KR930011024B1 - Manufacturing method of electrode pad for hall effect device - Google Patents

Manufacturing method of electrode pad for hall effect device Download PDF

Info

Publication number
KR930011024B1
KR930011024B1 KR1019890020233A KR890020233A KR930011024B1 KR 930011024 B1 KR930011024 B1 KR 930011024B1 KR 1019890020233 A KR1019890020233 A KR 1019890020233A KR 890020233 A KR890020233 A KR 890020233A KR 930011024 B1 KR930011024 B1 KR 930011024B1
Authority
KR
South Korea
Prior art keywords
electrode pad
thin film
film
manufacturing
insb
Prior art date
Application number
KR1019890020233A
Other languages
Korean (ko)
Other versions
KR910013471A (en
Inventor
송이헌
고용태
Original Assignee
삼성전기 주식회사
서주인
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전기 주식회사, 서주인 filed Critical 삼성전기 주식회사
Priority to KR1019890020233A priority Critical patent/KR930011024B1/en
Publication of KR910013471A publication Critical patent/KR910013471A/en
Application granted granted Critical
Publication of KR930011024B1 publication Critical patent/KR930011024B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)

Abstract

The method for mfg. an electrode pad of a hall device (1) is characterized by (a) covering an insulating film (3) on the ferrite substrate (2), (b) depositing an thin InSb film (4) on the insulating film (3), and laminating an thin aluminium (Al) film (5) of 1.8-5.0 μm thickness on the film (3), and (c) covering a negative type photoresist (6) on the film (5), and etching the film (5) with 20 % sodium hydroxide (NaOH) solution as an etchant.

Description

Hall 소자의 전극패드 제조방법Manufacturing method of electrode pad of Hall device

제1도는 본 발명에 따른 Hall 소자의 전체 평면도.1 is an overall plan view of a Hall device according to the present invention.

제2도는 본 발명에 따른 전극패드의 제조공정을 순서대로 나타낸 단면도.2 is a cross-sectional view sequentially showing a manufacturing process of the electrode pad according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : Hall 소자 2 : 기판1: Hall element 2: Substrate

3 : 절연막 4 : InSb 박막3: insulating film 4: InSb thin film

5 : Al 박막 6 : 포토레지스트5: Al thin film 6: Photoresist

본 발명은 안티몬화 인디움(InSb)박막을 사용하는 Hall 소자의 전극패드(Electrode Pad)를 제조하는 방법에 관한 것으로, 특히 알루미늄(Al)으로만 이루어지는 단일막 구조의 전극패드를 제조하는 방법에 관한 것이다.The present invention relates to a method for manufacturing an electrode pad (Electrode Pad) of the Hall element using an anti-monium (InSb) thin film, in particular to a method for manufacturing a single-layer electrode pad consisting of only aluminum (Al) It is about.

선출원된 1988년 특허출원 제9420호와 같이 종래에는 Cu, Ni, Ag, Au 등을 도금하여 다층막 구조로 Hall 소자의 전극 패드를 제작하였다.As in 1988 Patent Application No. 9620, which was previously filed, conventionally, Cu, Ni, Ag, Au, and the like were plated to fabricate a Hall device electrode pad in a multilayer film structure.

이와 같이 종래에는 Cu/Ni/Ag/Au의 다층막 구조로 전극의 패드를 제작함에 따라서 제작공정이 복잡해지고 그 작업 또한 쉽지가 않을 뿐만 아니라, 소자의 제작공정을 고려할 때, 이 다층막 구조의 패드의 형성공정에 소요되는 시간이 상대적으로 너무 많아 비경제적이고 다층막구조의 패드는 소자의 가격을 상승시키는 주 요인들 중 하나로서 작용하였다.As described above, as the pad of the electrode is manufactured in the multilayer film structure of Cu / Ni / Ag / Au, the manufacturing process becomes complicated and the operation is not easy, and considering the manufacturing process of the device, the pad of the multilayer film structure Due to the relatively long time required for the forming process, the pads of the multi-layered film structure acted as one of the main factors to increase the price of the device.

본 발명은 Hall 소자의 전극패드를 제조함에 있어서 제작원가의 절감과 공정의 간소화를 꾀하는데 그 목적이 있다.The present invention aims to reduce the manufacturing cost and simplify the process in manufacturing the electrode pad of the Hall device.

첨부도면에 의하여 본 발명의 실시예를 상세히 설명하면 다음과 같다.When explaining the embodiment of the present invention in detail by the accompanying drawings as follows.

본 발명은 InSb Hall 소자(1)를 제작함에 있어서, InSb 박막(4)상에 전극패드 재료를 Al만을 사용한 단일막 구조로 하여 Al의 두께를 1.8~5㎛로 하는 적층구조로 증착하고 상기 증착막에 대하여 사진 시각(Photo-lithography) 작업시 사용하는 포토 레지스트(Photo resist)(6)는 네가티브 타입(Negative Type)으로 하여 수행함으로써, 이루어지는데 이를 공정별로 나누어 설명하면 다음과 같다.In the present invention, in fabricating the InSb Hall device 1, a single film structure using only Al as an electrode pad material is deposited on the InSb thin film 4 in a stacked structure having an Al thickness of 1.8 to 5 탆 and the deposition film. The photo resist 6 used in the photo-lithography operation is performed by performing a negative type, which will be described by dividing according to processes.

[제1공정][Step 1]

본 공정은 준비공정으로써 제2a도에 도시된 바와 같이 페라이트(Ferrite)재질의 기판(2)상에 절연막(Si3N4,SiO2)(3)을 피막하고 그 위에 십자형의 InSb(4)을 1.5㎛ 두께로 증착한 후 십자형의 패턴(Pattern)으로 형성된 InSb 박막(4) 및 그 주위에 고온증착(Thernal Evaporation) 방법을 이용하여 Al 박막(5)을 1.8~5.0㎛의 두께로 증착한다.This process is a preparatory process, as shown in FIG. 2A, an insulating film (Si 3 N 4 , SiO 2 ) 3 is formed on a ferrite substrate 2, and a cross-shaped InSb (4) is formed thereon. Is deposited to a thickness of 1.5 μm and then the Al thin film 5 is deposited to a thickness of 1.8 to 5.0 μm by using an InSb thin film 4 formed in a cross pattern and a thermal evaporation method. .

이때, InSb 박막(4)의 두께보다 Al 박막(5)이 두꺼워야 하는데, 그 이유는 Al 박막(5)이 상기 InSb 박막(4)의 스텝(step) 부분을 커버(cover)해야 하기 때문이다.At this time, the Al thin film 5 should be thicker than the thickness of the InSb thin film 4 because the Al thin film 5 should cover the step portion of the InSb thin film 4. .

그후, 사진식각에 의한 전극패드의 패턴을 형성하기 위해 네가티브 타입의 포토레지스트(6)를 도포한다.Thereafter, a negative type photoresist 6 is applied to form a pattern of the electrode pad by photolithography.

이때, 네가티브타입의 포토레지스터(6)를 도포하는 이유는 Al 박막(5)으로 전극패드를 만들기 위해서는 필수적으로 패터닝(patterning) 공정을 거쳐햐 한다.In this case, the reason for applying the negative type photoresist 6 is to pass through the patterning process to make the electrode pad from the Al thin film (5).

전극패드의 패턴을 형상화할때 에칭(etching) 공정에서 Al의 식각용액(etchant)으로 H3PO4: HNO3: CH3COOH=22 : 1 : 1 등과 같은 산성용액 또는 NaOH 등과 같은 알카리성용액을 사용해야 한다. 그러나 산성용액은 에칭시 InSb 박막(4)을 녹이기 때문에 식각용액으로 부적당하다.When forming the electrode pad pattern, an acid solution such as H 3 PO 4 : HNO 3 : CH 3 COOH = 22: 1: 1 or an alkaline solution such as NaOH is used as an etching solution of Al in an etching process. Should be used. However, the acid solution is not suitable as an etching solution because it dissolves the InSb thin film 4 during etching.

알카리성용액은 InSb 박막(4)에 손상을 주지는 않지만 일반적인 포지티브타입의 포토레지스트를 녹이는 문제점이 있다.The alkaline solution does not damage the InSb thin film 4 but has a problem of melting a general positive type photoresist.

따라서 알카리성에 견디는 네가티브타입의 포토레지스트(6)를 사용하면 상기와 같은 문제점을 해결할 수 있고 단일막으로 구성된 Al 전극패드를 완성할 수 있게 된다.Therefore, the use of the negative type photoresist 6 that withstands alkalinity can solve the above problems and complete the Al electrode pad composed of a single film.

[제2공정][Step 2]

에칭하는 공정인바 반도체 미세형상의 제작을 위하여 에칭작업을 수행하는데 제2b도와 같이 포토레지스트패턴(Photoresist Pattern)을 형성한 후 20% NaOH 수용액으로 상온에서 Al 박막(5)을 에칭시키면 제2c도와 같이 전극패드가 형성된다.The etching process is performed to fabricate semiconductor microstructures. After forming a photoresist pattern as shown in FIG. 2B, the Al thin film 5 is etched at room temperature with a 20% NaOH aqueous solution as shown in FIG. 2C. An electrode pad is formed.

이때 에칭 공정에서 포토레지스트(6)로서 알카리성에 견디는 특성이 있는 네가티브타입(Negative Type)을 사용함으로써 부식재로서 NaOH 수용액을 사용할 수 있으므로 InSb 박막(4)에는 전혀 손상이 가지 않는다.At this time, since the NaOH aqueous solution can be used as a corrosive material by using a negative type (Negative Type) that has an alkali resistance property as the photoresist 6 in the etching process, the InSb thin film 4 is not damaged at all.

상기 에칭공정이 끝난후 Al 박막(5) 패드 위에 남아 있는 포토레지스트(6)를 제거하면 제2d도와 같이 공정을 간소화하여 작업시간의 단축과 Hall 소자(1)의 전극재료를 Al만으로 전극패드를 형성하여 원가절감등의 잇점이 있다.After the etching process is finished, the photoresist 6 remaining on the Al thin film 5 pad is removed, thereby simplifying the process as shown in FIG. 2D, and shortening the working time and using only Al as the electrode material of the Hall element 1. There are advantages such as cost reduction.

Claims (3)

InSb 박막을 사용하는 Hall 소자(1)의 전극패드를 제조함에 있어서, 기판(2) 상에 절연막(3)을 피막하고 증착된 InSb 박막(4)상에 전극패드를 Al 박막(5)만으로 적층하고, 상기 Al 박막(5) 위에 네가티브타입(negative type)의 포토레지스트(Photoresist)(6)를 도포한 후에 에칭(Etching)한 것을 특징으로 하는 Hall 소자의 전극패드 제조방법.In manufacturing the electrode pad of the Hall element 1 using the InSb thin film, an insulating film 3 is formed on the substrate 2 and the electrode pad is laminated only on the deposited InSb thin film 4 with the Al thin film 5 only. And applying a negative type photoresist (6) onto the Al thin film (5), followed by etching. 제1항에 있어서, 증착되는 Al 박막(5)의 두께를 1.8~5.0㎛를 형성한 것을 특징으로 하는 Hall 소자의 전극패드 제조방법.The electrode pad manufacturing method of a Hall device according to claim 1, wherein the Al thin film (5) to be deposited has a thickness of 1.8 to 5.0 mu m. 제1항에 있어서, Al 박막(5) 에칭을 20% NaOH 수용액을 상온에서 사용한 것을 특징으로 하는 Hall 소자의 전극패드 제조방법.The method of manufacturing an electrode pad of a Hall device according to claim 1, wherein the Al thin film (5) is etched using a 20% aqueous NaOH solution at room temperature.
KR1019890020233A 1989-12-29 1989-12-29 Manufacturing method of electrode pad for hall effect device KR930011024B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890020233A KR930011024B1 (en) 1989-12-29 1989-12-29 Manufacturing method of electrode pad for hall effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890020233A KR930011024B1 (en) 1989-12-29 1989-12-29 Manufacturing method of electrode pad for hall effect device

Publications (2)

Publication Number Publication Date
KR910013471A KR910013471A (en) 1991-08-08
KR930011024B1 true KR930011024B1 (en) 1993-11-19

Family

ID=19294281

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890020233A KR930011024B1 (en) 1989-12-29 1989-12-29 Manufacturing method of electrode pad for hall effect device

Country Status (1)

Country Link
KR (1) KR930011024B1 (en)

Also Published As

Publication number Publication date
KR910013471A (en) 1991-08-08

Similar Documents

Publication Publication Date Title
EP0361752B1 (en) Selective solder formation on printed circuit boards
CN109254423B (en) Method for manufacturing thick-film wire electrode of lithium niobate electro-optical device
US4451554A (en) Method of forming thin-film pattern
KR930011024B1 (en) Manufacturing method of electrode pad for hall effect device
KR920006202B1 (en) Method of manufacturing electrode rad of hall element
JPS6459936A (en) Manufacture of integrated circuit
KR100408029B1 (en) Method for forming electrode pattern of display
JPH06342796A (en) Forming method of bump electrode
KR100216732B1 (en) Etching method of aluminium thin film
JPS5978586A (en) Formation of niobium pattern
JPH0350734A (en) Manufacture of integrated circuit
JPS62291125A (en) Manufacture of circuit board
KR100710645B1 (en) Method for forming the metal line in semiconductor device
JP2024059045A (en) Manufacturing method of GSR element
KR0138008B1 (en) Fabrication method of metal contact in semiconductor device
JP3036300B2 (en) Method for manufacturing TAB tape and method for manufacturing semiconductor device
JPS58161346A (en) Formation of metallic projected electrode
JPS6226843A (en) Formation of electrode metal wiring pattern
JPH0770638B2 (en) Microwave IC substrate manufacturing method
JPH04102341A (en) Manufacture of tab tape
JPH02198141A (en) Manufacture of bump electrode of semiconductor device
JPH03127827A (en) Manufacture of semiconductor device
JP2000031612A (en) Wiring board
JPH10308397A (en) Electrode terminal and manufacture therefor
JPS61158166A (en) Manufacture of substrate for bump metal formation

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20010912

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee