JPS6226843A - Formation of electrode metal wiring pattern - Google Patents

Abstract

PURPOSE:To prevent an electrode metal wiring pattern from deviating or disconnecting by a method wherein, after a recessed part is formed in advance in part of the part, which corresponds to the electrode metal wiring pattern, of the first interlayer insulating film, the electrode metal wiring pattern is formed in the recessed part. CONSTITUTION:A negative-type photosensitive resin film 7 is applied and an exposure is performed by irradiating light L'00 through a first masking plate 8, whereon the pattern to be transferred is already drawn. The opening 9 of the photosensitive resin film 7 is formed, subsequently a recessed part 10 is formed in the part, which is exposing in the opening 9, of a first interlayer insulating film 2 using an etching method. After this, when the photosensitive resin film 7 is removed, the first interlayer insulating film 2 having the recessed part 10 is obtained. After the formation of the recessed part 10, a metal film for electrode wiring, which consists of an Al film, is formed, and after that, a second photosensitive resin film 12 consisting of a positive-type photosensitive resin is applied. After that, the electrode metal wiring pattern is formed in the recessed part. By this way, even though the electrode metal wiring pattern is a long wiring pattern, the deviation or disconnection of the pattern can be prevented in the latter process.

Description

DETAILED DESCRIPTION OF THE INVENTION C. Industrial Application Field The present invention relates to a method for forming an electric bridge metal wiring pattern in the manufacturing process of semiconductor devices and the like.

[Conventional technology]

FIGS. 2A to 2G are cross-sectional views showing each state in the main steps of a conventional method for forming an electrode metal wiring pattern. In this method, first, as shown in FIG.
A first interlayer insulating film (2) made of, for example, a silicon oxide film or a silicon nitride film is formed on the first interlayer insulating film (2) by, for example, chemical vapor deposition or sputtering. Thereafter, an electrode wiring metal film (3) made of, for example, an aluminum film is formed on the first interlayer insulating film (2) by using, for example, a spackle method. Next, as shown in FIG. 2B, a photosensitive resin film (4
), for example, a positive photosensitive resin film (4) whose exposed portions are removed in a subsequent development step is applied. Next, the second
As shown in FIG. C, exposure is performed by irradiating light as indicated by the dashed arrow through a mask plate (5) on which the electric bridge wiring pattern to be transferred is drawn. Thereafter, through a development process, the exposed portions of the photosensitive resin film (4) are removed, and a photosensitive resin film pattern (4a) as shown in the second diagram is formed. Thereafter, when the metal film (3) for electrode wiring corresponding to the exposed area is removed using an etching method using chemical or physical effects, a photosensitive resin film pattern (4a) is formed as shown in FIG. 2E. An electrode metal wiring pattern (3a) remains under the pattern, and when the photosensitive resin film pattern (4a) is further removed, an electrode metal wiring pattern (3a) as shown in FIG. 2F can be formed. After this, as shown in FIG. 2G, a second layer is placed on the electrode metal wiring pattern (3a).
An interlayer insulating film (6) is formed to form an electrode metal wiring pattern (
3a), and in the case of a semiconductor device with a multilayer wiring structure, a metal film for electrode wiring (not shown) is further formed thereon to form a wiring pattern.

[Problem that the invention seeks to solve]

The conventional method for forming a single metal wiring pattern consists of the steps described above, so when forming a long electrode metal wiring pattern with a line width of 3 μm or less and a length of 100 μm or more, the first In addition to the weak adhesion between the interlayer insulation film (2) and the metal film for electrode wiring (3), the second The electrode metal wiring pattern (3a) may shift from the predetermined position due to stress applied from the insulation ill (61) to the electrode metal wiring pattern (3a), and in the worst case, it may cause a disconnection and affect the operation of the semiconductor device. This had the drawback of reducing reliability.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a method for forming an electrode metal wiring pattern that can prevent displacement and disconnection of the electrode metal wiring pattern.

[Means for solving problems]

The method for forming an electrode metal wiring pattern according to the present invention includes forming a recess in advance in a part of the first interlayer insulating film corresponding to the electrode metal wiring pattern, and then forming an electrode metal wiring pattern on the recess. It is designed to form a .

[For production]

The recess in this invention prevents displacement and disconnection of the electrode metal wiring pattern by fitting a part of the electrode metal wiring pattern.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
Figures A to L are a sectional view and a plan view showing each state in the main steps of an embodiment of the present invention.

In the method of forming the electrode metal wiring pattern of this embodiment, first, as shown in FIG. The first interlayer insulating film (2) is formed by, for example, chemical vapor deposition or sputtering. After this, as shown in FIG. 1B, the first interlayer insulating film (2)
) is coated with a first photosensitive resin film (7), e.g. a negative photosensitive resin film (which is removed in a subsequent development process except for the exposed areas), as shown in Figure 1C. As shown in FIG. The photosensitive resin film (7) is removed to form an opening (9) in the photosensitive resin film (7) as shown in the first diagram.Subsequently, the pattern of this photosensitive resin film (7) is Using an etching method that utilizes chemical or physical effects as a mask, a recess (lO) is formed in the portion of the first interlayer insulating film (2) exposed in the opening (9), as shown in FIG. 1E. form.

Thereafter, when the photosensitive resin film (7) is removed, a first interlayer insulating film (2) having a recess (10) as shown in FIG.
) is obtained.

Here, it is assumed that the pattern drawn on the first mask plate (8) is part of the electrode wiring pattern drawn on the second mask plate (18) to be used later. Further, the depth of the recess (10) is desirably about 2 times or less the thickness of the electrode wiring metal film (1)) to be formed later, in order to prevent wire breakage at this portion.

After forming the recess (10), as shown in FIG.
After forming an electrode wiring metal film (1) made of, for example, an aluminum film on the first interlayer insulation II9 [21 containing 10) using, for example, a sputtering method, the electrode wiring metal film (1)) made of, for example, an aluminum film is formed. A second photosensitive resin film (12) is applied. Thereafter, when the process is performed in the order of FIG. 1 H to J using the same method as the conventional electrode metal wiring pattern forming method, the cross section of the recess (10) from 1 to FIG. 1 K is formed. An electrode metal wiring pattern (lla) is formed.

Note that the symbol (12a) indicates a photosensitive resin film pattern.

An example of a plan view showing the positional relationship between the recess (10) and the electrode metal wiring pattern (lla) is shown in FIG. 15. FIG. 1 shows a cross-sectional view taken along line AA' in the figure.

In addition, in the above embodiment, one electrode metal wiring pattern (l
Although a case is shown in which one recess (10) is formed within la), a plurality of recesses may be formed within one electrode metal wiring pattern.

Furthermore, in the above embodiment, an aluminum film was used as the metal film (1) for electrode wiring, but not only aluminum, but any material that can be used as a metal film for electrode wiring can be used. Al5iCu, AlCu
It may also be an alloy film such as.

Furthermore, the interlayer insulating film is not limited to one layer, but may be two or more layers.

Further, the shape of the recess (lO) is not limited to a square, but may be any shape.

〔Effect of the invention〕

As described above, according to the present invention, after forming a recess in a part of the interlayer insulation crotch where the electrode metal wiring pattern is to be formed, the electrode metal wiring pattern is formed thereon. Even with a long wiring pattern of 100 μm or more, it is possible to prevent pattern displacement or disconnection in subsequent steps, and it is possible to improve the reliability of the operation of the semiconductor device.

[Brief explanation of drawings]

1A-L are cross-sectional views and plan views showing each state in the main steps of a method for forming an electrode metal wiring pattern according to an embodiment of the present invention, and FIGS. 2A-G are conventional methods for forming an electrode metal wiring pattern. FIG. 3 is a cross-sectional view showing each state in the main steps of the method. +1) is the lower substrate, (2) is the interlayer insulating film, (10) is the recess, (1)) is the metal film for electrode wiring, and (lla) is the electrode metal wiring pattern. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.

Claims (2)

[Claims] (1) In a method for forming an electrode metal wiring pattern in which a desired electrode metal wiring pattern is formed on a lower substrate via an interlayer insulating film, selective etching is performed on the interlayer insulating film from its upper surface to form a desired electrode metal wiring pattern on the interlayer insulating film. A first step of forming a recess in a portion corresponding to the recess, and a second step of forming a metal film for electrode wiring on the interlayer insulating film including the recess.
and a third step of etching away the other portions of the metal film, leaving the electrode metal wiring pattern including the recessed portions.
A method for forming an electrode metal wiring pattern, comprising the steps of: (2) The method for forming an electrode metal wiring pattern according to claim 1, wherein the width of the smaller recessed portion is narrower than the width of the electrode metal wiring pattern.