KR910013471A - Manufacturing method of electrode pad of Hall device - Google Patents

Manufacturing method of electrode pad of Hall device Download PDF

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Publication number
KR910013471A
KR910013471A KR1019890020233A KR890020233A KR910013471A KR 910013471 A KR910013471 A KR 910013471A KR 1019890020233 A KR1019890020233 A KR 1019890020233A KR 890020233 A KR890020233 A KR 890020233A KR 910013471 A KR910013471 A KR 910013471A
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KR
South Korea
Prior art keywords
electrode pad
thin film
manufacturing
hall device
deposited
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Application number
KR1019890020233A
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Korean (ko)
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KR930011024B1 (en
Inventor
송이헌
고용태
Original Assignee
서주인
삼성전기 주식회사
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Priority to KR1019890020233A priority Critical patent/KR930011024B1/en
Publication of KR910013471A publication Critical patent/KR910013471A/en
Application granted granted Critical
Publication of KR930011024B1 publication Critical patent/KR930011024B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)

Abstract

내용 없음.No content.

Description

Hall 소자의 전극패드 제조방법Manufacturing method of electrode pad of Hall device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 따른 Hall소자의 전체 평면도,1 is an overall plan view of a Hall device according to the present invention,

제2도는 본 발명에 따른 전극패드순으로, (가)는 InSb 박막 상에 Al 적층막과 포토레지스트(Photo resist)를 도포한 상태의 단면도, (나)는 조광 후 형성된 단면도, (다)는 Al 적층막을 에칭(Etching)한 후의 단면도,(라)는 포토레지스트 제거 후 완성된 전극 패드.2 is an electrode pad according to the present invention, (A) is a cross-sectional view of the Al laminate film and photoresist applied on the InSb thin film, (B) is a cross-sectional view formed after dimming, (C) is A cross-sectional view after etching an Al laminate film, (d) is an electrode pad completed after removing the photoresist.

Claims (3)

Insb 박막을 사용하는 Hall 소자(1)의 전극 패드를 제조함에 있어서, 기판(2)상에 절연막(3)을 피막하고 증착된 InSb 박막(4)상에 전극 패드를 Al 박막(5)만으로 적층하고, 상기 Al 박막(5) 위에 네가티브 타입(negative type)의 포토레지스트(Photoresist)(6)를 도포한 후에 에칭(Etching)한 것을 특징으로 하는 Hall 소자의 전극패드 제조방법.In manufacturing the electrode pad of the Hall element 1 using the Insb thin film, the insulating film 3 is coated on the substrate 2 and the electrode pad is laminated only on the deposited InSb thin film 4 with the Al thin film 5 only. And applying a negative type photoresist (6) onto the Al thin film (5), followed by etching. 제1항에 있어서 증착되는 Al 박막(5)의 두께를 1.8∼5.0㎛를 형성한 것을 특징으로 하는 Hall 소자의 전극 패드 제조방법.The electrode pad manufacturing method of a Hall element according to claim 1, wherein the Al thin film (5) to be deposited has a thickness of 1.8 to 5.0 mu m. 제1항에 있어서, Al박막(5) 에칭을 20% NaOH수용액을 상온에서 사용한 것을 특징으로 하는 Hall소자 전극 패드 제조방법.The Hall device electrode pad manufacturing method according to claim 1, wherein the Al thin film (5) is etched using a 20% aqueous NaOH solution at room temperature. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890020233A 1989-12-29 1989-12-29 Manufacturing method of electrode pad for hall effect device KR930011024B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890020233A KR930011024B1 (en) 1989-12-29 1989-12-29 Manufacturing method of electrode pad for hall effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890020233A KR930011024B1 (en) 1989-12-29 1989-12-29 Manufacturing method of electrode pad for hall effect device

Publications (2)

Publication Number Publication Date
KR910013471A true KR910013471A (en) 1991-08-08
KR930011024B1 KR930011024B1 (en) 1993-11-19

Family

ID=19294281

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890020233A KR930011024B1 (en) 1989-12-29 1989-12-29 Manufacturing method of electrode pad for hall effect device

Country Status (1)

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KR (1) KR930011024B1 (en)

Also Published As

Publication number Publication date
KR930011024B1 (en) 1993-11-19

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