KR950012764A - Method of manufacturing thin film transistor - Google Patents
Method of manufacturing thin film transistor Download PDFInfo
- Publication number
- KR950012764A KR950012764A KR1019930022653A KR930022653A KR950012764A KR 950012764 A KR950012764 A KR 950012764A KR 1019930022653 A KR1019930022653 A KR 1019930022653A KR 930022653 A KR930022653 A KR 930022653A KR 950012764 A KR950012764 A KR 950012764A
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- source
- forming
- thin film
- film transistor
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- Thin Film Transistor (AREA)
Abstract
본 발명은 박막트랜지스터에 관한 것으로, 종래의 박막트랜지스터는, 상기 소오스/드레인전극의 모서리에 발생하는 자계의 집중현상으로 인해 박막트랜지스터의 안정성이 떨어지는 문제가 있었다.The present invention relates to a thin film transistor, the conventional thin film transistor has a problem that the stability of the thin film transistor is poor due to the concentration of the magnetic field generated at the corner of the source / drain electrode.
본 발명은 이러한 문제점을 해결하기 위하여 소오스/드레인전극과 반도체층 사이에 절연막을 형성하여 소오스/드레인전극의 모서리가 반도체층과 직접 접촉하지 않게 함으로써 자계의 집중현상을 제거하거나 상기 형성하여 자계의 집중현상을 제거하며 박막트랜지 소오스/드레인전극의 모서리를 테이퍼 에칭하여 테이퍼로스터의 동작안정성을 높일 수 있도록 한 박막트랜지스터 제조방법을 창안한 것이다.In order to solve the problem, the present invention forms an insulating film between the source / drain electrodes and the semiconductor layer so that the edges of the source / drain electrodes do not come into direct contact with the semiconductor layer, thereby eliminating or concentrating the magnetic field. The present invention devised a method for manufacturing a thin film transistor which eliminates the phenomenon and increases the operational stability of the tapered roaster by tapering etching edges of the thin film transistor source / drain electrodes.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도의 (가) 내지 (라)는 본 발명 박막트랜지스터의 제조공정도.Figure 3 (a) to (d) is a manufacturing process diagram of the thin film transistor of the present invention.
제4도는 제3도의 있어서, 드레인측부분단면도.4 is a drain side partial sectional view of FIG.
제5도는 제4에 대한 다른 실시예도.5 is another embodiment of the fourth embodiment.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930022653A KR950012764A (en) | 1993-10-28 | 1993-10-28 | Method of manufacturing thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930022653A KR950012764A (en) | 1993-10-28 | 1993-10-28 | Method of manufacturing thin film transistor |
Publications (1)
Publication Number | Publication Date |
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KR950012764A true KR950012764A (en) | 1995-05-16 |
Family
ID=66824817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019930022653A KR950012764A (en) | 1993-10-28 | 1993-10-28 | Method of manufacturing thin film transistor |
Country Status (1)
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KR (1) | KR950012764A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000012388A (en) * | 1999-12-02 | 2000-03-06 | 김제구 | Non-viscid powder paint easy to clean |
-
1993
- 1993-10-28 KR KR1019930022653A patent/KR950012764A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000012388A (en) * | 1999-12-02 | 2000-03-06 | 김제구 | Non-viscid powder paint easy to clean |
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