KR900002484A - Method for manufacturing electrode pad of Hall device - Google Patents

Method for manufacturing electrode pad of Hall device Download PDF

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Publication number
KR900002484A
KR900002484A KR1019880009420A KR880009420A KR900002484A KR 900002484 A KR900002484 A KR 900002484A KR 1019880009420 A KR1019880009420 A KR 1019880009420A KR 880009420 A KR880009420 A KR 880009420A KR 900002484 A KR900002484 A KR 900002484A
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KR
South Korea
Prior art keywords
thin film
electrode pad
hall device
manufacturing
thickness
Prior art date
Application number
KR1019880009420A
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Korean (ko)
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KR920006202B1 (en
Inventor
송이언
Original Assignee
서주인
삼성전기 주식회사
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Publication date
Application filed by 서주인, 삼성전기 주식회사 filed Critical 서주인
Priority to KR1019880009420A priority Critical patent/KR920006202B1/en
Publication of KR900002484A publication Critical patent/KR900002484A/en
Application granted granted Critical
Publication of KR920006202B1 publication Critical patent/KR920006202B1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Hall/Mr Elements (AREA)

Abstract

내용 없음.No content.

Description

Hall소자의 전극패드 제조방법Method for manufacturing electrode pad of Hall device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 Hall소자의 전체 사시도.1 is an overall perspective view of a Hall device according to the present invention.

제2도는 본 발명에 따른 Hall소자의 A-A'선 단면도.2 is a cross-sectional view taken along the line A-A 'of the Hall device according to the present invention.

제3도는 본 발명에 따른 전극패드 제조순으로 (a)는 InSb박막상에 Al-Au적측막을 형성한 후의 단면도, (b)는 Al-Au적층막상에 포토레지스트를 도포한 상태의 단면도, (c)는 Au적층막을 에칭한후의 단면도.3 is an electrode pad manufacturing procedure according to the present invention (a) is a cross-sectional view after forming the Al-Au red film on the InSb thin film, (b) is a cross-sectional view of the photoresist applied on the Al-Au laminated film, ( c) is sectional drawing after etching an Au laminated film.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : Hall소자 2 : 기판1: Hall element 2: Substrate

3 : 절연막 4 : InSb박막3: insulating film 4: InSb thin film

5 : Al박막 6 : Au박막5: Al thin film 6: Au thin film

7 : 포토레지스트7: photoresist

Claims (5)

InSb박막을 사용하는 Hall소자의 전극패드를 제조함에 있어서, 기판에 증착된 InSb박막상에 Al박막과 Au 박막에 두께비를 5:1로 하여 적층하고 상기 적층막위에 포토레지스트를 도포한 후 각각 다른 부식제를이용하여 Al박막과 Au박막을 순차적으로 에칭하는 것을 특징으로 하는 Hall소자의 전극패드 제조방법.In manufacturing an electrode pad of a Hall device using an InSb thin film, an Al thin film and an Au thin film were laminated on an InSb thin film deposited on a substrate with a thickness ratio of 5: 1, and a photoresist was applied on the laminated film. A method of manufacturing an electrode pad of a Hall device, comprising etching sequentially an Al thin film and an Au thin film using a caustic agent. 제1항에 있어서 증착되는 Al박막의 두께와 Au박막의 두께는 각각 1.5μm와 0.3μm인 것을 특징으로 하는 Hall소자의 전극패드 제조방법.The method according to claim 1, wherein the thickness of the Al thin film and the thickness of the Au thin film are 1.5 μm and 0.3 μm, respectively. 제1항에 있어서, 적층막에 도포되는 포토레지스터의 두께는 2.5μm인 것을 특징으로 하는 Hall소자의 전극패드 제조방법.The method of claim 1, wherein the thickness of the photoresist applied to the laminated film is 2.5 μm. 제1항에 있어서 Au박막의 에칭에 쓰이는 부식체는 KI : I2: H2O=4 : 1 : 40인 혼합액이고 Al박막의 에칭에 쓰이는 부식체는 20% NaOH수용액인 것을 특징으로 하는 Hall소자의 전극패드 제조방법.The Hall according to claim 1, wherein the corrosive used for etching the Au thin film is a mixed solution of KI: I 2 : H 2 O = 4: 1: 40 and the corrosive used for etching the Al thin film is a 20% NaOH aqueous solution. Method for manufacturing an electrode pad of the device. 제1항에 있어서 Al박막과 Au박막의 두께의 합은 InSb박막의 두께보다 크게 구성되는 것을 특징으로하는 Hall소자의 전극패드 제조방법.The method of claim 1, wherein the sum of the thicknesses of the Al thin film and the Au thin film is larger than that of the InSb thin film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880009420A 1988-07-26 1988-07-26 Method of manufacturing electrode rad of hall element KR920006202B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880009420A KR920006202B1 (en) 1988-07-26 1988-07-26 Method of manufacturing electrode rad of hall element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880009420A KR920006202B1 (en) 1988-07-26 1988-07-26 Method of manufacturing electrode rad of hall element

Publications (2)

Publication Number Publication Date
KR900002484A true KR900002484A (en) 1990-02-28
KR920006202B1 KR920006202B1 (en) 1992-08-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880009420A KR920006202B1 (en) 1988-07-26 1988-07-26 Method of manufacturing electrode rad of hall element

Country Status (1)

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KR (1) KR920006202B1 (en)

Also Published As

Publication number Publication date
KR920006202B1 (en) 1992-08-01

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