JPH03198342A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH03198342A
JPH03198342A JP33966089A JP33966089A JPH03198342A JP H03198342 A JPH03198342 A JP H03198342A JP 33966089 A JP33966089 A JP 33966089A JP 33966089 A JP33966089 A JP 33966089A JP H03198342 A JPH03198342 A JP H03198342A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
wiring
formed
electroplating
film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33966089A
Inventor
Takaaki Kobayashi
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To prevent generation of etching residue and reattachment of foreign matter on a bump electrode surface, and sufficiently secure adhesion between a bump electrode and a semiconductor substrate, by providing a process for forming a wiring for elements and a wiring for electroplating.
CONSTITUTION: After a silicon nitride film 2 and an aluminum film 3 are formed on a semiconductor substrate 1, a first photoresist pattern 4 is formed. By etching method using the pattern 4 as a mask, unnecessary parts of the film 3 are eliminated, and a wiring for elements necessary for a semiconductor device is formed. Said wiring for elements is formed as an aluminum wiring 3a, and a wiring 3b for electroplating is formed in a dicing line region 1. After electroplating process, the unnecessary wiring 3b is eliminated, and each protruding electrode is subjected to dielectric isolation. Hence electroplating is enabled by using polyimide resin 9, which is a final protecting film, as a mask. Thereby generation of etching residue and reattachment of foreign matter on the surface of a gold bump electrode 11 can be prevented, and adhesion between the electrode 11 and the substrate 1 can sufficiently be secured.
COPYRIGHT: (C)1991,JPO&Japio
JP33966089A 1989-12-26 1989-12-26 Manufacture of semiconductor device Pending JPH03198342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33966089A JPH03198342A (en) 1989-12-26 1989-12-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33966089A JPH03198342A (en) 1989-12-26 1989-12-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH03198342A true true JPH03198342A (en) 1991-08-29

Family

ID=18329598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33966089A Pending JPH03198342A (en) 1989-12-26 1989-12-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH03198342A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224200A (en) * 1992-01-27 1994-08-12 Gennum Corp Integrated semiconductor device and method for forming bump structure on integrated semiconductor device
WO1998025297A1 (en) * 1996-12-04 1998-06-11 Seiko Epson Corporation Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
EP1231629A1 (en) * 2001-02-07 2002-08-14 SGS-THOMSON MICROELECTRONICS S.r.l. A method of forming metal connection elements in integrated circuits
US6518665B1 (en) * 1997-07-11 2003-02-11 Delaware Capital Formation, Inc. Enhanced underfill adhesion
JP2005217445A (en) * 1996-12-04 2005-08-11 Seiko Epson Corp Production process of semiconductor device
US7183189B2 (en) 1996-12-04 2007-02-27 Seiko Epson Corporation Semiconductor device, circuit board, and electronic instrument

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224200A (en) * 1992-01-27 1994-08-12 Gennum Corp Integrated semiconductor device and method for forming bump structure on integrated semiconductor device
US7183189B2 (en) 1996-12-04 2007-02-27 Seiko Epson Corporation Semiconductor device, circuit board, and electronic instrument
US8115284B2 (en) 1996-12-04 2012-02-14 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board and electronic instrument
US6475896B1 (en) 1996-12-04 2002-11-05 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7888260B2 (en) 1996-12-04 2011-02-15 Seiko Epson Corporation Method of making electronic device
US7842598B2 (en) 1996-12-04 2010-11-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US6730589B2 (en) 1996-12-04 2004-05-04 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
JP2005217445A (en) * 1996-12-04 2005-08-11 Seiko Epson Corp Production process of semiconductor device
WO1998025297A1 (en) * 1996-12-04 1998-06-11 Seiko Epson Corporation Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
US7470979B2 (en) 1996-12-04 2008-12-30 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7511362B2 (en) 1996-12-04 2009-03-31 Seiko Epson Corporation Electronic component and semiconductor device, method of making the same and method of mounting the same, circuit board, and electronic instrument
US7521796B2 (en) 1996-12-04 2009-04-21 Seiko Epson Corporation Method of making the semiconductor device, circuit board, and electronic instrument
JP4513973B2 (en) * 1996-12-04 2010-07-28 セイコーエプソン株式会社 A method of manufacturing a semiconductor device
US8384213B2 (en) 1996-12-04 2013-02-26 Seiko Epson Corporation Semiconductor device, circuit board, and electronic instrument
US6518665B1 (en) * 1997-07-11 2003-02-11 Delaware Capital Formation, Inc. Enhanced underfill adhesion
US6589816B2 (en) 2001-02-07 2003-07-08 Stmicroelectronics S.R.L. Method of forming metal connection elements in integrated circuits
EP1231629A1 (en) * 2001-02-07 2002-08-14 SGS-THOMSON MICROELECTRONICS S.r.l. A method of forming metal connection elements in integrated circuits

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