JPH0350734A - Manufacture of integrated circuit - Google Patents

Manufacture of integrated circuit

Info

Publication number
JPH0350734A
JPH0350734A JP1185356A JP18535689A JPH0350734A JP H0350734 A JPH0350734 A JP H0350734A JP 1185356 A JP1185356 A JP 1185356A JP 18535689 A JP18535689 A JP 18535689A JP H0350734 A JPH0350734 A JP H0350734A
Authority
JP
Japan
Prior art keywords
film
formed
au
photo resist
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1185356A
Inventor
Tatsuichiro Arikawa
Naohiro Moriya
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP1185356A priority Critical patent/JPH0350734A/en
Publication of JPH0350734A publication Critical patent/JPH0350734A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Abstract

PURPOSE: To increase adhesion strength of a bump type electrode by a method wherein in a process forming a photo resist film on a metal film in which an adhesion layer, a mutual diffusion barrier film, and a base electrode film are formed in order, the aperture is formed in the inside of a passivation aperture part.
CONSTITUTION: A Ti film 13 as an adhesion layer, a Pt film 14 as a mutual diffusion barrier film, and an Au film 15 as a plating base layer are formed in order by sputtering method, on a passivation film 11 and an electrode pad 12 of an integrated circuit surface in which the processes of diffusion, wiring, and an insulating film are finished. A photo resist coating film 16 is spread on a metal film, its aperture part for forming a bump type electrode is formed in the inside of the passivation aperture part. An Au bump 18 is formed in a photo resist aperture part 17 by electroplating of Au. After the photo resist 16 is eliminated by using release liquid, the Ti film 13, the Pt film 14, and an Au film 15 are etched and eliminated by dry etching using the Au bump 18 as a mask. Thereby a bump type electrode which is excellent in adhesion strength and has high mounting stability can be easily manufactured.
COPYRIGHT: (C)1991,JPO&Japio
JP1185356A 1989-07-18 1989-07-18 Manufacture of integrated circuit Pending JPH0350734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1185356A JPH0350734A (en) 1989-07-18 1989-07-18 Manufacture of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1185356A JPH0350734A (en) 1989-07-18 1989-07-18 Manufacture of integrated circuit

Publications (1)

Publication Number Publication Date
JPH0350734A true JPH0350734A (en) 1991-03-05

Family

ID=16169356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1185356A Pending JPH0350734A (en) 1989-07-18 1989-07-18 Manufacture of integrated circuit

Country Status (1)

Country Link
JP (1) JPH0350734A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2707797A1 (en) * 1993-07-15 1995-01-20 Samsung Electronics Co Ltd Method of making bumps for chips.
JP2002170840A (en) * 2000-09-25 2002-06-14 Ibiden Co Ltd Manufacturing method of semiconductor device and multi-layer printed circuit board including the same
US7842887B2 (en) 2000-02-25 2010-11-30 Ibiden Co., Ltd. Multilayer printed circuit board
US7852634B2 (en) 2000-09-25 2010-12-14 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2707797A1 (en) * 1993-07-15 1995-01-20 Samsung Electronics Co Ltd Method of making bumps for chips.
US7842887B2 (en) 2000-02-25 2010-11-30 Ibiden Co., Ltd. Multilayer printed circuit board
US8186045B2 (en) 2000-02-25 2012-05-29 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US8438727B2 (en) 2000-02-25 2013-05-14 Ibiden Co., Ltd. Multilayer printed circuit board and multilayer printed circuit board manufacturing method
US8079142B2 (en) 2000-02-25 2011-12-20 Ibiden Co., Ltd. Printed circuit board manufacturing method
JP2002170840A (en) * 2000-09-25 2002-06-14 Ibiden Co Ltd Manufacturing method of semiconductor device and multi-layer printed circuit board including the same
US7893360B2 (en) 2000-09-25 2011-02-22 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US7908745B2 (en) 2000-09-25 2011-03-22 Ibiden Co., Ltd. Method of manufacturing multi-layer printed circuit board
US7999387B2 (en) 2000-09-25 2011-08-16 Ibiden Co., Ltd. Semiconductor element connected to printed circuit board
US7852634B2 (en) 2000-09-25 2010-12-14 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board
US7855342B2 (en) 2000-09-25 2010-12-21 Ibiden Co., Ltd. Semiconductor element, method of manufacturing semiconductor element, multi-layer printed circuit board, and method of manufacturing multi-layer printed circuit board

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