KR930010774B1 - 방사선감수성 조성물, 이를 사용하여 제조한 기록물질, 및 내열성 기록 양각 상의 제조방법 - Google Patents

방사선감수성 조성물, 이를 사용하여 제조한 기록물질, 및 내열성 기록 양각 상의 제조방법 Download PDF

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Publication number
KR930010774B1
KR930010774B1 KR1019850008740A KR850008740A KR930010774B1 KR 930010774 B1 KR930010774 B1 KR 930010774B1 KR 1019850008740 A KR1019850008740 A KR 1019850008740A KR 850008740 A KR850008740 A KR 850008740A KR 930010774 B1 KR930010774 B1 KR 930010774B1
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KR
South Korea
Prior art keywords
group
acid
unit
radiosensitive
compound
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Expired - Fee Related
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KR1019850008740A
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English (en)
Korean (ko)
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KR860004334A (ko
Inventor
쉬넬러 아놀트
가이쓸러 울리히
Original Assignee
훽스트 아크티엔게젤샤프트
빌리 베틀라우퍼, 쿠르트 오일러
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Publication of KR860004334A publication Critical patent/KR860004334A/ko
Application granted granted Critical
Publication of KR930010774B1 publication Critical patent/KR930010774B1/ko
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Materials For Photolithography (AREA)
KR1019850008740A 1984-11-23 1985-11-22 방사선감수성 조성물, 이를 사용하여 제조한 기록물질, 및 내열성 기록 양각 상의 제조방법 Expired - Fee Related KR930010774B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19843442756 DE3442756A1 (de) 1984-11-23 1984-11-23 Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen
DEP3442756.2 1984-11-23

Publications (2)

Publication Number Publication Date
KR860004334A KR860004334A (ko) 1986-06-20
KR930010774B1 true KR930010774B1 (ko) 1993-11-10

Family

ID=6250989

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008740A Expired - Fee Related KR930010774B1 (ko) 1984-11-23 1985-11-22 방사선감수성 조성물, 이를 사용하여 제조한 기록물질, 및 내열성 기록 양각 상의 제조방법

Country Status (6)

Country Link
US (1) US4699867A (https=)
EP (1) EP0184044B1 (https=)
JP (1) JPS61143747A (https=)
KR (1) KR930010774B1 (https=)
AT (1) ATE71747T1 (https=)
DE (2) DE3442756A1 (https=)

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DE3528929A1 (de) * 1985-08-13 1987-02-26 Hoechst Ag Strahlungsempfindliches gemisch, dieses enthaltendes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefbildern
EP0265387B1 (en) * 1986-10-23 1995-11-15 Ciba-Geigy Ag Method of forming images
DE3787369T2 (de) * 1986-11-26 1994-01-13 Konishiroku Photo Ind Farbbilddarstellungsmaterial und verfahren zur herstellung gefärbter bilder.
JPH06105355B2 (ja) * 1986-12-15 1994-12-21 富士写真フイルム株式会社 感光性組成物
JPS63303343A (ja) * 1987-06-03 1988-12-09 Konica Corp 感光性組成物及び感光性平版印刷版
DE3852559T2 (de) * 1987-03-12 1995-05-24 Konishiroku Photo Ind Lichtempfindliche positive Flachdruckplatte.
DE3711264A1 (de) * 1987-04-03 1988-10-13 Hoechst Ag Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial
DE3716848A1 (de) * 1987-05-20 1988-12-01 Hoechst Ag Verfahren zur bebilderung lichtempfindlichen materials
US5081001A (en) * 1987-05-22 1992-01-14 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4962171A (en) * 1987-05-22 1990-10-09 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US4810613A (en) * 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
US5177172A (en) * 1988-05-31 1993-01-05 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions
US5002851A (en) * 1988-05-31 1991-03-26 Olin Hunt Specialty Products, Inc. Light sensitive composition with o-quinone diazide and phenolic novolak resin made using methylol substituted trihydroxybenzophenone as reactant
US5239122A (en) * 1988-05-31 1993-08-24 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions
US5254440A (en) * 1988-05-31 1993-10-19 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions and processes of forming resist images
DE3820699A1 (de) * 1988-06-18 1989-12-21 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3907953A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DE3907954A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DE4002397A1 (de) * 1990-01-27 1991-08-01 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4003025A1 (de) * 1990-02-02 1991-08-08 Hoechst Ag Strahlungsempfindliches gemisch, hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefaufzeichnungen
US5403695A (en) * 1991-04-30 1995-04-04 Kabushiki Kaisha Toshiba Resist for forming patterns comprising an acid generating compound and a polymer having acid decomposable groups
KR950002875B1 (ko) * 1991-07-08 1995-03-27 가부시키가이샤 도시바 감광성 조성물
DE19507618A1 (de) * 1995-03-04 1996-09-05 Hoechst Ag Polymere und diese enthaltendes lichtempfindliches Gemisch
DE19803564A1 (de) 1998-01-30 1999-08-05 Agfa Gevaert Ag Polymere mit Einheiten aus N-substituiertem Maleimid und deren Verwendung in strahlungsempfindlichen Gemischen
JP4213366B2 (ja) 2001-06-12 2009-01-21 Ａｚエレクトロニックマテリアルズ株式会社 厚膜レジストパターンの形成方法
DE10204114A1 (de) * 2002-02-01 2003-08-14 Basf Coatings Ag Thermisch und mit aktinischer Strahlung härtbares Stoffgemisch, Verfahren zu seiner Herstellung und seine Verwendung
US20080305435A1 (en) * 2007-06-05 2008-12-11 Yasushi Miyamoto Method of making lithographic printing plate substrate and imageable elements
JP5417422B2 (ja) * 2010-12-13 2014-02-12 富士フイルム株式会社 ポジ型感光性樹脂組成物
CN102540726B (zh) * 2010-12-13 2016-07-06 富士胶片株式会社 正型感光性树脂组成物、硬化膜及其形成方法、层间绝缘膜以及显示装置
JP5593405B2 (ja) * 2012-02-28 2014-09-24 富士フイルム株式会社 感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機ｅｌ表示装置および液晶表示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1447913C3 (de) * 1964-10-15 1979-08-09 Hoechst Ag, 6000 Frankfurt Verfahren zur Herstellung von Druckformen
US3637384A (en) * 1969-02-17 1972-01-25 Gaf Corp Positive-working diazo-oxide terpolymer photoresists
US3900325A (en) * 1972-06-12 1975-08-19 Shipley Co Light sensitive quinone diazide composition with n-3-oxohydrocarbon substituted acrylamide
US4164421A (en) * 1972-12-09 1979-08-14 Fuji Photo Film Co., Ltd. Photocurable composition containing an o-quinonodiazide for printing plate
DE3039926A1 (de) * 1980-10-23 1982-05-27 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
DE3231147A1 (de) * 1982-08-21 1984-02-23 Basf Ag, 6700 Ludwigshafen Positiv arbeitendes verfahren zur herstellung von reliefbildern oder resistmustern
DE3323343A1 (de) * 1983-06-29 1985-01-10 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
DE3325022A1 (de) * 1983-07-11 1985-01-24 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung negativer kopien mittels eines materials auf basis von 1,2-chinondiaziden
DE3329443A1 (de) * 1983-08-16 1985-03-07 Hoechst Ag, 6230 Frankfurt Durch strahlung polymerisierbares gemisch und daraus hergestelltes kopiermaterial
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen

Also Published As

Publication number Publication date
US4699867A (en) 1987-10-13
DE3442756A1 (de) 1986-05-28
EP0184044B1 (de) 1992-01-15
DE3585213D1 (de) 1992-02-27
KR860004334A (ko) 1986-06-20
JPH0588834B2 (https=) 1993-12-24
JPS61143747A (ja) 1986-07-01
EP0184044A3 (en) 1988-01-13
ATE71747T1 (de) 1992-02-15
EP0184044A2 (de) 1986-06-11

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