014A KR 930015131 A KR930015131 A KR 930015131A
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KR
South Korea
Prior art keywords
optical communication
metal
light receiving
layer
receiving element
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KR1019910023014A
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English (en)
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KR940008574B1 (ko
Inventor
김앙서
이두환
Original Assignee
정몽헌
현대전자산업 주식회사
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Priority to KR1019910023014A priority Critical patent/KR940008574B1/ko
Publication of KR930015131A publication Critical patent/KR930015131A/ko
Application granted granted Critical
Publication of KR940008574B1 publication Critical patent/KR940008574B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

내용 없음

Description

광 통신용 수광소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 InGaAs MSM(Meral-Semicondnctor-Metal) 수광소자구조의 단면도.
제2도는 종래의 또 다른 InGaAs MSM(Metal-Semicondnctor-Metal) 수광소자구조의 단면도.
제3도는 본 발명에 따른 InGaAs MSM(Metal-Semicondnctor-Metal) 수광소자구조의 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 반 절연 InP 기판 2 : 도프안된 InGaAs층
3,4 : 금속전극 5,15 : 중간층

Claims (2)

  1. 반절연 InP 기판(1)과, 상기 기판(1) 상부에 성장되는 도프안된 InGaAs 수광소자층(2)과, 상기 수광소자층(2) 상부에 형성되는 금속전극(3,4)을 포함하는 In0.53Ga0.47As MSM (Metal - Semiconductor-Metal) 광통신용 수광소자에 있어서, 상기 도프안된 InGaAs층(2)과 상기 금속전극(3,4) 사이에 In0.52Al0.48As와 InGaAs의 초격자층의 중간층(15)을 형성하는 것을 특징으로 하는 광통신용 수광소자.
  2. 제1항에 있어서, 상기 중간층(15)이 In1-x-yAlyAs(여기서, x,y는 Inp 기판과 격자의 정합조건을 만족하는 값) 그레이딩(grading)층을 형성되는 것을 특징으로 하는 In0.53Ga0.47As MSM (Metal-Semiconductor-Metal) 광통신용 수광소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910023014A 1991-12-14 1991-12-14 광 통신용 수광소자 KR940008574B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910023014A KR940008574B1 (ko) 1991-12-14 1991-12-14 광 통신용 수광소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910023014A KR940008574B1 (ko) 1991-12-14 1991-12-14 광 통신용 수광소자

Publications (2)

Publication Number Publication Date
KR930015131A true KR930015131A (ko) 1993-07-23
KR940008574B1 KR940008574B1 (ko) 1994-09-24

Family

ID=19324823

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910023014A KR940008574B1 (ko) 1991-12-14 1991-12-14 광 통신용 수광소자

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KR (1) KR940008574B1 (ko)

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Publication number Publication date
KR940008574B1 (ko) 1994-09-24

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