KR950021821A - 공명 투과광전 소자 및 수직구조 - Google Patents

공명 투과광전 소자 및 수직구조 Download PDF

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KR950021821A
KR950021821A KR1019930026787A KR930026787A KR950021821A KR 950021821 A KR950021821 A KR 950021821A KR 1019930026787 A KR1019930026787 A KR 1019930026787A KR 930026787 A KR930026787 A KR 930026787A KR 950021821 A KR950021821 A KR 950021821A
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South Korea
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layer
gaas
thickness
undoped
resonance
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KR1019930026787A
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KR970011140B1 (ko
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추혜용
박병운
최영완
김영옥
한선규
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양승택
재단법인 한국전자통신연구소
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Priority to KR1019930026787A priority Critical patent/KR970011140B1/ko
Priority to US08/338,117 priority patent/US5446293A/en
Priority to JP6280997A priority patent/JP2843271B2/ja
Publication of KR950021821A publication Critical patent/KR950021821A/ko
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Publication of KR970011140B1 publication Critical patent/KR970011140B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Light Receiving Elements (AREA)

Abstract

본 발명은 공명 투과광전 소자 및 수직구조에 관한 것으로서, 본 발명의 특징은 종래에 사용되고 있는 광검출기나 광전도체와는 상이하게 빛에 의해 생성된 정공이 장벽앞에 축적됨으로써 이중장벽양자우물구조에서의 더욱 많은 전압강하를 유도하여 공명투과다이오드의 피크가 낮은 전압으로 이동하는 새로운 개념으로 동작하며, 또한 공명투과 전류가 빛에 의해 제어되므로 현재 광전소자로 가장 많이 사용되는 PIN다이오드에 비하여 103배 이상 전류량이 많다.
따라서 주변회로를 구동시키기 위하여 광전소자로부터의 출력 신호를 증폭시키는 기능이 생략되므로 회로를 단순화시킬 수 있다.

Description

공명 투과광전 소자 및 수직구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 동작원리 및 특성을 나타낸다.
제4도는 본 발명에 따른 수직구조를 나타낸다.

Claims (2)

  1. 공명투과 다이오드의 공핍층에 밴드갭보다 큰 에너지의 빛을 조사했을때, 정공의 축적에 의하여 부저항 특성은 거의 변화없이 피크가 낮은 전압으로 수평이동하는 동작원리를 이용하는 공명투과 광전소자.
  2. n형 GaAs기판위에 2×1018㎝-3GaAs를 10,000Å성장시키고, 이 위에 4×1017㎝-3도우핑된 n형 GaAs의 간격층(3), 도우핑 안된 100Å두께의 GaAs의 간격층(3)을 형성하고, 이 위에 비공명 투과전류를 줄이기 위하여 도우핑 안된 28Å두께의 AlAs를 양자장벽(4)으로 하여 대칭적으로 성장시키고, 전류량을 증가시키기 위하여 45Å두께의 도우핑 안된 In(비율 0.2)Ga(비율 0.8)As를 양자우물(5)로 하여 상기 양자장벽(4)의 사이에 성장시키며, 이 위에 전압을 인가할때에 공핍층의 길이를 길게하여 빛조사에 의한 이중장벽양자우물구조에서의 전압 강하를 크게 하기 위하여 도우핑 안된 GaAs를 500Å의 두께로 하여 간격층(6)을 형성하고, 입사한 빛이 공핍층에서 흡수되도록 하기 위해서 1×1016㎝-3에서 2×1018㎝-3으로 점진적으로 도우핑된 n형 GaAs를 500Å의 두께로 창층(7)을 형성하고, 이 위에 2×1018㎝-3도우핑된 GaAs에 Al함량을 40%까지 점진적으로 증가시켜 500Å두께로 창층(8)을 형성한 다음, 2×1018㎝-3도우핑된 Al(비율 0.4)Ga(비율 0.6)As를 5000Å의 두께로 창층(9)을 형성하는 것을 특징으로 하는 공명 투과광전 소자의 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930026787A 1993-12-08 1993-12-08 공명 투과광전 소자의 구조 KR970011140B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019930026787A KR970011140B1 (ko) 1993-12-08 1993-12-08 공명 투과광전 소자의 구조
US08/338,117 US5446293A (en) 1993-12-08 1994-11-09 Resonant tunneling opto-electronic device having a plurality of window layers
JP6280997A JP2843271B2 (ja) 1993-12-08 1994-11-15 共鳴トンネリング光電素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930026787A KR970011140B1 (ko) 1993-12-08 1993-12-08 공명 투과광전 소자의 구조

Publications (2)

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KR950021821A true KR950021821A (ko) 1995-07-26
KR970011140B1 KR970011140B1 (ko) 1997-07-07

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US (1) US5446293A (ko)
JP (1) JP2843271B2 (ko)
KR (1) KR970011140B1 (ko)

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CN112219286A (zh) * 2020-02-19 2021-01-12 天津三安光电有限公司 一种用于多结led的隧穿结、多结led及其制备方法

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FR2719417B1 (fr) * 1994-04-28 1996-07-19 Person Henri Le Composant à hétérostructure semi-conductrice, commande par la lumière pour la génération d'oscillations hyperfréquences.
KR0138851B1 (ko) * 1994-10-24 1998-04-27 양승택 광제어 공명투과 진동자 및 그의 제조방법
GB2295488B (en) * 1994-11-24 1996-11-20 Toshiba Cambridge Res Center Semiconductor device
US5548140A (en) * 1995-06-06 1996-08-20 Hughes Aircraft Company High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt
KR100244524B1 (ko) * 1997-01-16 2000-02-01 정선종 광제어공명투과다이오드
KR100249788B1 (ko) * 1997-11-17 2000-03-15 정선종 피아이엔 다이오드를 이용한 광-유기 전기-광학 오실레이터
DE10134665C1 (de) * 2001-07-20 2002-09-05 Infineon Technologies Ag Betriebsverfahren für ein Halbleiterbauelement, geeignet für ESD-Schutz
US7008806B1 (en) 2004-08-24 2006-03-07 The United States Of America As Represented By The Secretary Of The Army Multi-subband criterion for the design of a double-barrier quantum-well intrinsic oscillator
CN102265411B (zh) * 2008-12-26 2014-06-11 住友电气工业株式会社 受光元件、受光元件阵列、制造受光元件的方法以及制造受光元件阵列的方法
EP2469608B1 (de) * 2010-12-24 2018-09-05 Dechamps & Sreball GbR Bipolardiode mit optischem Quantenstrukturabsorber
JP5648915B2 (ja) * 2011-02-03 2015-01-07 日本電信電話株式会社 共鳴トンネルダイオードおよびテラヘルツ発振器
US9306115B1 (en) * 2015-02-10 2016-04-05 Epistar Corporation Light-emitting device
EP3131124B1 (en) 2015-08-14 2019-09-25 Julius-Maximilians-Universität Würzburg Infrared photodetector based on resonant tunneling diode
JP6589662B2 (ja) * 2016-01-27 2019-10-16 住友電気工業株式会社 半導体積層体および受光素子
CN111509056A (zh) * 2020-04-29 2020-08-07 上海空间电源研究所 可有效利用窗口层内电子空穴对的太阳电池的窗口层结构

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JPH0770743B2 (ja) * 1987-11-10 1995-07-31 富士通株式会社 共鳴トンネリングバリア構造デバイス
JPH02184083A (ja) * 1989-01-11 1990-07-18 Hitachi Ltd 半導体装置
US5270225A (en) * 1992-02-21 1993-12-14 Motorola, Inc. Method of making a resonant tunneling semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112219286A (zh) * 2020-02-19 2021-01-12 天津三安光电有限公司 一种用于多结led的隧穿结、多结led及其制备方法
CN112219286B (zh) * 2020-02-19 2022-11-29 天津三安光电有限公司 一种用于多结led的隧穿结、多结led及其制备方法

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US5446293A (en) 1995-08-29
JPH07202247A (ja) 1995-08-04
JP2843271B2 (ja) 1999-01-06
KR970011140B1 (ko) 1997-07-07

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